Device for measuring and/or modifying a surface
US-2024118310-A1 · Apr 11, 2024 · US
US11054440B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-11054440-B2 |
| Application number | US-202016834326-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 30, 2020 |
| Priority date | Mar 28, 2019 |
| Publication date | Jul 6, 2021 |
| Grant date | Jul 6, 2021 |
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A method for generating a high-intensity light source at a probe tip, the method includes exciting a TM 0 mode of a surface plasmon polariton (SPP) in a sharp-tip metal nanowire (AgNW) waveguide with a linearly-polarized mode (LP 01 ) in a tapered optical fiber (OF); and compressing the TM 0 mode through a chemically-sharpened taper to a tip apex of the sharp-tip silver nanowire (AgNW).
Opening claim text (preview).
What is claimed is: 1. A method for generating a high-intensity light source at a probe tip, the method comprising: exciting a TM 0 mode of a surface plasmon polariton (SPP) in a sharp-tip metal nanowire (AgNW) waveguide with a linearly-polarized mode (LP 01 ) in a tapered optical fiber (OF); and compressing the TM 0 mode through a chemically-sharpened taper to a tip apex of the sharp-tip silver nanowire (AgNW). 2. The method according to claim 1 , further comprising: selectively exciting the TM 0 mode by physically separating coupling regions for the TM 0 mode and a HE 1 mode. 3. The method according to claim 2 , wherein the TM 0 mode has a higher effective mode index than other SPP modes, and incident light in the tapered optical fiber runs into a phase-matching region for the TM 0 mode first, and uncoupled light remaining in the tapered optical fiber propagates into a phase-matching region for the HE 1 mode. 4. The method according to claim 1 , wherein an angle of the tapered optical fiber is 6° to 12°. 5. The method according to claim 1 , wherein the sharp-tip nanowire protrudes 1 μm to 2 μm from a tip of the tapered optical fiber and the sharp-tip silver nanowire has a tip angle of 30° to 50°. 6. The method according to claim 1 , further comprising: removing low-k components by inserting a k-space filter into an optical path; focusing high-k information with an objective lens to form a ring pattern at an image plane; and sending the focused high-k information into a charge-coupled device (CCD) of a spectrometer for analysis. 7. A probe comprising: a tapered optical fiber (OF) configured to excite a TM 0 mode of a surface plasmon polariton (SPP); a sharp-tip metal nanowire waveguide arranged on a sidewall of the tapered optical fiber; and wherein a taper to a tip apex of the sharp-tip nanowire is configured to compress the TM 0 mode. 8. The probe of claim 7 , wherein the sharp-tip metal nanowire is a silver nanowire. 9. The probe of claim 7 , wherein the taper to the tip apex of the sharp-tip nanowire is chemically-sharpened. 10. The probe of claim 7 , wherein the TM 0 mode is selectively excited by physically separating coupling regions for the TM 0 mode and a HE 1 mode. 11. The probe of claim 10 , wherein the TM 0 mode has a higher effective mode index than other SPP modes, and incident light in the tapered optical fiber runs into a phase-matching region for the TM 0 mode first, and uncoupled light remaining in the tapered optical fiber propagates into a phase-matching region for the HE 1 mode. 12. The probe of claim 7 , wherein an angle of the tapered optical fiber is 7° to 12°. 13. The probe of claim 7 , wherein the sharp-tip metal nanowire protrudes 1 μm to 2 μm from a tip of the tapered optical fiber and the sharp-tip silver nanowire has a tip angle of 30° to 50°. 14. The probe of claim 7 , wherein the sharp-tip silver nanowire has a diameter of 100 nm to 300 nm, and an excitation wavelength is 532 nm. 15. The probe of claim 7 , wherein the tapered optical fiber includes a gold electrode partially covering the optical fiber for electrically connecting the metal nanowire for imaging. 16. The probe of claim 7 , wherein the probe is used Raman spectroscopy imaging, photocurrent imaging, UV-VIS imaging, scanning probe microscopes, atomic force microscopes and/or scanning tunneling microscopes. 17. The probe of claim 7 , wherein probe is integrated into an electron microscope for in-situ optical measurement. 18. The probe of claim 7 , further comprising: a k-space filter, wherein the k-space filter is inserted into an optical path to remove low-k components; and an objective lens, the objective lens configured to focus high-k information to form a ring pattern at an image plane, which is sent into a charge-coupled device (CCD) of a spectrometer for analysis. 19. The probe of claim 18 , wherein the probe is used for microscopy using linear wavelengths.
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