Method for processing a monocrystalline substrate and micromechanical structure

Patent metadata

Field	Value
Publication number	US-11046577-B2
Application number	US-202016794306-A
Country	US
Kind code	B2
Filing date	Feb 19, 2020
Priority date	Sep 27, 2016
Publication date	Jun 29, 2021
Grant date	Jun 29, 2021

Abstract

In various embodiments, a method of processing a monocrystalline substrate is provided. The method may include severing the substrate along a main processing side into at least two monocrystalline substrate segments, and forming a micromechanical structure comprising at least one monocrystalline substrate segment of the at least two substrate segments.

First claim

What is claimed is:

1. A micromechanical structure, comprising:
a substrate comprising a cavity;
a monocrystalline semiconductor layer comprising a first section and a second section;
wherein the second section adjoins the cavity and is coupled to the substrate by means of the first section;
further comprising a functional structure comprising a functional region, which is deflectable relative to the substrate as a reaction to a force acting thereon;
wherein the second section comprises the functional region.

2. The micromechanical structure of claim 1 , further comprising:
an electrode arranged at the substrate; and
a functional structure comprising a functional region, which is deflectable relative to the electrode as a reaction to a force acting thereon;
wherein the electrode comprises the second section.

3. The micromechanical structure of claim 1 , further comprising:
wherein the second section may include at least one of the following:
silicon carbide;
gallium nitride;
a greater modulus of elasticity than the substrate; and
a greater mechanical hardness than the substrate.

4. The micromechanical structure of claim 1 , further comprising:
an additional semiconductor layer, which differs from the monocrystalline semiconductor layer in its modulus of elasticity and/or in its mechanical hardness;
wherein the cavity is arranged between the monocrystalline semiconductor layer and the additional semiconductor layer.

5. An electromechanical transducer, comprising:
a substrate;
a microelectromechanical structure in double electrode configuration;
wherein the microelectromechanical structure comprises at least one freely suspended section, wherein the at least one freely suspended section comprises at least one of silicon carbide, gallium nitride or has a greater modulus of elasticity than the substrate.

6. The electromechanical transducer of claim 5 , further comprising:
two electrodes, of which at least one electrode comprises the at least one freely suspended section.

7. The electromechanical transducer of claim 5 ,
wherein the microelectromechanical structure comprises at least one functional region, which is deflectable relative to the substrate as a reaction to a force acting thereon;
wherein the at least one freely suspended section comprises the functional region.

8. The electromechanical transducer of claim 5 ,
wherein the at least one freely suspended section comprises at least one of monocrystalline silicon carbide or monocrystalline gallium nitride.

Assignees

• Infineon Technologies Ag

Inventors

• Brockmeier Andre
• Rupp Roland
• Santos Rodriguez Francisco Javier

Classifications

• B81C1/00357 Primary

  involving bonding one or several substrates on a non-temporary support, e.g. another substrate · CPC title

• B81C1/00349

  Creating layers of material on a substrate · CPC title

• B81B3/0027

  Structures for transforming mechanical energy, e.g. potential energy of a spring into translation, sound into translation · CPC title

• B81C1/0015 Primary

  Cantilevers (switches using MEMS H01H1/0036; electrostatic relays using micromechanics H01H59/0009; microelectro-mechanical resonators H03H9/02244) · CPC title

• B81B3/0097

  Devices comprising flexible or deformable elements not provided for in groups B81B3/0002 - B81B3/0094 · CPC title