Signal processing for mems capacitive transducers
US-2016157017-A1 · Jun 2, 2016 · US
Device comprising a spring and an element suspended thereon, and method for manufacturing same
US9399573B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9399573-B2 |
| Application number | US-201414280154-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 16, 2014 |
| Priority date | May 17, 2013 |
| Publication date | Jul 26, 2016 |
| Grant date | Jul 26, 2016 |
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Abstract
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The invention relates to an MEMS structure with a stack made of different layers and a spring-and-mass system varying in its thickness which is formed of the stack, and wherein, starting from a back side of the stack and the substrate, at laterally different positions, the substrate while leaving the first semiconductor layer, or the substrate, the first etch-stop layer and the first semiconductor layer are removed, and to a method for manufacturing such a structure.
First claim
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The invention claimed is: 1. A method for manufacturing an MEMS structure with a stack of material thicknesses, comprising: providing a stack of a substrate, a first etch-stop layer, a first semiconductor layer, a second etch-stop layer and a second semiconductor layer which are arranged one above the other in the order mentioned; implementing a spring-and-mass system formed in the stack and varying in its thickness, comprising at least one spring and an element suspended via th…
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Operations & Transport · mapped topic
Operations & Transport · mapped topic
Operations & Transport · mapped topic
Operations & Transport · mapped topic
- B81B3/0027Primary
Operations & Transport · mapped topic
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- What does patent US9399573B2 cover?
- The invention relates to an MEMS structure with a stack made of different layers and a spring-and-mass system varying in its thickness which is formed of the stack, and wherein, starting from a back side of the stack and the substrate, at laterally different positions, the substrate while leaving the first semiconductor layer, or the substrate, the first etch-stop layer and the first semiconduc…
- Who is the assignee on this patent?
- Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E V
- What technology area does this patent fall under?
- Primary CPC classification B81B3/0027. Mapped technology areas include Operations & Transport.
- When was this patent published?
- Publication date Tue Jul 26 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).