In-situ plasma cleaning of process chamber components

Patent metadata

Field	Value
Publication number	US-11037758-B2
Application number	US-201916724944-A
Country	US
Kind code	B2
Filing date	Dec 23, 2019
Priority date	Jun 12, 2015
Publication date	Jun 15, 2021
Grant date	Jun 15, 2021

Abstract

Provided herein are approaches for in-situ plasma cleaning of ion beam optics. In one approach, a system includes a component (e.g., a beam-line component) of an ion implanter processing chamber. The system further includes a power supply for supplying a first voltage and first current to the component during a processing mode and a second voltage and second current to the component during a cleaning mode. The second voltage and current are applied to one or more conductive beam optics of the component, individually, to selectively generate plasma around one or more of the one or more conductive beam optics. The system may further include a flow controller for adjusting an injection rate of an etchant gas supplied to the beam-line component, and a vacuum pump for adjusting pressure of an environment of the beam-line component.

First claim

What is claimed is:

1. A method, comprising:
providing an electrode grid and a plurality of conductive beam optics within an electrostatic filter, wherein the electrode grid is disposed above and below an ion beamline, between the plurality of conductive beam optics and a housing of the electrostatic filter;
supplying, from a power supply, a first voltage and a first current to the plurality of conductive beam optics during a processing mode; and
supplying a second voltage and a second current to the electrode grid during a cleaning mode to generate a plasma around one or more of the conductive beam optics, wherein the electrode grid is grounded during the processing mode and supplied the second voltage during the cleaning mode, and wherein the plurality of conductive beam optics is at zero volts during the cleaning mode.

2. The method of claim 1 , further comprising supplying an etchant gas to the electrostatic filter to enable cleaning of the plurality of conductive beam optics.

3. The method of claim 2 , further comprising adjusting an injection rate of the etchant gas using a flow controller.

4. The method of claim 1 , further comprising arranging electrode grid parallel to the ion beamline.

5. The method of claim 1 , further comprising adjusting a pressure of the chamber using a vacuum pump.

6. The method of claim 1 , further comprising supplying the second voltage and the second current from one of the following: a direct current (DC) power supply, and a radio frequency (RF) power supply.

7. The method of claim 6 , further comprising switching from the processing mode to the cleaning mode, wherein the first voltage and the first current are supplied by the DC power supply.

8. The method of claim 1 , further comprising etching, during the cleaning mode, a deposit formed on one or more of the conductive beam optics.

9. A method comprising:
providing an electrode grid and a plurality of conductive beam optics within a chamber of an electrostatic filter, wherein the electrode grid extends parallel to, and is disposed above and below, an ion beamline;
supplying, from a power supply, a first voltage and a first current to the plurality of conductive beam optics during a processing mode;
supplying a second voltage and a second current to the electrode grid during a cleaning mode to generate a plasma around one or more of the conductive beam optics, wherein the electrode grid is grounded during the processing mode, and wherein the plurality of conductive beam optics is at zero volts during the cleaning mode; and
etching, during the cleaning mode, a deposit formed on one or more of the conductive beam optics.

10. The method of claim 9 , further comprising adjusting an injection rate of the etchant gas using a flow controller.

11. The method of claim 9 , further comprising providing the electrode grid directly adjacent the plurality of conductive beam optics and a housing defining the chamber of an electrostatic filter.

12. The method of claim 9 , further comprising increasing a pressure of the chamber using a vacuum pump.

13. The method of claim 9 , further comprising supplying the second voltage and the second current from one of the following: a direct current (DC) power supply, and a radio frequency (RF) power supply.

14. The method according to claim 9 , further comprising automatically switching from the processing mode to the cleaning mode in the case a predetermined threshold of ion beam glitches is achieved.

15. A method comprising:
providing an electrode grid and a plurality of conductive beam optics within a chamber of an electrostatic filter, wherein the electrode grid extends parallel to, and is disposed above and below, an ion beamline passing through the plurality of conductive beam optics, and wherein the electrode grid is directly adjacent the conductive beam optics and a housing of the electrostatic filter;
supplying, from a power supply, a first voltage and a first current to the plurality of conductive beam optics during a processing mode; and
supplying a second voltage and a second current to the electrode grid during a cleaning mode to generate a plasma around one or more of the conductive beam optics, wherein the electrode grid is grounded during the processing mode, and wherein the plurality of conductive beam optics is at zero volts during the cleaning mode.

16. The method of claim 15 , further comprising etching, during the cleaning mode, a deposit formed on one or more of the conductive beam optics.

Assignees

• Varian Semiconductor Equipment Ass Inc

Inventors

• Anglin Kevin
• Lee William Davis
• Kurunczi Peter
• Downey Ryan
• Scheuer Jay T
• Likhanskii Alexandre
• Holber William M

Classifications

• H10P72/04

  Apparatus for manufacture or treatment · CPC title

• C02F1/325

  Irradiation devices or lamp constructions · CPC title

• H01J37/3171 Primary

  for ion implantation · CPC title

• H01J2237/022

  Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube · CPC title

• H01J37/3467

  Pulsed operation, e.g. HIPIMS · CPC title