Method of forming copper alloy sputtering targets with refined shape and microstructure

Patent metadata

Field	Value
Publication number	US-11035036-B2
Application number	US-201916247232-A
Country	US
Kind code	B2
Filing date	Jan 14, 2019
Priority date	Feb 1, 2018
Publication date	Jun 15, 2021
Grant date	Jun 15, 2021

Abstract

A method of forming a copper manganese sputtering target including subjecting a copper manganese billet to a first unidirectional forging step, heating the copper manganese billet to a temperature from about 650° C. to about 750° C., subjecting the copper manganese billet to a second unidirectional forging step, and heating the copper manganese billet to a temperature from about 500° C. to about 650° C. to form a copper alloy.

First claim

The following is claimed:

1. A method of forming a copper manganese sputtering target, the method comprising:
subjecting a copper manganese billet to a first unidirectional forging step such that, after forging, a total number of grains in the copper manganese billet is increased by at least a factor of 10, as compared to the total number of grains in the copper manganese billet prior to forging;
heating the copper manganese billet at a temperature from about 650° C. to about 750° C. for from about 1 hour to about 3 hours in a first heat treatment step;
subjecting the copper manganese billet to a second unidirectional forging step such that the height of the copper manganese billet is reduced by from about 40 percent to 95 percent; and
heating the copper manganese billet at a temperature from about 500° C. to about 650° C. for from about 4 hours to about 8 hours in a second heat treatment step.

2. The method of claim 1 , wherein manganese in the copper manganese billet is present at a weight percentage of at least about 0.010 wt. %.

3. The method of claim 1 , wherein the height of the copper manganese billet is reduced by from about 10 percent to about 33 percent during the first unidirectional forging step.

4. The method of claim 1 , wherein the height of the copper manganese billet is reduced by from about 15 percent to about 25 percent during the first unidirectional forging step.

5. The method of claim 1 , wherein the copper manganese billet is heated to a temperature from about 675° C. to about 700° C. for from about 1.5 hours to 2 hours during the first heat treatment step.

6. The method of claim 1 , wherein the total number of grains in the copper manganese billet is increased by a factor of at least 100 during the first heat treatment step.

7. The method of claim 1 , wherein the height of the copper manganese billet is reduced by from about 50 percent to about 70 percent during the second unidirectional forging step.

8. The method of claim 1 , wherein the shape of the copper manganese billet is substantially equiaxed after the second unidirectional forging step.

9. The method of claim 1 , wherein the copper manganese billet is heated to a temperature from about 550° C. to about 600° C. during the second heat treatment step.

10. The method of claim 1 , further comprising casting the copper manganese billet by subjecting a copper material to slow cooling.

11. The method of claim 1 , wherein the copper manganese billet has an average grain size of less than about 150 μm.

12. The method of claim 1 , wherein the copper manganese billet has an average grain size of less than about 80 μm.

13. A method of forming a copper alloy sputtering target, the method comprising:
subjecting a copper alloy billet to a first unidirectional forging step such that, after forging, a total number of grains in the copper alloy billet is increased by at least a factor of 10, as compared to the total number of grains in the copper alloy billet prior to forging;
heating the copper alloy billet after the first unidirectional forging step in a first heat treatment step at a temperature and for a time sufficient to achieve 100 percent recrystallization of the copper alloy billet;
subjecting the copper alloy billet to a second unidirectional forging step such that a height of the copper alloy billet is reduced by from about 40 percent to 95 percent;
heating the copper alloy billet after the second unidirectional forging step in a second heat treatment step at a temperature and for a time sufficient to achieve a substantially refined grain structure; and
forming the copper alloy billet into a copper alloy sputtering target.

14. The method of claim 13 , wherein the copper alloy billet includes copper as a primary component and manganese as a secondary component.

15. The method of claim 13 , wherein the first heat treatment step is conducted at a temperature and time such that the grains do not regrow.

16. The method of claim 13 , wherein the first heat treatment step is conducted at a temperature from about 650° C. to about 750° C. for from about 1 hour to about 3 hours.

17. The method of claim 13 , wherein the copper alloy billet has an R ratio of at least 500 after the second heat treatment step.

18. The method of claim 17 , wherein the R ratio is from about 100,000 to 100,000,000.

19. The method of claim 13 , further comprising processing the copper alloy billet with equal channel angular extrusion (ECAE) after the second heat treatment step.

Assignees

• Honeywell Int Inc

Inventors

• Ferrasse Stephane
• Alford Frank C
• Nolander Ira G
• Turner Erik L
• Underwood Patrick

Classifications

• B21C23/001

  to improve the material properties, e.g. lateral extrusion · CPC title

• B21J1/00

  Preparing metal stock {or similar ancillary operations prior, during or post forging, e.g. heating or cooling (pretreatment for rolling B21B1/02, B21B15/0035)} · CPC title

• C22F1/08

  of copper or alloys based thereon · CPC title

• C22C9/05

  with manganese as the next major constituent · CPC title

• B21J1/04

  Shaping in the rough solely by forging or pressing · CPC title