Superalloy target
US-11866805-B2 · Jan 9, 2024 · US
Mn-containing copper alloy sputtering target generating few particles
US9028658B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9028658-B2 |
| Application number | US-6387906-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 17, 2006 |
| Priority date | Aug 19, 2005 |
| Publication date | May 12, 2015 |
| Grant date | May 12, 2015 |
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Abstract
Official abstract text for this publication.
A Mn-containing copper alloy sputtering target is provided. The target generates a small number of particles and is used to form diffusion inhibiting films and seed films of interconnects of semiconductor devices simultaneously. The target is a Mn-containing copper alloy sputtering target that generates few particles, comprising a copper alloy containing 0.6 to 30 mass % of Mn with the balance consisting of copper and impurities, wherein the impurities are controlled to include a total of 40 ppm or less of metallic impurities, 10 ppm or less of oxygen, 5 ppm or less of nitrogen, 5 ppm or less of hydrogen, and 10 ppm or less of carbon.
First claim
Opening claim text (preview).
The invention claimed is: 1. A Mn-containing copper alloy sputtering target that generates few particles, comprising: a copper alloy substantially consisting of 0.6 to 30 mass % of Mn; and a balance being of copper and impurities, wherein the Mn-containing copper alloy includes copper having a purity of 99.999% or more and Mn having a purity of 99.9% or more, the impurities are controlled such that the content of metallic impurities including Fe, Ni, Cr, Si, Pb, Co, Mg and Z…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9028658B2 cover?
- A Mn-containing copper alloy sputtering target is provided. The target generates a small number of particles and is used to form diffusion inhibiting films and seed films of interconnects of semiconductor devices simultaneously. The target is a Mn-containing copper alloy sputtering target that generates few particles, comprising a copper alloy containing 0.6 to 30 mass % of Mn with the balance …
- Who is the assignee on this patent?
- Aoki Shoji, Wada Masahiko, Koide Masato, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification C23C14/3414. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue May 12 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).