Alternating hardmasks for tight-pitch line formation

Patent metadata

Field	Value
Publication number	US-11031248-B2
Application number	US-201916508691-A
Country	US
Kind code	B2
Filing date	Jul 11, 2019
Priority date	Feb 28, 2017
Publication date	Jun 8, 2021
Grant date	Jun 8, 2021

Abstract

A method for forming fins includes forming a three-color hardmask fin pattern on a fin base layer. The three-color hardmask fin pattern includes hardmask fins of three mutually selectively etchable compositions. Some of the fins of the first color are etched away with a selective etch that does not remove fins of a second color or a third color and that leaves at least one fin of the first color behind. The fins of the second color are etched away. Fins are etched into the fin base layer by anisotropically etching around remaining fins of the first color and fins of the third color.

First claim

What is claimed is:

1. A method for forming fins, comprising:
forming a three-color hardmask fin pattern on a fin base layer, the three-color hardmask fin pattern comprising hardmask fins of three mutually selectively etchable compositions;
etching away some of the fins of a first color with a selective etch that does not remove fins of a second color or a third color and that leaves at least one fin of the first color behind;
etching away the fins of the second color; and
etching fins into the fin base layer by anisotropically etching around remaining fins of the first color and fins of the third color.

2. The method of claim 1 , wherein forming the three-color hardmask fin pattern comprises:
forming fins of the first color on the fin base layer;
depositing a second-color material around the fins of the first color;
etching away fins of the first color, leaving gaps; and
forming fins of a third color in the gaps.

3. The method of claim 2 , wherein forming fins of the first color comprises:
forming self-assembled fins directed by a surface alternating regions of seed material and brush material, the self-assembled fins comprising fins of alternating polymer materials;
etching away every other self-assembled fin; and
etching down into a layer of first-color material around remaining self-assembled fins to form fins of a first color, leaving remaining fins having differing heights.

4. The method of claim 3 , wherein the fins of the first color each comprise a cap of one or more dielectric layers, with different dielectric layers corresponding to different heights of the fins of the first color.

5. The method of claim 3 , wherein forming self-assembled fins comprises applying a block copolymer material having two molecular chains of similar or equal length, wherein one of the two molecular chains is attracted to the seed material.

6. The method of claim 5 , wherein a first chain of the block copolymer material comprises polystyrene.

7. The method of claim 6 , wherein a second chain of the block copolymer material comprises poly(methyl methacrylate).

8. The method of claim 6 , wherein a second chain of the block copolymer material comprises polyvinylphenol.

9. The method of claim 3 , wherein etching away fins of the first color comprises etching away the fins of the first color having a greater-than-average height.

10. The method of claim 1 , further comprising masking a region that covers at least one fin of the first color by forming a mask with a lithographic process having a minimum pitch size that is greater than a pitch of the three-color hardmask fin pattern.

11. The method of claim 1 , further comprising:
masking a region on the three-color hardmask fin pattern, leaving one or more fins of the third color exposed; and
etching away all exposed fins of the third color with a selective etch that does not remove fins of the first color or the second color.

12. A method of forming a three-color hardmask fin pattern, comprising:
depositing a second-color material around a series of at least four fins of a first color;
etching away alternating fins of the first color, leaving gaps, wherein the etch further leaves at least one fin of the first color remaining; and
forming fins of a third color in the gaps.

13. The method of claim 12 , wherein forming fins of the first color comprises:
forming self-assembled fins directed by a surface alternating regions of seed material and brush material, the self-assembled fins comprising fins of alternating polymer materials;
etching away every other self-assembled fin, leaving remaining self-assembled fins having differing heights; and
etching down into a layer of first-color material around remaining self-assembled fins to form fins of a first color.

14. The method of claim 13 , wherein the fins of the first color each comprise a cap of one or more dielectric layers, with different dielectric layers corresponding to different heights of the fins of the first color.

15. The method of claim 13 , wherein forming self-assembled fins comprises applying a material having two molecular chains of similar or equal length, wherein one of the two molecular chains is attracted to the seed material.

16. The method of claim 15 , wherein a first chain of the material comprises polystyrene.

17. The method of claim 16 , wherein a second chain of the material comprises poly(methyl methacrylate).

18. The method of claim 16 , wherein a second chain of the material comprises polyvinylphenol.

19. The method of claim 13 , wherein etching away fins of the first color comprises etching away the fins of the first color having a greater-than-average height.

20. A method of forming a three-color hardmask fin pattern, comprising:
forming fins of a first color on a fin base layer, by:
forming self-assembled fins directed by a surface alternating regions of seed material and brush material;
etching away every other self-assembled fin, leaving remaining self-assembled fins having differing heights; and
etching down into a layer of first-color material around remaining self-assembled fins to form fins of a first color;
depositing a second-color material around the fins of the first color;
etching away fins of the first color, leaving gaps; and
forming fins of a third color in the gaps.

21. The method of claim 20 , wherein etching away fins of the first color comprises etching away the fins of the first color having a greater-than-average height.

Assignees

• Tessera Inc

Inventors

• Burns Sean D
• Felix Nelson M
• Liu Chi-Chun
• Mignot Yann A M
• Sieg Stuart A

Classifications

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/694

  characterised by their behaviour during the process, e.g. soluble masks or redeposited masks · CPC title

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• H10P50/242

  of Group IV materials · CPC title