Vacuum pump protection against deposition byproduct buildup

Patent metadata

Field	Value
Publication number	US-11031215-B2
Application number	US-201916584095-A
Country	US
Kind code	B2
Filing date	Sep 26, 2019
Priority date	Sep 28, 2018
Publication date	Jun 8, 2021
Grant date	Jun 8, 2021

Abstract

A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.

First claim

What is claimed is:

1. An apparatus comprising:
a plasma etch chamber;
an etch gas delivery system configured to introduce one or more etch gases into the plasma etch chamber; and
a deposition precursor delivery system configured to introduce one or more deposition precursors into the plasma etch chamber; and
a vacuum pump system in fluid communication with the plasma etch chamber, wherein the vacuum pump system comprises:
a first roughing pump;
a second roughing pump in parallel with the first roughing pump, wherein the vacuum pump system is configured to direct the one or more etch gases through the first roughing pump without directing the etch gases through the second roughing pump when the plasma etch chamber is performing etch operations, wherein the vacuum pump system is configured to direct the one or more deposition precursors through the second roughing pump without directing the deposition precursors through the first roughing pump when the plasma etch chamber is performing deposition operations; and
a turbomolecular pump, the turbomolecular pump being in fluid communication with one or both of the first roughing pump and the second roughing pump.

2. The apparatus of claim 1 , further comprising:
a controller configured with instructions to perform the following operations:
perform one or more etch operations using the one or more etch gases in the plasma etch chamber;
exhaust the one or more etch gases from the plasma etch chamber using the vacuum pump system;
perform one or more atomic layer deposition (ALD) cycles of an ALD process using the one or more deposition precursors in the plasma etch chamber; and
exhaust the one or more deposition precursors from the plasma etch chamber using the vacuum pump system.

3. The apparatus of claim 2 , wherein the vacuum pump system further comprises:
a foreline in fluid communication with the processing chamber and configured to receive the one or more etch gases and the one or more deposition precursors from the processing chamber, wherein each of first roughing pump and the second roughing pump is positioned downstream of the foreline; and
a valve coupled to the foreline and configured to direct the one or more etch gases through the first roughing pump in a first position, and configured to direct the one or more deposition precursors through the second roughing pump in a second position.

4. The apparatus of claim 2 , further comprising:
a divert line in fluid communication with the deposition precursor delivery system, wherein the divert line is configured to divert unused deposition precursors in a deposition cycle from the deposition precursor delivery system through the second roughing pump.

5. The apparatus of claim 1 , wherein the vacuum pump system is configured to direct the one or more etch gases and the one or more deposition precursors through the first roughing pump, and direct unused deposition precursors in a deposition cycle through the second roughing pump.

6. The apparatus of claim 1 , wherein the one or more etch gases include hydrogen bromide (HBr) and the one or more deposition precursors include an amino-silane precursor.

7. The apparatus of claim 1 , further comprising:
a removal line downstream from and in fluid communication with both the first roughing pump and the second roughing pump for removing the one or more etch gases and the one or more deposition precursors from the vacuum pump system.

Assignees

• Lam Res Corp

Inventors

• Drewery John Stephen
• Kamp Tom A
• Yan Haoquan
• Daugherty John Edward
• Tan Ali Sucipto
• Tseng Ming-Kuei
• Freeman Bruce Edmund

Classifications

• H10P72/722

  Details of electrostatic chucks · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P72/0421

  for drying etching · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title