Power module for supporting high current densities

Patent metadata

Field	Value
Publication number	US-11024731-B2
Application number	US-201816171521-A
Country	US
Kind code	B2
Filing date	Oct 26, 2018
Priority date	Sep 11, 2011
Publication date	Jun 1, 2021
Grant date	Jun 1, 2021

Abstract

A power module is disclosed that includes a housing with an interior chamber wherein multiple switch modules are mounted within the interior chamber. The switch modules comprise multiple transistors and diodes that are interconnected to facilitate switching power to a load. In one embodiment, at least one of the switch modules supports a current density of at least 10 amperes per cm 2 .

First claim

What is claimed is:

1. A power module comprising:
a housing with an interior chamber; and
a plurality of switch modules mounted within the interior chamber and comprising at least two transistors wherein at least one of the two transistors comprises:
a drift layer having a first conductivity type;
a well region having a second conductivity type that is opposite the first conductivity type;
a source region in the well region, the source region having the first conductivity type;
a plurality of body contact regions that are interspersed between portions of the source region, the plurality of body contact regions having the second conductivity type in contact with the well region; and
a source ohmic contact that overlaps the source region in a source contact area and that overlaps the plurality of body contact regions in a plurality of body contact region areas;
wherein a ratio of a minimum dimension p 1 of a body contact region area of the plurality of body contact region areas to a minimum dimension w 1 of the well region is greater than 0.2.

2. The power module of claim 1 wherein the source ohmic contact completely overlaps the plurality of the body contact regions.

3. The power module of claim 1 wherein the power module further comprises a plurality of diodes interconnected to facilitate switching power to a load.

4. The power module of claim 3 wherein a diode of the plurality of diodes is an internal diode.

5. The power module of claim 3 wherein a diode of the plurality of diodes is an external diode.

6. The power module of claim 1 wherein a ratio of a minimum dimension n 1 of the source contact area to the minimum dimension w 1 of the well region is greater than 0.2.

7. The power module of claim 6 wherein the ratio of the minimum dimension n 1 of the source contact area to the minimum dimension w 1 of the well region is in a range of 0.2 to 1.

8. A power module comprising:
a housing with an interior chamber; and
a plurality of switch modules mounted within the interior chamber and comprising at least two transistors wherein at least one of the two transistors comprises:
a drift layer having a first conductivity type;
a well region having a second conductivity type that is opposite the first conductivity type;
a source region in the well region, the source region having the first conductivity type;
a body contact region having the second conductivity type in contact with the well region; and
a source ohmic contact that overlaps the source region in a source contact area and that overlaps the body contact region in a body contact region area, wherein a ratio of a minimum dimension n 1 of the source contact area to a minimum dimension w 1 of the well region is greater than 0.2.

9. The power module of claim 8 wherein the power module further comprises a plurality of diodes interconnected to facilitate switching power to a load.

10. The power module of claim 9 wherein a diode of the plurality of diodes is an internal diode.

11. The power module of claim 9 wherein a diode of the plurality of diodes is an external diode.

12. The power module of claim 8 wherein the ratio of the minimum dimension n 1 of the source contact area to the minimum dimension w 1 of the well region is greater than about 0.3.

13. The power module of claim 8 wherein the ratio of the minimum dimension n 1 of the source contact area to the minimum dimension w 1 of the well region is greater than about 0.5.

14. The power module of claim 8 wherein the ratio of the minimum dimension n 1 of the source contact region area to the minimum dimension w 1 of the well region is in a range of 0.2 to 1.

15. A power module comprising
a housing with an interior chamber; and
a plurality of switch modules mounted within the interior chamber and comprising at least two transistors wherein at least one of the two transistors comprises:
a drift layer having a first conductivity type;
a well region having a second conductivity type that is opposite the first conductivity type;
a source region in the well region, the source region having the first conductivity type;
a body contact region having the second conductivity type in contact with the well region; and
a source ohmic contact that overlaps the source region in a source contact area and that overlaps the body contact region in a body contact region area, wherein a ratio of a minimum dimension p 1 of the body contact region area to a minimum dimension w 1 of the well region is greater than 0.2.

16. The power module of claim 15 wherein the power module further comprises a plurality of diodes interconnected to facilitate switching power to a load.

17. The power module of claim 16 wherein a diode of the plurality of diodes is an internal diode.

18. The power module of claim 16 wherein a diode of the plurality of diodes is an external diode.

19. The power module of claim 15 , wherein the ratio of the minimum dimension p 1 of the body contact region area to the minimum dimension w 1 of the well region is greater than about 0.3.

20. The power module of claim 15 wherein the ratio of the minimum dimension p 1 of the body contact region area to the minimum dimension w 1 of the well region is greater than about 0.5.

21. The power module of claim 15 wherein the ratio of the minimum dimension p 1 of the body contact region area to the minimum dimension w 1 of the well region is in a range of 0.2 to 1.

22. The power module of claim 1 wherein the ratio of the minimum dimension p 1 of the body contact region area of the plurality of body contact region areas to the minimum dimension w 1 of the well region is in a range of 0.2 to 1.

Assignees

• Cree Inc

Inventors

• Henning Jason Patrick
• Zhang Qingchun
• Ryu Sei-Hyung
• Agarwal Anant Kumar
• Palmour John Williams
• Allen Scott

Classifications

• H10P30/2042 Primary

  into crystalline silicon carbide · CPC title

• H10P30/21

  of electrically active species · CPC title

• H10D64/01366

  the semiconductor being silicon carbide · CPC title

• H10W90/00

  Package configurations · CPC title

• H10D62/405

  Orientations of crystalline planes · CPC title