High performance power module

Patent metadata

Field	Value
Publication number	US-9640617-B2
Application number	US-201313893998-A
Country	US
Kind code	B2
Filing date	May 14, 2013
Priority date	Sep 11, 2011
Publication date	May 2, 2017
Grant date	May 2, 2017

Abstract

The present disclosure relates to a power module that has a housing with an interior chamber and a plurality of switch modules interconnected to facilitate switching power to a load. Each of the plurality of switch modules comprises at least one transistor and at least one diode mounted within the interior chamber and both the at least one transistor and the at least one diode are majority carrier devices, are formed of a wide bandgap material system, or both. The switching modules may be arranged in virtually any fashion depending on the application. For example, the switching modules may be arranged in a six-pack, full H-bridge, half H-bridge, single switch or the like.

First claim

What is claimed is:

1. A power module comprising:
a housing with an interior chamber; and
a plurality of switch modules mounted within the interior chamber and interconnected to facilitate switching power to a load wherein each of the plurality of switch modules comprises at least one transistor configured to receive a separate control signal that is varied to provide a sinusoidal drive current and at least one diode wherein a source of the at least one transistor and an anode of the at least one diode are directly coupled together and directly coupled to a pin and the power module is able to block 1200 volts, conduct at least 50 amperes, and has switching losses of less than ten milli-Joules.

2. The power module of claim 1 , wherein both the at least one transistor and the at least one diode are majority carrier devices.

3. The power module of claim 1 wherein the at least one transistor and the at least one diode are formed from a wide bandgap material system.

4. The power module of claim 3 wherein the wide bandgap material system is silicon carbide.

5. The power module of claim 3 wherein the wide bandgap material system is gallium nitride.

6. The power module of claim 3 wherein the at least one transistor is a MOSFET and the at least one diode is a Schottky diode.

7. The power module of claim 6 wherein the Schottky diode is a junction barrier Schottky diode.

8. The power module of claim 1 wherein the at least one transistor is coupled in anti-parallel with the at least one diode.

9. The power module of claim 8 wherein the at least one transistor comprises an array of transistors effectively coupled in parallel and the at least one diode comprises an array of diodes effectively coupled in parallel.

10. The power module of claim 2 wherein the power module is able to block at least 550 volts and operate at a switching frequency of at least 125 kHz.

11. The power module of claim 2 wherein the power module is able to block at least 1200 volts, conduct at least 50 amperes, and operate at a switching frequency of at least 75 kHz.

12. The power module of claim 2 wherein the power module has a power density of at least 400 watts/cm 2 .

13. The power module of claim 2 wherein the power module has a power density of at least 425 watts/cm 2 .

14. The power module of claim 2 wherein the power module has a power density of at least 500 watts/cm 2 .

15. The power module of claim 2 wherein the at least one transistor is formed over an aluminum nitride substrate.

16. The power module of claim 2 wherein the plurality of switch modules are mounted to a copper base plate and the at least one transistor is formed over an aluminum nitride substrate.

17. The power module of claim 2 wherein the plurality of switch modules are mounted to an aluminum silicon carbide base plate and the at least one transistor is formed over an aluminum nitride substrate.

18. The power module of claim 2 wherein:
the plurality of switch modules consists of six switch modules;
a first and second of the switch modules are connected in series between a first bus and a second bus to form a first shunt leg;
a third and fourth of the switch modules are connected in series between the first bus and the second bus to form a second shunt leg; and
a fifth and sixth of the switch modules are connected in series between the first bus and the second bus to form a third shunt leg.

19. The power module of claim 18 wherein the at least one transistor is a SiC MOSFET and the at least one diode is a SiC Schottky diode.

20. The power module of claim 19 wherein the SiC Schottky diode is a junction barrier diode.

21. The power module of claim 19 wherein the at least one transistor is coupled in anti-parallel with the at least one diode.

22. The power module of claim 21 wherein the at least one transistor comprises an array of transistors effectively coupled in parallel and the at least one diode comprises an array of diodes effectively coupled in parallel.

23. The power module of claim 2 wherein the power module is able to block 1200 volts, conduct 50 amperes, and has switching losses of less than ten milli-Joules.

24. The power module of claim 2 wherein the power module is able to block at least 550 volts and operate at a switching frequency of at least 125 kHz.

25. The power module of claim 2 wherein the power module is able to block at least 1200 volts, conduct at least 50 amperes, and operate at a switching frequency of at least 75 kHz.

26. The power module of claim 19 wherein the power module has a power density of at least 400 watts/cm 2 .

27. The power module of claim 19 wherein the power module has a power density of at least 425 watts/cm 2 .

28. The power module of claim 19 wherein the power module has a power density of at least 500 watts/cm 2 .

29. The power module of claim 19 wherein the at least one transistor is formed over an aluminum nitride substrate.

30. The power module of claim 1 wherein each of the plurality of switch modules forms a portion of a full H-bridge or a half H-bridge.

31. The power module of claim 1 , wherein both the at least one transistor and the at least one diode are formed from a wide bandgap material system.

32. The power module of claim 31 wherein the wide bandgap material system is silicon carbide.

33. The power module of claim 31 wherein the wide bandgap material system is gallium nitride.

34. The power module of claim 31 wherein the at least one transistor is a MOSFET and the at least one diode is a Schottky diode.

35. The power module of claim 34 wherein the Schottky diode is a junction barrier Schottky diode.

36. The power module of claim 31 wherein the at least one transistor is coupled in anti-parallel with the at least one diode.

37. The power module of claim 36 wherein the at least one transistor comprises an array of transistors effectively coupled in parallel and the at least one diode comprises an array of diodes effectively coupled in parallel.

38. The power module of claim 31 wherein the power module is able to block at least 550 volts and operate at a switching frequency of at least 125 kHz.

39. The power module of claim 31 wherein the power module is able to block at least 1200 volts, conduct at least 50 amperes, and operate at a switching frequency of at least 75 kHz.

40. The power module of claim 31 wherein the power module has a power density of at least 400 watts/cm 2 .

41. The power module of claim 31 wherein the power module has a power density of at least 425 watts/cm 2 .

42. The power module of claim 31 wherein the power module has a power density of at least 500 watts/cm 2 .

43. The power module of claim 31 wherein the at least one transistor is formed over an aluminum nitride substrate.

44. The power module of claim 31 wherein the plurality of switch modules are mounted to a copper base plate and the at least one transistor is formed over an aluminum nitride substrate.

45. The power module of claim 31 wherein the plurality of switch modules are mounted to an aluminum sili

Assignees

• Cree Inc

Inventors

• Das Mrinal K
• Callanan Robert J
• Lin Henry
• Palmour John Williams

Classifications

• H10W70/682

  comprising holes having chips therein · CPC title

• H10W72/5445

  being orthogonal to a side surface of the chip, e.g. parallel arrangements · CPC title

• H10W72/5475

  multiple bond wires connected to common bond pads at both ends of the wires · CPC title

• H10W72/527

  Multiple bond wires having different sizes · CPC title

• H10W72/07552

  changes in structures or sizes · CPC title