HIGH CURRENT, LOW SWITCHING LOSS SiC POWER MODULE

Patent metadata

Field	Value
Publication number	US-2016204101-A1
Application number	US-201615077329-A
Country	US
Kind code	A1
Filing date	Mar 22, 2016
Priority date	Sep 11, 2011
Publication date	Jul 14, 2016
Grant date	—

Abstract

A power module includes a housing with an interior chamber and multiple switch modules mounted within the interior chamber of the housing. The switch modules are interconnected and configured to facilitate switching power to a load. Each one of the switch modules includes at least one transistor and at least one diode. The at least one transistor and the at least one diode may be formed from a wide band-gap material system, such as silicon carbide (SiC), thereby allowing the power module to operate at high frequencies with lower switching losses when compared to conventional power modules.

First claim

1 . (canceled)

2 . A power module comprising:
a housing with an interior chamber; and a plurality of switch modules mounted within the interior chamber and interconnected to facilitate switching power to a load wherein each of the plurality of switch modules comprises at least one transistor and at least one diode and the power module is able to block at least 1200 volts, conduct at least 120 amperes, and has switching losses less than 25 milli-Joules.

3 . The power module of claim 2 wherein the power module has switching losses between 1 milli-Joules and 25 milli-Joules.

4 . The power module of claim 2 wherein the power module has switching losses between 1 milli-Joules and 20 milli-Joules.

5 . The power module of claim 2 wherein the power module has switching losses between 1 milli-Joules and 15 milli-Joules.

6 . The power module of claim 2 wherein the at least one transistor and the at least one diode are silicon carbide (SiC) devices.

7 . The power module of claim 6 wherein the at least one transistor is a metal-oxide-semiconductor field-effect transistor (MOSFET) and the at least one diode is a Schottky diode.

8 . The power module of claim 7 wherein the at least one transistor is coupled in anti-parallel with the at least one diode.

9 . The power module of claim 8 wherein the at least one transistor comprises an array of transistors coupled in parallel and the at least one diode comprises an array of diodes coupled in parallel.

10 . The power module of claim 2 wherein the power module is configured to operate at a switching frequency of at least 50 kHz.

11 . A power module comprising:
a housing with an interior chamber; at least a first power substrate within the interior chamber, the first power substrate including one or more switch modules on a first surface of the first power substrate for facilitating switching power to a load, wherein each of the one or more switch modules comprise at least one transistor and at least one diode; and a gate connector coupled to a gate contact of the at least one transistor of each of the one or more switch modules via a signal path that includes a shielded cable.

12 . The power module of claim 11 wherein the shielded cable is a coaxial cable.

13 . The power module of claim 11 wherein the power module is able to block at least 1200 volts, conduct at least 120 amperes, and has switching losses less than 25 milli-Joules.

14 . The power module of claim 11 wherein the at least one transistor and the at least one diode are silicon carbide (SiC) devices.

15 . The power module of claim 11 wherein the power module is configured to operate at a switching frequency of at least 50 kHz.

16 . A power module comprising:
a housing with an interior chamber; a plurality of switch modules mounted within the interior chamber and interconnected to facilitate switching power to a load wherein each of the plurality of switch modules comprises at least one transistor configured to conduct current in a first direction via a channel in the at least one transistor and conduct current in a second direction opposite the first direction via an internal body diode in the at least one transistor.

17 . The power module of claim 16 wherein the power module is able to block at least 1200 volts, conduct at least 120 amperes, and has switching losses less than 25 milli-Joules.

18 . The power module of claim 16 wherein the at least one transistor is a metal-oxide-semiconductor field-effect transistor (MOSFET).

19 . The power module of claim 16 wherein the at least one transistor is a silicon carbide (SiC) device.

20 . The power module of claim 16 wherein the at least one transistor comprises an array of transistors coupled in parallel.

21 . The power module of claim 16 wherein the power module is configured to operate at a switching frequency of at least 50 kHz.

Assignees

• Cree Inc

Inventors

• Das Mrinal K
• Lin Henry
• Schupbach Marcelo
• Palmour John Williams

Classifications

• H10W70/682

  comprising holes having chips therein · CPC title

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/5445

  being orthogonal to a side surface of the chip, e.g. parallel arrangements · CPC title

• H10W72/07554

  changes in dispositions · CPC title

• H10W72/547

  Dispositions of multiple bond wires · CPC title