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Field effect transistor devices with low source resistance
US9029945B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9029945-B2 |
| Application number | US-201113102510-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 6, 2011 |
| Priority date | May 6, 2011 |
| Publication date | May 12, 2015 |
| Grant date | May 12, 2015 |
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Abstract
Official abstract text for this publication.
A semiconductor device includes a drift layer having a first conductivity type, a well region in the drift layer having a second conductivity type opposite the first conductivity type, and a source region in the well region. The source region has the first conductivity type and defines a channel region in the well region. The source region includes a lateral source region adjacent the channel region and a plurality of source contact regions extending away from the lateral source region opposite the channel region. A body contact region having the second conductivity type is between at least two of the plurality of source contact regions and is in contact with the well region. A source ohmic contact overlaps at least one of the source contact regions and the body contact region. A minimum dimension of a source contact area of the semiconductor device is defined by an area of overlap between the source ohmic contact and the at least one source contact region.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device, comprising: a drift layer having a first conductivity type; a well region in the drift layer having a second conductivity type opposite the first conductivity type; a source region in the well region, the source region having the first conductivity type and defining a channel region in the well region, wherein the source region comprises a lateral source region adjacent the channel region and a plurality of source contact regions…
Assignees
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Classifications
- H10D30/66Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9029945B2 cover?
- A semiconductor device includes a drift layer having a first conductivity type, a well region in the drift layer having a second conductivity type opposite the first conductivity type, and a source region in the well region. The source region has the first conductivity type and defines a channel region in the well region. The source region includes a lateral source region adjacent the channel r…
- Who is the assignee on this patent?
- Ryu Sei-Hyung, Capell Doyle Craig, Cheng Lin, and 5 more
- What technology area does this patent fall under?
- Primary CPC classification H10D30/66. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue May 12 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).