Wafer soak temperature readback and control via thermocouple embedded end effector for semiconductor processing equipment

Patent metadata

Field	Value
Publication number	US-11011397-B2
Application number	US-201816227399-A
Country	US
Kind code	B2
Filing date	Dec 20, 2018
Priority date	Dec 20, 2018
Publication date	May 18, 2021
Grant date	May 18, 2021

Abstract

A workpiece processing system and method provides an end effector coupled to a workpiece transfer apparatus. The end effector has support members for selectively contacting and supporting a workpiece. One or more temperature sensors are coupled to the support members and are configured to contact a backside of the workpiece to measure and define one or more measured temperatures of the workpiece. A heated chuck has a support surface at a predetermined temperature, and is configured to radiate heat from the support surface. A controller control the workpiece transfer apparatus to selectively support the workpiece at a predetermined distance from the support surface of the heated chuck to radiatively heat the workpiece, and to selectively transfer the workpiece from the end effector to the support surface of the heated chuck based, at least in part, on the one or more measured temperatures.

First claim

What is claimed is:

1. A workpiece processing system, comprising:
a workpiece transfer apparatus;
an end effector operably coupled to the workpiece transfer apparatus and configured to selectively support a workpiece;
one or more temperature sensors operably coupled to the end effector, wherein the one or more temperature sensors are configured to contact a backside of the workpiece and to respectively measure one or more temperatures of the workpiece, therein respectively defining one or more measured temperatures;
a thermal apparatus having a support surface at a predetermined temperature; and
a controller configured to control the workpiece transfer apparatus to selectively support the workpiece at a predetermined distance from the support surface of the thermal apparatus, thereby transferring heat between the support surface and the workpiece, and to selectively transfer the workpiece from the end effector to the support surface of the thermal apparatus based, at least in part, on the one or more measured temperatures.

2. The workpiece processing system of claim 1 , wherein the thermal apparatus comprises a heated clamping apparatus configured to radiate heat from the support surface and to selectively clamp the workpiece to the support surface.

3. The workpiece processing system of claim 2 , wherein the thermal apparatus comprises a heated electrostatic chuck.

4. The workpiece processing system of claim 1 , wherein the one or more temperature sensors comprises one or more of thermocouple and an RTD.

5. The workpiece processing system of claim 1 , wherein the end effector comprises three or more support members operably coupled to the end effector, wherein the three or more support members are configured to selectively contact and support the workpiece.

6. The workpiece processing system of claim 5 , wherein the one or more temperature sensors are operably coupled at least one of the three or more support members.

7. The workpiece processing system of claim 5 , wherein three or more temperature sensors are operably coupled to the three or more support members, respectively.

8. The workpiece processing system of claim 1 , wherein the controller is further configured to control the workpiece transfer apparatus to selectively vary the predetermined distance based, at least in part, on the measured temperature.

9. The workpiece processing system of claim 1 , wherein the controller is configured to selectively transfer the workpiece from the end effector to the support surface of the thermal apparatus based, at least in part, on a rate of change of the measured temperature.

10. The workpiece processing system of claim 1 , wherein the controller is configured to selectively transfer the workpiece from the end effector to the support surface of the thermal apparatus based, at least in part, on the measured temperature reaching a threshold temperature associated with the predetermined temperature.

11. The workpiece processing system of claim 10 , wherein the threshold temperature is within approximately 5 percent of the predetermined temperature.

12. The workpiece processing system of claim 1 , wherein the thermal apparatus comprises a chilled support apparatus configured to absorb heat from the workpiece.

13. A workpiece processing system, comprising:
a workpiece transfer apparatus;
an end effector operably coupled to the workpiece transfer apparatus, wherein the end effector comprises three or more support members operably coupled to the end effector and configured to selectively contact and support the workpiece;
one or more temperature sensors operably coupled to the one or more support members, wherein the one or more temperature sensors are configured to contact a backside of the workpiece and to respectively measure one or more temperatures of the workpiece, therein respectively defining one or more measured temperatures;
a heated chuck having a support surface at a predetermined temperature, wherein the heated chuck is configured to radiate heat from the support surface; and
a controller configured to control the workpiece transfer apparatus to selectively support the workpiece at a predetermined distance from the support surface of the heated chuck, thereby radiatively heating the workpiece, and to selectively transfer the workpiece from the end effector to the support surface of the heated chuck based, at least in part, on the one or more measured temperatures.

14. The workpiece processing system of claim 13 , wherein the one or more temperature sensors comprises one or more of thermocouple and an RTD.

15. The workpiece processing system of claim 13 , wherein three or more temperature sensors are operably coupled to the three or more support members, respectively.

16. The workpiece processing system of claim 13 , wherein the controller is further configured to control the workpiece transfer apparatus to selectively vary the predetermined distance based, at least in part, on the measured temperature.

17. The workpiece processing system of claim 13 , wherein the controller is configured to selectively transfer the workpiece from the end effector to the support surface of the heated chuck based, at least in part, on a rate of change of the measured temperature.

18. The workpiece processing system of claim 13 , wherein the controller is configured to selectively transfer the workpiece from the end effector to the support surface of the heated chuck based, at least in part, on the measured temperature reaching a threshold temperature associated with the predetermined temperature.

19. The workpiece processing system of claim 18 , wherein the threshold temperature is within approximately 5 percent of the predetermined temperature.

20. A method for controlling a temperature of a workpiece, comprising:
measuring a temperature of a backside surface of the workpiece when the workpiece resides on an end effector above a clamping surface of a thermal chuck via a temperature sensor contacting the backside surface, therein defining a measured temperature; and
transferring the workpiece from the end effector to the clamping surface of the thermal chuck based, at least in part, on the measured temperature.

Assignees

• Axcelis Tech Inc

Inventors

• Baggett John

Classifications

• H10P72/7602

  the wafers being placed on a robot blade or gripped by a gripper for conveyance · CPC title

• H10P72/722

  Details of electrostatic chucks · CPC title

• H10P72/0436 Primary

  mainly by radiation · CPC title

• H10P72/0602 Primary

  Temperature monitoring · CPC title

• H10P72/3308

  Vertical transfer of a single workpiece · CPC title