Forming method of hard mask

Patent metadata

Field	Value
Publication number	US-11004684-B2
Application number	US-201916253380-A
Country	US
Kind code	B2
Filing date	Jan 22, 2019
Priority date	Mar 31, 2016
Publication date	May 11, 2021
Grant date	May 11, 2021

Abstract

A catalyst is imparted selectively to a plateable material portion 32 by performing a catalyst imparting processing on a substrate W having a non-plateable material portion 31 and the plateable material portion 32 formed on a surface thereof. Then, a hard mask layer 35 is formed selectively on the plateable material portion 32 by performing a plating processing on the substrate W. The non-plateable material portion 31 is made of SiO2 as a main component, and the plateable material portion 32 is made of a material including, as a main component, a material containing at least one of a OCHx group and a NHx group, a metal material containing Si as a main component, a material containing carbon as a main component or a catalyst metal material.

First claim

We claim:

1. A forming method of a hard mask, comprising:
preparing a substrate having a member made of a non-plateable material and a member made of a plateable material, the member made of the non-plateable material and the member made of the plateable material being exposed, and the member made of the plateable material protruding from the member made of the non-plateable material and having a predetermined pattern on the member made of the non-plateable material;
supplying a catalyst selectively to an exposed surface of the member made of the plateable material by performing a catalyst supplying processing on the substrate;
forming a hard mask layer selectively on the exposed surface of the member made of the plateable material by performing a plating processing on the substrate; and
etching the member made of the non-plateable material by using the hard mask layer as a mask,
wherein the non-plateable material comprises SiO 2 as a main component, and
the plateable material comprises a material including, as a main component, a material containing at least one of a OCH x group and a NH x group or a material containing carbon as a main component.

2. The forming method of the hard mask of claim 1 ,
wherein the plateable material includes, as the main component, a material containing a Si—OCH x group or a Si—NH x group.

3. The forming method of the hard mask of claim 1 ,
wherein the hard mask layer is made of a material including, as a main component, Co or a Co alloy containing B or P, or a Ni-based material.

4. The forming method of the hard mask of claim 1 ,
wherein the catalyst contains an iron group element, a platinum metal element, Cu, Ag or Au.

Assignees

• Tokyo Electron Ltd

Inventors

• Iwashita Mitsuaki
• Nagao Takeshi
• Mizutani Nobutaka
• Tanaka Takashi
• Yatsuda Koichi
• IWAI Kazutoshi
• Inatomi Yuichiro

Classifications

• H10P50/692

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P50/71

  using masks for conductive or resistive materials · CPC title

• H10P76/405 Primary

  characterised by their composition, e.g. multilayer masks · CPC title

• C23C18/1632

  Features specific for the apparatus, e.g. layout of cells and of its equipment, multiple cells · CPC title