Method and apparatus for dynamic lithographic exposure

US11003089B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-11003089-B2
Application numberUS-202016850285-A
CountryUS
Kind codeB2
Filing dateApr 16, 2020
Priority dateJan 27, 2016
Publication dateMay 11, 2021
Grant dateMay 11, 2021

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

The present disclosure, in some embodiments, relates to a method of performing a photolithography process. The method includes forming a photosensitive material over a substantially flat upper surface of a substrate. The substantially flat upper surface of the substrate extends between opposing sides of the substrate. The photosensitive material is exposed to electromagnetic radiation at a plurality of depths of focus that are centered at different heights over the substrate. The photosensitive material is developed to remove a part of the photosensitive material.

First claim

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What is claimed is: 1. A method of performing a photolithography process, comprising: forming a photosensitive material over a substantially flat upper surface of a substrate, wherein the substantially flat upper surface of the substrate extends between opposing sides of the substrate; exposing the photosensitive material to electromagnetic radiation at a plurality of depths of focus that are centered at different heights over the substrate; and developing the photosensitive material to remove a part of the photosensitive material. 2. The method of claim 1 , wherein the photosensitive material is continuously exposed to the electromagnetic radiation while a distance between a source of the electromagnetic radiation and the substrate changes. 3. The method of claim 1 , wherein at least two of the plurality of depths of focus vertically overlap. 4. The method of claim 1 , wherein the plurality of depths of focus comprise a first depth of focus centered at a first point over the substrate and a second depth of focus centered at a second point directly over the first point. 5. The method of claim 1 , wherein the electromagnetic radiation exposes the photosensitive material to a same pattern at each of the plurality of depths of focus. 6. The method of claim 1 , wherein the plurality of depths of focus collectively expose the photosensitive material over a cumulative depth of focus that is larger than any one of the plurality of depths of focus. 7. The method of claim 1 , wherein the plurality of depths of focus continuously extend between an upper surface of the photosensitive material and a lower surface of the photosensitive material. 8. A method of performing a photolithography process, comprising: focusing electromagnetic radiation over a first depth of focus at a first time, wherein the first depth of focus is centered at a first depth below an upper surface of a photosensitive material over a substrate; focusing the electromagnetic radiation over a second depth of focus at a second time, wherein the second depth of focus is centered at a second depth below the upper surface of the photosensitive material; and wherein the second depth of focus vertically overlaps the first depth of focus. 9. The method of claim 8 , wherein the photosensitive material is exposed to separate bursts of electromagnetic radiation at the first time and at the second time. 10. The method of claim 8 , wherein the first depth of focus and the second depth of focus collectively span a larger vertical distance than the first depth of focus or the second depth of focus. 11. The method of claim 8 , wherein the first depth of focus and the second depth of focus collectively define a cumulative depth of focus that has a first process window that is larger than a second process window provided by either the first depth of focus or the second depth of focus. 12. The method of claim 8 , wherein the first depth of focus and the second depth of focus collectively define a cumulative depth of focus that has a first process window that is over 30% larger than a second process window provided by either the first depth of focus or the second depth of focus. 13. The method of claim 8 , wherein a point within the photosensitive material receives a first dose of the electromagnetic radiation over both the first time and the second time that is greater than a second dose of the electromagnetic radiation that the point receives at either the first time or the second time. 14. The method of claim 8 , wherein the first depth of focus has a largest dose at a first height over the substrate and the second depth of focus has a largest dose at a second height over the substrate; and wherein the first depth of focus and the second depth of focus provide for a collective depth of focus having a largest dose at a point that is vertically between the first height and the second height. 15. The method of claim 8 , wherein the electromagnetic radiation is focused at the first time along a first path that converges at a first point; and wherein the electromagnetic radiation is focused at the second time along a second path that converges at a second point that is directly above the first point. 16. A method of performing a photolithography process, comprising: forming a photosensitive material over a substrate; and exposing the photosensitive material to electromagnetic radiation, wherein the photosensitive material is continuously exposed to the electromagnetic radiation while a focus of the electromagnetic radiation moves along a vertical direction that is perpendicular to an upper surface of the photosensitive material. 17. The method of claim 16 , wherein the electromagnetic radiation exposes the photosensitive material to a same pattern while the focus of the electromagnetic radiation moves along the vertical direction. 18. The method of claim 16 , wherein the focus of the electromagnetic radiation moves so as to monotonically increase a depth of an image plane of the electromagnetic radiation within the photosensitive material. 19. The method of claim 16 , further comprising: changing a location of a stage configured to hold the substrate while continuously exposing the photosensitive material to the electromagnetic radiation. 20. The method of claim 16 , wherein the electromagnetic radiation is focused at a first time along a first path that converges at a first point over the substrate; and wherein the electromagnetic radiation is focused at a second time along a second path that converges at a second point that is directly above the first point.

Assignees

Inventors

Classifications

  • Focus drilling, i.e. increase in depth of focus for exposure by modulating focus during exposure [FLEX] · CPC title

  • Focus · CPC title

  • G03F7/203Primary

    comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation · CPC title

  • Additives or means to improve the lithographic properties; Processing solutions characterised by such additives; Treatment after development or transfer, e.g. finishing, washing; Correction or deletion fluids · CPC title

  • Processing photosensitive materials; Apparatus therefor (G03F7/12 - G03F7/24 take precedence) · CPC title

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What does patent US11003089B2 cover?
The present disclosure, in some embodiments, relates to a method of performing a photolithography process. The method includes forming a photosensitive material over a substantially flat upper surface of a substrate. The substantially flat upper surface of the substrate extends between opposing sides of the substrate. The photosensitive material is exposed to electromagnetic radiation at a plur…
Who is the assignee on this patent?
Taiwan Semiconductor Mfg Co Ltd
What technology area does this patent fall under?
Primary CPC classification G03F7/70333. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue May 11 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).