Method and apparatus for dynamic lithographic exposure

US10274830B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10274830-B2
Application numberUS-201715400015-A
CountryUS
Kind codeB2
Filing dateJan 6, 2017
Priority dateJan 27, 2016
Publication dateApr 30, 2019
Grant dateApr 30, 2019

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The present disclosure relates to a dynamic lithographic exposure method, and an associated apparatus, which exposes a photosensitive material over a plurality of depths of focus respectively spanning a different region of the photosensitive material. By exposing the photosensitive material over a plurality of depths of focus, the exposure of the photosensitive material is improved resulting in a larger lithographic process window. In some embodiments, the dynamic lithographic exposure method is performed by forming a photosensitive material over a substrate. The photosensitive material is exposed to electromagnetic radiation at a plurality of depths of focus that respectively span a different region within the photosensitive material. Exposing the photosensitive material to the electromagnetic radiation modifies a solubility of an exposed region within the photosensitive material. The photosensitive material is then developed to remove the soluble region.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of developing a photosensitive material, comprising: forming a photosensitive material over a substrate; exposing the photosensitive material to electromagnetic radiation at a plurality of depths of focus that are respectively smaller than a thickness of the photosensitive material and that respectively span a different region within the photosensitive material, wherein exposing the photosensitive material to the electromagnetic radiation modifies a solubility of an exposed region within the photosensitive material; and developing the photosensitive material to remove a soluble region. 2. The method of claim 1 , wherein exposing the photosensitive material at the plurality of depths of focus comprises continuously exposing the photosensitive material to the electromagnetic radiation while moving the substrate, wherein the plurality of depths of focus are substantially aligned along a vertical direction that is normal to an upper surface of the photosensitive material. 3. The method of claim 2 , wherein the plurality of depths of focus comprise a first depth of focus having a greatest dose at a center of the first depth of focus, and a second depth of focus having a greatest dose at a center of the second depth of focus; and wherein the first depth of focus and the second depth of focus provide for a collective depth of focus having a collective dose that is greatest at a point that is vertically between the center of the first depth of focus and the center of the second depth of focus. 4. The method of claim 1 , further comprising: operating an actuator to change a position of a projection optics during exposure of a same pattern within the photosensitive material, wherein the projection optics are located between a photomask and the substrate. 5. The method of claim 4 , further comprising: focusing the electromagnetic radiation on a first image plane at a first time, wherein the first image plane is located at a first depth below an upper surface of the photosensitive material; and focusing the electromagnetic radiation on a second image plane at a second time, wherein the second image plane is located at a second depth below the upper surface of the photosensitive material. 6. The method of claim 5 , wherein images formed on the first image plane and the second image plane are offset in a vertical direction and substantially aligned along a lateral direction. 7. The method of claim 1 , wherein the photosensitive material is arranged over a substantially flat upper surface of the substrate that extends between outermost sidewalls of the substrate. 8. The method of claim 4 , further comprising: determining the thickness of the photosensitive material; determining a minimum feature size to be exposed; and determining a range over which a focus of the electromagnetic radiation is changed based upon the thickness or the minimum feature size. 9. The method of claim 1 , further comprising: continuously exposing the photosensitive material to electromagnetic radiation in a same pattern while dynamically changing the depth of focus of the electromagnetic radiation. 10. The method of claim 1 , further comprising: discretely exposing the photosensitive material to electromagnetic radiation in a same pattern between changing the depth of focus of the electromagnetic radiation. 11. The method of claim 1 , further comprising: processing the substrate after removing the soluble region; and removing the photosensitive material from the substrate after processing the substrate. 12. The method of claim 11 , further comprising: forming a second layer of photosensitive material over the substrate after removing the photosensitive material; exposing the second layer of photosensitive material to the electromagnetic radiation at a second plurality of depths of focus that respectively span a different spatial region within the second layer of photosensitive material, wherein exposing the second layer of photosensitive material to the electromagnetic radiation forms a second soluble region within the second layer of photosensitive material having a different pattern than the soluble region; and developing the second layer of photosensitive material to remove the second soluble region. 13. A method of developing a photosensitive material, comprising: forming a photosensitive material over a substrate; focusing electromagnetic radiation on a first image plane at a first time, wherein the first image plane is located at a first depth below an upper surface of the photosensitive material and has a first depth of focus; focusing the electromagnetic radiation on a second image plane at a second time, wherein the second image plane is located at a second depth below the upper surface of the photosensitive material and has a second depth of focus; and wherein exposing the photosensitive material to the electromagnetic radiation modifies a solubility of an exposed region of the photosensitive material, wherein the second depth of focus vertically extends to a center of the first depth of focus. 14. The method of claim 13 , further comprising: focusing the electromagnetic radiation on the first image plane at the first time along a first path that converges at a first point; and focusing the electromagnetic radiation on the second image plane at the second time along a second path that converges at a second point that is directly above the first point. 15. The method of claim 14 , wherein the first depth of focus and the second depth of focus are respectively smaller than a thickness of the photosensitive material, and wherein the first depth of focus and the second depth of focus collectively define a collective depth of focus is larger than the thickness of the photosensitive material. 16. The method of claim 13 , further comprising: removing the photosensitive material from the substrate; forming a second layer of photosensitive material over the substrate after removing the photosensitive material; and exposing the second layer of photosensitive material to the electromagnetic radiation at a second plurality of depths of focus that respectively span a different spatial region within the second layer of photosensitive material, wherein exposing the second layer of photosensitive material to the electromagnetic radiation modifies a solubility of a second region within the second layer of photosensitive material having a different pattern than the exposed region. 17. A method of performing a photolithography process, comprising: forming a photosensitive material over a substrate; providing electromagnetic radiation to the photosensitive material over a first depth of focus at a first time to expose a pattern within the photosensitive material; providing the electromagnetic radiation to the photosensitive material over a second depth of focus at a second time to expose the pattern within the photosensitive material, wherein the first depth of focus and the second depth of focus define a collective depth of focus having a dose that is greatest at a point that is vertically between a center of the first depth of focus and a center of the second depth of focus; and removing a part of the photosensitive material after the second time. 18. The method of claim 17 , further comprising: changing a focus of the electromagnetic radiation provided to the photosensitive material over time, so as to monotonically change a position of an image plane of the electromagnetic radiation relative to an upper surface of the photosen

Assignees

Inventors

Classifications

  • Exposing sequentially with the same light pattern different positions of the same surface {(G03F7/70 takes precedence)} · CPC title

  • G03F7/3007Primary

    combined with electrical means, e.g. force fields · CPC title

  • Focus drilling, i.e. increase in depth of focus for exposure by modulating focus during exposure [FLEX] · CPC title

  • Focus · CPC title

  • G03F7/203Primary

    comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation · CPC title

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What does patent US10274830B2 cover?
The present disclosure relates to a dynamic lithographic exposure method, and an associated apparatus, which exposes a photosensitive material over a plurality of depths of focus respectively spanning a different region of the photosensitive material. By exposing the photosensitive material over a plurality of depths of focus, the exposure of the photosensitive material is improved resulting in…
Who is the assignee on this patent?
Taiwan Semiconductor Mfg Co Ltd
What technology area does this patent fall under?
Primary CPC classification G03F7/3007. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Apr 30 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).