Selectively removing titanium nitride hard mask and etch residue removal
US-10332784-B2 · Jun 25, 2019 · US
Etchant composition and method of fabricating integrated circuit device using the same
US10995269B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10995269-B2 |
| Application number | US-201715816699-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 17, 2017 |
| Priority date | Nov 24, 2016 |
| Publication date | May 4, 2021 |
| Grant date | May 4, 2021 |
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- Title
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Abstract
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A method of fabricating an integrated circuit device includes forming a structure on a substrate, the structure having a surface on which an oxide film and a nitride film are exposed; and selectively removing the nitride film from the oxide film and the nitride film by bringing the etchant composition into contact with the structure.
First claim
Opening claim text (preview).
What is claimed is: 1. An etchant composition comprising: phosphoric acid in an amount of about 85 weight % (wt %) of a total amount of the etchant composition; a siloxane compound including 1,5-trisiloxanediol, 1,1,3,3,5,5-hexamethyl-, diacetate in an amount of about 1.5 wt % of the total amount of the etchant composition; ammonium phosphate in an amount of about 0.5 wt % of the total amount of the etchant composition; a solvent; and trimethylamine in an amount of about 2.0 wt % of the total amount of the etchant composition. 2. The etchant composition according to claim 1 , having a nitride film to oxide film etch selectivity of about 723.40. 3. The etchant composition according to claim 2 , wherein the solvent is deionized water (DIW). 4. The etchant composition according to claim 2 , wherein the oxide film comprises silicon oxide, and the nitride film comprises Si 3 N 4 , SiON, SiCN, SiOCN, or combinations of two or more thereof. 5. An etchant composition comprising: phosphoric acid in an amount of about 85 weight % (wt %) of a total amount of the etchant composition; a siloxane compound including dimethoxy-propan-2-yl-trimethylsilyloxysilane in an amount of about 1.0 wt % of the total amount of the etchant composition; ammonium phosphate in an amount of about 0.5 wt % of the total amount of the etchant composition; and a solvent. 6. The etchant composition according to claim 5 , having a nitride film to oxide film etch selectivity of about 657.64. 7. The etchant composition according to claim 6 , wherein the solvent is deionized water (DIW). 8. The etchant composition according to claim 6 , wherein the oxide film comprises silicon oxide, and the nitride film comprises Si 3 N 4 , SiON, SiCN, SiOCN, or combinations of two or more thereof.
Assignees
Inventors
Classifications
- H10P50/283Primary
by chemical means · CPC title
on sidewalls or on top surfaces of conductors (H10W20/076 takes precedence) · CPC title
Nitrides · CPC title
Oxides · CPC title
the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials · CPC title
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- What does patent US10995269B2 cover?
- A method of fabricating an integrated circuit device includes forming a structure on a substrate, the structure having a surface on which an oxide film and a nitride film are exposed; and selectively removing the nitride film from the oxide film and the nitride film by bringing the etchant composition into contact with the structure.
- Who is the assignee on this patent?
- Samsung Electronics Co Ltd, Soulbrain Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10P50/283. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue May 04 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).