Compositions for etching

Patent metadata

Field	Value
Publication number	US-9368647-B2
Application number	US-201514824786-A
Country	US
Kind code	B2
Filing date	Aug 12, 2015
Priority date	Oct 18, 2011
Publication date	Jun 14, 2016
Grant date	Jun 14, 2016

Abstract

Etching compositions are provided. The etching composition includes a phosphoric acid, ammonium ions and a silicon compound material. The silicon compound material includes a silicon atom, at least one selected from the group of a nitrogen atom, a phosphorus atom and a sulfur atom combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom. Methods utilizing the etching compositions are also provided.

First claim

What is claimed is:

1. A composition comprising:
a phosphoric acid;
ammonium ions; and
a silicon compound material,
wherein the silicon compound material comprises:
a silicon atom,
at least one selected from the group of a nitrogen atom, a phosphorus atom and a sulfur atom combined with the silicon atom, and
at least two oxygen atoms combined with the silicon atom.

2. The composition of claim 1 , wherein the silicon compound material is expressed by the following chemical Formula 1:

wherein R 1 , R 2 , R 3 , R 4 are an alkyl group,
wherein R 1 comprises at least one selected from the group of a nitrogen atom, a phosphorus atom and a sulfur atom.

3. The composition of claim 2 , wherein the alkyl group comprises 1 to 10 carbon atoms.

4. The composition of claim 1 , wherein the silicon compound material is one selected from the group consisting of amino propyl silanetriol, tri-(methyl, ethylamino-silane)methyl siloxane and tri-(di-ethylamino-silane)amino propyl siloxane.

5. The composition of claim 1 , wherein the silicon compound material is one selected from the group consisting of (2-diethylphosphatoethyl)triethoxysilane and 2-(diphenylphosphino)ethyltriethoxysilane.

6. The composition of claim 1 , wherein the silicon compound material is one selected from the group consisting of 3-thiocyanatopropyltriethoxysilane and (3-mercaptopropyl)trimethoxysilane.

7. The composition of claim 1 , wherein a content of the silicon compound material is within a range of about 0.01 wt % to about 15 wt % of the composition.

8. The composition of claim 1 , wherein a content of the ammonium ions is within a range of about 0.01 wt % to about 10 wt % of the composition.

9. The composition of claim 1 , wherein the composition has an etch selectivity between a silicon nitride layer and a silicon oxide layer, and the etch selectivity of the silicon nitride layer to the silicon oxide layer is greater than 100.

10. An etchant comprising:
a phosphoric acid;
ammonium ions or a compound comprising ammonium ions; and
a silicon compound material selected from the group consisting of amino propyl silanetriol, tri-(methyl, ethylamino-silane)methyl siloxane, tri-(di-ethylamino-silane)amino propyl siloxane, (2-diethylphosphatoethyl)triethoxysilane, 2-(diphenylphosphino)ethyltriethoxysilane, 3-thiocyanatopropyltriethoxysilane and (3-mercaptopropyl)trimethoxysilane.

11. The etchant of claim 10 , wherein the etchant comprises the phosphoric acid in an amount in a range from 75 wt % to 99.8 wt % of the etchant.

12. The etchant of claim 10 , wherein the etchant comprises ammonium ions or a compound comprising ammonium ions in an amount in a range from about 0.01 wt % to about 10 wt % of the etchant.

13. The etchant of claim 10 , wherein the etchant comprises the silicon compound material in an amount in a range from about 0.01 wt % to about 15 wt % of the etchant.

14. A method of forming a semiconductor device, the method comprising:
stacking nitride layers and oxide layers on a substrate to form a stack structure;
forming an opening in the stack structure;
forming a semiconductor pattern in the opening;
using a mask pattern to form a trench spaced apart from the semiconductor pattern to provide sidewalls exposing the nitride layers and oxide layers; and
removing the nitride layers,
wherein the nitride layers are removed using an etching process employing an etching composition comprising a phosphoric acid, ammonium ions or a compound comprising ammonium ions, and a silicon compound material,
wherein the silicon compound material comprises a silicon atom, at least one selected from the group of a nitrogen atom, a phosphorus atom and a sulfur atom combined with the silicon atom, and at least two oxygen atoms combined with the silicon atom.

15. The method of claim 14 , wherein the etching composition comprises the silicon compound material having a content in a range of about 0.01 wt % to about 15 wt % of the etching composition and the ammonium ions having a content in a range of about 0.01 wt % to about 10 wt % of the etching composition.

16. The method of claim 14 , wherein the silicon compound material is expressed by the following chemical Formula 1:

wherein R 1 , R 2 , R 3 , R 4 are an alkyl group,
wherein R 1 , comprising at least one selected from the group of a nitrogen atom, a phosphorus atom and a sulfur atom.

17. The method of claim 16 , wherein the alkyl group comprises 1 to 10 carbon atoms.

18. The method of claim 14 , wherein the silicon compound material is one selected from the group consisting of amino propyl silanetriol, tri-(methyl, ethylamino-silane)methyl siloxane, tri-(di-ethylamino-silane)amino propyl siloxane, (2-diethylphosphatoethyl)triethoxysilane, 2-(diphenylphosphino)ethyltriethoxysilane, 3-thiocyanatopropyltriethoxysilane and (3-mercaptopropyl)trimethoxysilane.

19. The method of claim 14 , wherein the compound comprising ammonium ions is selected from the group consisting of an ammonia gas, an ammonium chloride, an ammonium phosphate, an ammonium acetate, an ammonium sulfate, an ammonium formate and an ammonium complex compound.

20. The method of claim 14 , wherein the oxygen atoms of the silicon compound material combines with the oxide layers to protect the oxide layers during removal of the nitride layers.

Assignees

• Samsung Electronics Co Ltd
• Soulbrain Co Ltd

Inventors

• Hong Young-Taek
• Lee Jinuk
• Lim Junghun
• Park Jaewan
• Jeong Chanjin
• Han Hoon
• Park Seonghwan
• Lee Yanghwa
• Bae Sang Won
• Eom Daehong
• Yoon Byoungmoon
• Jeong Jihoon
• Kim Kyunghyun
• Kim Kyounghwan
• Mun Changsup
• Cha Se-Ho
• Ko Yongsun

Classifications

• H10P50/283

  by chemical means · CPC title

• H10D30/689

  Vertical floating-gate IGFETs · CPC title

• H10D30/0413

  of FETs having charge-trapping gate insulators, e.g. MNOS transistors · CPC title

• H10D30/0411

  of FETs having floating gates · CPC title

• H10D30/693 Primary

  Vertical IGFETs having charge trapping gate insulators · CPC title