Smart Skip Verify Mode For Programming A Memory Device
US-2017125117-A1 · May 4, 2017 · US
US10971222B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10971222-B2 |
| Application number | US-201916717532-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 17, 2019 |
| Priority date | Jun 5, 2018 |
| Publication date | Apr 6, 2021 |
| Grant date | Apr 6, 2021 |
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An apparatus is provided that includes a plurality of memory cells, a programming circuit configured to apply a plurality of programming pulses to the memory cells, and a scanning circuit configured to repeatedly switch between performing an n-state bitscan after each programming pulse until first predetermined criteria are satisfied, and performing an m-state bitscan after each programming pulse until second predetermined criteria are satisfied, where m>n, and n>0.
Opening claim text (preview).
The invention claimed is: 1. An apparatus comprising: a plurality of memory cells; a programming circuit configured to apply a plurality of programming pulses to the memory cells; and a scanning circuit configured to repeatedly switch between: performing an n-state bitscan after each of multiple programming pulses until first predetermined criteria are satisfied; and performing an m-state bitscan after each of multiple programming pulses until second predetermined criteria are satisfied, where m>n, and n>0. 2. The apparatus of claim 1 , wherein the first predetermined criteria comprises passing the n-state bitscan, and the second predetermined criteria comprises passing the m-state bitscan. 3. The apparatus of claim 2 , wherein: passing the n-state bitscan comprises determining that a number of memory cells that have not been programmed to a desired memory state is less than a predetermined value for each of n memory states; and passing the m-state bitscan comprises determining that the number of memory cells that have not been programmed to a desired memory state is less than the predetermined value for each of m memory states. 4. The apparatus of claim 1 , wherein: performing an n-state bitscan comprises determining a number of memory cells that have not been programmed to a desired memory state for each of n memory states; and performing an m-state bitscan comprises determining a number of memory cells that have not been programmed to a desired memory state for each of m memory states. 5. The apparatus of claim 1 , further comprising: a first counting circuit configured to count a number of memory cells that have not been programmed to a desired memory state for each of n memory states; and a second counting circuit configured to count a number of memory cells that have not been programmed to a desired memory state for each of m memory states. 6. The apparatus of claim 5 , wherein the first counting circuit and second counting circuit are each configured to collectively count memory cells for all memory states. 7. The apparatus of claim 5 , wherein the first counting circuit and second counting circuit are each configured to separately count memory cells for each memory state.
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