Method for cleaning lanthanum gallium silicate wafer

Patent metadata

Field	Value
Publication number	US-10964529-B2
Application number	US-201415300925-A
Country	US
Kind code	B2
Filing date	Apr 17, 2014
Priority date	Apr 17, 2014
Publication date	Mar 30, 2021
Grant date	Mar 30, 2021

Abstract

The present disclosure provides a method for cleaning a lanthanum gallium silicate wafer which comprises the following steps: at a step of 1, a cleaning solution constituted of phosphorous acid, hydrogen peroxide and deionized water is utilized to clean the lanthanum gallium silicate wafer with a megahertz sound wave; at a step of 2, the cleaned lanthanum gallium silicate wafer is rinsed and dried by spinning; at a step of 3, a cleaning solution constituted of ammonia, hydrogen peroxide and deionized water is utilized to clean the lanthanum gallium silicate wafer with the megahertz sound wave; at a step of 4, the cleaned lanthanum gallium silicate wafer is rinsed and dried by spinning; and at a step of 5, the rinsed and dried wafer is placed in an oven to be baked. The present invention shortens a period of acidic cleaning process and prolongs a period of alkaline cleaning and utilizes a more effective cleaning with megahertz sound wave to replace the conventional ultrasonic cleaning to solve the issue of cleaning the lanthanum gallium silicate wafer after a cutting process and to improve surface cleanliness of the lanthanum gallium silicate wafer to get a better cleaning effect.

First claim

The invention claimed is:

1. A method for cleaning a lanthanum gallium silicate wafer comprising:
at a step of 1, utilizing an acidic cleaning solution comprising phosphoric acid, hydrogen peroxide and deionized water to clean the lanthanum gallium silicate wafer with a megahertz sound wave;
at a step of 2, rinsing and drying the cleaned lanthanum gallium silicate wafer by spinning;
at a step of 3, utilizing an alkaline cleaning solution comprising ammonia, hydrogen peroxide and deionized water to clean the lanthanum gallium silicate wafer with the megahertz sound wave;
at a step of 4, rinsing and drying the cleaned lanthanum gallium silicate wafer by spinning; and
at a step of 5, baking the rinsed and dried wafer in an oven,
wherein a time period for alkaline cleaning is longer than that for acidic cleaning, and wherein the method uses only phosphoric acid without using any other acid.

2. The method for cleaning a lanthanum gallium silicate wafer according to claim 1 , wherein at the step of 1, the cleaning solution constituted of phosphoric acid, hydrogen peroxide and deionized water has a mass ratio of H 3 PO 4 :H 2 O 2 :H 2 O of 1:1:50˜100.

3. The method for cleaning a lanthanum gallium silicate wafer according to claim 1 , wherein at the step of 1, the cleaning with the megahertz sound wave is implemented at a temperature of 50˜60° C. for 10 minutes.

4. The method for cleaning a lanthanum gallium silicate wafer according to claim 1 , wherein at the step of 2, the lanthanum gallium silicate wafer is rinsed by deionized water at a room temperature for 10 minutes.

5. The method for cleaning a lanthanum gallium silicate wafer according to claim 1 , wherein at the step of 3, the cleaning solution constituted of ammonia, hydrogen peroxide and deionized water has a mass ratio of NH 3 :H 2 O 2 :H 2 O of 1:2:50-100.

6. The method for cleaning a lanthanum gallium silicate wafer according to claim 1 , wherein at the step of 3, the cleaning with the megahertz sound wave is implemented at a temperature of 50-60° C. for 50 minutes.

7. The method for cleaning a lanthanum gallium silicate wafer according to claim 1 , wherein at the step of 4, the lanthanum gallium silicate wafer is rinsed by deionized water at a room temperature for 10 minutes.

8. The method for cleaning a lanthanum gallium silicate wafer according to claim 1 , wherein at the step of 5, the lanthanum gallium silicate wafer is baked in a drying oven at a temperature of 40-90° C. for 20-30 minutes.

Assignees

• Inst Of Microelectronics Cas

Inventors

• Li Dongmei
• Zhou Lei
• Liang Shengfa
• Li Xiaojing
• Zhang Hao
• Xie Changqing
• Liu Ming

Classifications

• H10P70/15

  by wet cleaning only (H10P70/52 takes precedence) · CPC title

• H10P70/50 Primary

  characterised by the part to be cleaned · CPC title

• B08B3/12 Primary

  by sonic or ultrasonic vibrations · CPC title

• C11D3/3947

  Liquid compositions · CPC title

• C11D7/08

  Acids · CPC title