Radiation-sensitive compositions and patterning and metallization processes

Patent metadata

Field	Value
Publication number	US-10962880-B2
Application number	US-201916715178-A
Country	US
Kind code	B2
Filing date	Dec 16, 2019
Priority date	Dec 31, 2016
Publication date	Mar 30, 2021
Grant date	Mar 30, 2021

Abstract

A patterning process, comprises: (i) forming a radiation-sensitive film on a substrate, wherein the radiation-sensitive film comprises: (a) a resin, (b) a photoacid generator, (c) a first quencher, and (d) a second quencher; (ii) patternwise exposing the radiation-sensitive film to activating radiation; and (iii) contacting the radiation-sensitive film with an alkaline developing solution to form a resist pattern; wherein the resin comprises the following repeat units:

wherein: R 1 is selected from a hydrogen atom, an alkyl group having from 1 to 4 carbon atoms, a cyano group or a trifluoromethyl group; Z is a non-hydrogen substituent that provides an acid-labile moiety; n is from 40 to 90 mol %; m is from 10 to 60 mol %; and the total combined content of the two repeat units in the resin is 80 mol % or more based on all repeat units of the resin; and the first quencher is selected from benzotriazole or a derivative thereof.

First claim

What is claimed is:

1. A radiation-sensitive composition, comprising: (a) a resin; (b) two or more photoacid generators; (c) a first quencher; (d) a second quencher; and (e) a solvent;
wherein the resin comprises the following two repeat units:

wherein: R 1 is selected from a hydrogen atom, an alkyl group having from 1 to 4 carbon atoms, a cyano group or a trifluoromethyl group; Z is a non-hydrogen substituent that provides an acid-labile moiety; n is from 40 to 90 mol %; m is from 10 to 60 mol %; and the total combined content of the two repeat units in the resin is 80 mol % or more based on all repeat units of the resin;
wherein the photoacid generators are selected from N-hydroxynaphthalimide trifluoromethanesulfonate, N-hydroxynaphthalimide perfluoro-1-butanesulfonate, N-hydroxynaphthalimide camphor-10-sulfonate, N-hydroxynaphthalimide 2-trifluoromethylphenylsulfonate, N-hydroxy-5-norbornene-2,3-dicarboximide perfluoro-1-butanesulfonate, N-(trifluoromethylsulfonyloxy)phthalimide and N-hydroxysuccinimide perfluorobutanesulfonate;
wherein the first quencher is selected from benzotriazole or its derivatives;
wherein the second quencher is selected from N,N-diethyldodecanamide, 2,8-dimethyl-6H,12H-5,11-methanodibenzo[b,f][1,5]diazocine,1,1-dimethylethyl 4-hydroxypiperidine-1-carboxylate and N-allylcaprolactam; and
wherein the solid content of the composition is from 10 to 60 weight %.

2. The radiation-sensitive composition of claim 1 , wherein the composition is sensitive to activating radiation having a wavelength of 365 nm.

3. The radiation-sensitive composition of claim 1 , wherein the resin has a weight average molecular weight of from 10,000 to 30,000 Daltons.

4. The radiation-sensitive composition of claim 1 , wherein the amount of the first quencher is from 0.001 to 1.0 wt % based on the weight of the resin.

5. The radiation-sensitive composition of claim 1 , wherein the amount of the second quencher is from 0.001 to 1.0 wt % based on the weight of the resin.

Assignees

• Rohm & Haas Elect Mat

Inventors

• Haga Mitsuru
• Kushida Shugaku
• Kainuma Kunio
• Cameron James F

Classifications

• H10P14/40

  of conductive or resistive materials · CPC title

• G03F7/0045 Primary

  with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title

• G03F7/40

  Treatment after imagewise removal, e.g. baking · CPC title

• G03F7/004 Primary

  Photosensitive materials (G03F7/12, G03F7/14 take precedence) · CPC title

• G03F7/039

  Macromolecular compounds which are photodegradable, e.g. positive electron resists (G03F7/075 takes precedence; macromolecular quinonediazides G03F7/023) · CPC title