Multi-zone gas distribution plate (GDP) and a method for designing the multi-zone GDP

US10957516B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10957516-B2
Application numberUS-201815997914-A
CountryUS
Kind codeB2
Filing dateJun 5, 2018
Priority dateApr 26, 2016
Publication dateMar 23, 2021
Grant dateMar 23, 2021

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  1. Title

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  2. Abstract

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  4. Key dates

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A multi-zone gas distribution plate (GDP) for high uniformity in plasma-based etching is provided. A housing defines a process chamber and comprises a gas inlet configured to receive a process gas. A GDP is arranged in the process chamber and is configured to distribute the process gas within the process chamber. The GDP comprises a plurality of holes extending through the GDP, and further comprises a plurality of zones into which the holes are grouped. The zones comprise a first zone and a second zone. Holes of the first zone share a first cross-sectional profile and holes of the second zone share a second cross-sectional profile different than the first cross-sectional profile. A method for designing the multi-zone GDP is also provided.

First claim

Opening claim text (preview).

What is claimed is: 1. A plasma-based process tool comprising: a housing defining a process chamber and comprising a gas inlet configured to receive a process gas; and a gas distribution plate (GDP) arranged in the process chamber and configured to distribute the process gas within the process chamber, wherein the GDP defines a plurality of zones, wherein each zone of the plurality of zones is associated with a different cross-sectional hole profile and comprises a plurality of holes extending through the GDP, wherein each hole in a first zone of the plurality of zones individually has a first cross-sectional hole profile, wherein each hole in a second zone of the plurality of zones individually has a second cross-sectional hole profile, wherein the plurality of holes of the first zone includes all holes extending through the GDP at the first zone, wherein the plurality of holes of the second zone includes all holes extending through the GDP at the second zone, wherein the first zone extends circumferentially around a center of the GDP in a clockwise direction from a first angle to a second angle, and wherein the second zone extends circumferentially around the center of the GDP in the clockwise direction from the second angle to a third angle; wherein the first cross-sectional hole profile has a first hole width that is continuous and constant from a topmost surface of the GDP to a surface spaced from and between the topmost surface and a bottommost surface of the GDP and further has a second hole width that is continuous and constant from the surface to the bottommost surface, wherein the second hole width is greater than the first hole width, and wherein the second cross-sectional hole profile has a third hole width that is at the topmost surface of the GDP and that is different than the first hole width. 2. The plasma-based process tool according to claim 1 , wherein each hole in the second zone of the plurality of zones individually increases in width from top to bottom. 3. The plasma-based process tool according to claim 1 , wherein a distance from the topmost surface of the GDP to the surface is about 10-20 times larger than a distance from the surface to the bottommost surface of the GDP. 4. The plasma-based process tool according to claim 1 , wherein the GDP is ring shaped. 5. The plasma-based process tool according to claim 1 , further comprising: a workpiece support arranged in the process chamber, under the GDP; and a showerhead configured to receive the process gas and to direct the process gas into the process chamber through the holes of the GDP. 6. The plasma-based process tool according to claim 5 , further comprising: a spiral inductor spiraling around an upper region of the process chamber and configured to generate plasma using the process gas. 7. The plasma-based process tool according to claim 1 , wherein the first and third angles are the same. 8. The plasma-based process tool according to claim 1 , wherein each hole in a third zone of the plurality of zones individually has a third cross-sectional hole profile, wherein the plurality of holes of the third zone includes all holes extending through the GDP and arranged circumferentially around the center of the GDP in the clockwise direction from the third angle to a fourth angle, and wherein the first and third cross-sectional hole profiles are the same. 9. The plasma-based process tool according to claim 8 , wherein each hole in a fourth zone of the plurality of zones individually has a fourth cross-sectional hole profile, wherein the plurality of holes of the fourth zone includes all holes extending through the GDP and arranged circumferentially around the center of the GDP in the clockwise direction from the fourth angle to the first angle, and wherein the fourth cross-sectional hole profile is different than the first, second, and third cross-sectional hole profiles. 10. A process tool comprising: a multi-zone gas distribution plate (GDP) having a ring shape and defining a plurality of first holes and a plurality of second holes, wherein the first holes are spaced in a first circular ring-shaped path and the second holes are spaced in a second circular ring-shaped path, wherein the first circular ring-shaped path is centered on a center of the GDP and is between and borders an inner sidewall of the GDP and the second circular ring-shaped path, and wherein the second circular ring-shaped path is centered on the center of the GDP and is between and borders an outer sidewall of the GDP and the first circular ring-shaped path; wherein the first and second holes are grouped into a plurality of zones, wherein the zones are circumferentially arranged around the center of the GDP and each has at least two of the first holes and at least two of the second holes, wherein the plurality of zones comprises a first zone, a second zone, and a third zone, wherein the first zone comprises first and second holes circumferentially around the center of the GDP in a clockwise direction from a first angle to a second angle, wherein the second zone comprises first and second holes circumferentially around the center of the GDP in the clockwise direction from the second angle to a third angle, wherein the third zone comprises first and second holes circumferentially around the center of the GDP in the clockwise direction from the third angle to a fourth angle, wherein the first and second holes of the first zone each individually have a first cross-sectional profile, wherein the first and second holes of the second zone each individually have a second cross-sectional profile, wherein the first and second holes of the third zone each individually have a third cross-sectional profile, and wherein the first, second, and third cross-sectional profiles are different at a topmost surface of the GDP and also at a bottommost surface of the GDP. 11. The process tool according to claim 10 , wherein the first cross-sectional profile discretely increases in width from top to bottom. 12. The process tool according to claim 10 , wherein the plurality of first holes comprises a hole fully defined by a pair of first opposing sidewall segments and a pair of second opposing sidewall segments, and wherein the first opposing sidewall segments are arranged end to end respectively with the second opposing sidewall segments. 13. The process tool according to claim 12 , wherein the first opposing sidewall segments have a first separation that is constant from top to bottom, wherein the second opposing sidewall segments have a second separation that is constant from top to bottom, and wherein the first and second separations are different. 14. The process tool according to claim 10 , further comprising: a housing defining a process chamber and comprising a gas inlet configured to receive a process gas, wherein the multi-zone GDP is in the process chamber; a workpiece support in the process chamber, under the multi-zone GDP; and a showerhead configured to receive the process gas and to direct the process gas into the process chamber through the pluralities of first and second holes defined by the multi-zone GDP. 15. The process tool according to claim 10 , wherein the plurality of zones comprises a fourth zone, wherein the fourth zone comprises first and second holes circumferentially around the center of the GDP in the clockwise direction from the fourth angle to the first angle, and wherein the first and second holes of the fourth zone each individually have the second cross-sectional profile. 16. The process tool according to claim 10 , wherein the second circular ring-s

Assignees

Inventors

Classifications

  • of organic photoresist masks · CPC title

  • Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

  • characterised by their composition, e.g. multilayer masks or materials · CPC title

  • of Group IV materials · CPC title

  • Manufacture or treatment · CPC title

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What does patent US10957516B2 cover?
A multi-zone gas distribution plate (GDP) for high uniformity in plasma-based etching is provided. A housing defines a process chamber and comprises a gas inlet configured to receive a process gas. A GDP is arranged in the process chamber and is configured to distribute the process gas within the process chamber. The GDP comprises a plurality of holes extending through the GDP, and further comp…
Who is the assignee on this patent?
Taiwan Semiconductor Mfg Co Ltd
What technology area does this patent fall under?
Primary CPC classification H01J37/3244. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Mar 23 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).