Chemical mechanical polishing composition and method of polishing silicon nitride over silicon dioxide and simultaneously inhibiting damage to silicon dioxide

Patent metadata

Field	Value
Publication number	US-10954411-B2
Application number	US-201916413928-A
Country	US
Kind code	B2
Filing date	May 16, 2019
Priority date	May 16, 2019
Publication date	Mar 23, 2021
Grant date	Mar 23, 2021

Abstract

An acid chemical mechanical polishing composition polishes silicon nitride over silicon dioxide and simultaneously inhibits damage to the silicon dioxide. The acid chemical mechanical polishing composition includes polyvinylpyrrolidone polymers, anionic functional colloidal silica abrasive particles and an amine carboxylic acid. The pH of the acid chemical mechanical polishing composition is 5 or less.

First claim

What is claimed is:

1. An acid chemical mechanical polishing composition, consisting of:
water;
anionic functional colloidal silica abrasive particles;
a polyvinylpyrrolidone polymer;
an amine carboxylic acid selected from the group consisting of nicotinic acid and picolinic acid;

optionally an anionic surfactant;
optionally a biocide; and,
wherein a pH of the acid chemical mechanical polishing composition is 5 or less.

2. The chemical mechanical polishing composition of claim 1 , wherein the chemical mechanical polishing composition consists of:
the water;
the anionic functional colloidal silica abrasive particles;
the polyvinylpyrrolidone polymer, wherein the polyvinylpyrrolidone polymer has a
weight average molecular weight of 1000 or greater;
the amine carboxylic acid selected from the group consisting of nicotinic acid and
picolinic acid;
optionally, the anionic surfactant;
a biocide; and
wherein the pH of the chemical mechanical polishing composition is from 2-5.

3. The chemical mechanical polishing composition of claim 2 , wherein the chemical mechanical polishing composition consists of:
the water;
0.1 wt % to 10 wt % of the anionic functional colloidal silica abrasive particles; 0.001 wt % or greater of the polyvinylpyrrolidone polymer, wherein the polyvinylpyrrolidone polymer has a weight average molecular weight of 3000 to 500,000;

the amine carboxylic acid selected from the group consisting of nicotinic acid, and picolinic acid, wherein the amine carboxylic acid has an isoelectric point of less than 5;
the anionic surfactant;
the biocide; and
wherein the pH of the chemical mechanical polishing composition is from 3-5.

4. The chemical mechanical polishing composition of claim 3 , wherein the chemical mechanical polishing compositions consists of:
the water;

0.5 wt % to 5 wt % of the anionic functional colloidal silica abrasive particles;
0.005 wt % to 0.25 wt % of the polyvinylpyrrolidone polymer, wherein the polyvinylpyrrolidone polymer has a weight average molecular weight of 3500 to 360,000;
0.01 wt % or greater of the amine carboxylic acid selected from the group consisting of nicotinic acid and picolinic acid, wherein the amine carboxylic acid has an isoelectric point of less than 5;
0.001 wt % or greater of the anionic surfactant;
0.001 wt % to 0.1 wt % of the biocide; and
wherein the pH of the chemical mechanical polishing composition is from 3-4.

5. A method for chemical mechanical polishing of a substrate, comprising:
providing a substrate, wherein the substrate comprises silicon nitride and silicon dioxide;
providing an acid chemical mechanical polishing composition consisting of:
water;
anionic functional colloidal silica abrasive particles;
a polyvinylpyrrolidone polymer;
an amine carboxylic acid selected from the group consisting of nicotinic acid and picolinic acid;

optionally, an anionic surfactant;
optionally, a biocide; and,
wherein a pH of the chemical mechanical polishing composition is 5 or less; and
providing a chemical mechanical polishing pad with a polishing surface;
creating dynamic contact at an interface between the polishing surface of the chemical mechanical polishing pad and the substrate with a down force of 20.7 kPa; and
dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate;
wherein the substrate is polished; and, wherein silicon nitride is selectively removed over silicon dioxide from the substrate.

6. The method of claim 5 , wherein the chemical mechanical polishing composition provided consists of:
water;
the anionic functional colloidal silica abrasive particles;
the polyvinylpyrrolidone polymer, wherein the polyvinylpyrrolidone polymer has a weight average molecular weight of 1000 or greater;
the amine carboxylic acid selected from the group consisting of nicotinic acid and picolinic acid;

optionally, the anionic surfactant;
a biocide; and
wherein the pH of the chemical mechanical polishing composition is from 2-5; and
providing the chemical mechanical polishing pad with the polishing surface;
creating dynamic contact at the interface between the polishing surface of the chemical mechanical polishing pad and the substrate with a down force of 20.7 kPa; and
dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate;
wherein the substrate is polished; and, wherein silicon nitride is selectively removed over silicon dioxide from the substrate.

7. The method of claim 6 , wherein the chemical mechanical polishing composition consists of:
water;

0.1 wt % to 10 wt % of the anionic functional colloidal silica abrasive particles;
0.001 wt % or greater of the polyvinylpyrrolidone polymer, wherein the polyvinylpyrrolidone polymer has a weight average molecular weight of 3000 to 500,000;
the amine carboxylic acid selected from the group consisting of nicotinic acid and picolinic acid, wherein the amine carboxylic acid has an isoelectric point of less than 5;
the anionic surfactant;
the biocide; and
wherein the pH of the chemical mechanical polishing composition is from 3-5; and
providing the chemical mechanical polishing pad with the polishing surface;
creating dynamic contact at the interface between the polishing surface of the chemical mechanical polishing pad and the substrate with a down force of 20.7 kPa; and
dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate;
wherein the substrate is polished; and, wherein silicon nitride is selectively removed over silicon dioxide from the substrate.

8. The method of claim 7 , wherein the chemical mechanical polishing composition consists of:
water;
0.5 wt % to 5 wt % of the anionic functional colloidal silica abrasive particles;
0.005 wt % to 0.25 wt % of the polyvinylpyrrolidone polymer, wherein the polyvinylpyrrolidone polymer has a weight average molecular weight of 3500 to 360,000;
0.01 wt % or greater of the amine carboxylic acid selected from the group consisting of nicotinic acid and picolinic acid, wherein the amine carboxylic acid has an isoelectric point of less than 5;
0.001 wt % or greater of the anionic surfactant;
0.001 wt % to 0.1 wt % of the biocide; and
wherein the pH of the chemical mechanical polishing composition is from 3-4; and
providing the chemical mechanical polishing pad with the polishing surface;
creating dynamic contact at the interface between the polishing surface of the chemical mechanical polishing pad and the substrate with a down force of 20.7 kPa; and
dispensing the chemical mechanical polishing composition onto the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate;
wherein the substrate is polished; and, wherein silicon nitride is selectively removed over silicon dioxide from the substrate.

Assignees

• Rohm & Haas Elect Materials Cmp Holdings Inc
• Rohm And Haas Electronic Mat Cmp Holdings

Inventors

• Penta Naresh Kumar
• Tettey Kwadwo E
• Van Hanehem Matthew

Classifications

• H10P95/064

  the removal being chemical etching · CPC title

• H10P95/062

  involving a dielectric removal step · CPC title

• H10P95/06

  Planarisation of inorganic insulating materials · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• C09K3/1463

  Aqueous liquid suspensions · CPC title