Chemical mechanical planarization slurry composition comprising composite particles, process for removing material using said composition, CMP polishing pad and process for preparing said composition

Patent metadata

Field	Value
Publication number	US-9725621-B2
Application number	US-201414787989-A
Country	US
Kind code	B2
Filing date	Apr 30, 2014
Priority date	May 3, 2013
Publication date	Aug 8, 2017
Grant date	Aug 8, 2017

Abstract

CMP processes, tools and slurries utilize composite particles that include core particles having organosilica particles disposed about the core particles. Using these processes, tools and slurries can enhance removal rates, reduce defectivity and increase cleanability with respect to comparable systems and substrates.

First claim

The invention claimed is:

1. A process for removing material from a substrate
through chemical and abrasive actions, the process comprising:

removing material from a substrate with a polishing pad or slurry composition, wherein the polishing pad, or the slurry composition, or both comprise composite particles comprising core particles having organosilica particles disposed about the core particles, wherein the organosilica particles have a molar ratio of C to Si of 0.5 or greater.

2. The process of claim 1 , wherein the core particles comprise an inorganic material, an organic material, or both.

3. The process of claim 1 , wherein the organosilica particles are derived via reaction of an organosilane compound having the formula R 1 SiR 2 3 , wherein R 1 is C 1 -C 4 alkyl, C 2 -C 4 alkenyl, or C 2 -C 4 alkynyl and wherein R 2 is alkoxy, chloro, bromo, or iodo.

4. The process of claim 1 , wherein the composite particles have a roundness R of from 1.1 to 2.0, wherein the roundness is determined by the formula: R=P 2 /(4πS) wherein P is the perimeter of a cross-section of the particle and wherein S is the cross-sectional area of the particle.

5. A CMP slurry composition comprising composite particles comprising core particles having organosilica particles disposed about the core particles dispersed in an aqueous media, wherein the organosilica particles have a molar ratio of C to Si of 0.5 or greater.

6. The CMP slurry composition of claim 5 , wherein core particles include an inorganic material, an organic material, or both.

7. The CMP slurry composition of claim 5 , wherein the CMP slurry composition further comprises a surfactant, a rheological agent, a corrosion inhibitor, an oxidizing agent, a chelating agent, a complexing agent, particles other than the metal oxide-polymer composite particles, or any combination thereof.

8. The CMP slurry composition of claim 5 , wherein the composite particles further comprise one or more ingredients selected from the group consisting of a CMP chemical etchant, a CMP processing accelerator, and a CMP passivating agent.

9. The CMP slurry composition of claim 5 , wherein the core particles comprise an organic material.

10. The CMP slurry composition of claim 5 , wherein the organosilica particles are derived via reaction of an organosilane compound having the formula R 1 SiR 2 3 , wherein R 1 is C 1 -C 4 alkyl, C 2 -C 4 alkenyl, or C 2 -C 4 alkynyl and wherein R 2 is alkoxy, chloro, bromo, or iodo.

11. The CMP slurry composition of claim 10 , wherein the organosilane compound has a formula: R 1 SiR 2 3 , wherein R 1 is C 1 -C 4 alkyl, C 2 -C 4 alkenyl, or C 2 -C 4 alkynyl and wherein R 2 is alkoxy, chloro, bromo, or iodo.

12. The CMP slurry composition of claim 5 , wherein the composite particles have a roundness R of from 1.1 to 2.0, wherein the roundness is determined by the formula: R=P 2 /(4πS) wherein P is the perimeter of a cross-section of the particle and wherein S is the cross-sectional area of the particle.

13. A CMP polishing pad comprising composite particles comprising core particles having organosilica particles disposed about the core particles, wherein the organosilica particles have a molar ratio of C to Si of 0.5 or greater.

14. The CMP polishing pad of claim 13 , wherein the core particles comprise an inorganic material, an organic material, or both.

15. The CMP polishing pad of claim 13 , wherein the organosilica particles are derived via reaction of an organosilane compound having the formula R 1 SiR 2 3 , wherein R 1 is C 1 -C 4 alkyl, C 2 -C 4 alkenyl, or C 2 -C 4 alkynyl and wherein R 2 is alkoxy, chloro, bromo, or iodo.

16. The CMP polishing pad of claim 13 , wherein the composite particles have a roundness R of from 1.1 to 2.0, wherein the roundness is determined by the formula: R=P 2 /(4πS) wherein P is the perimeter of a cross-section of the particle and wherein S is the cross-sectional area of the particle.

17. A process for preparing a composition for CMP comprising:
preparing composite particles by:
(a) providing an aqueous dispersion comprising polymer particles and a surface agent, the aqueous dispersion having a pH of 8 or more,
(b) adding an aqueous mixture comprising an at least partially hydrolyzed organosilane compound to the aqueous dispersion to form a mixture, wherein the organosilane compound has a formula: R 1 SiR 2 3 , wherein R 1 is C 1 -C 4 alkyl, C 2 -C 4 alkenyl, or C 2 -C 4 alkynyl and wherein R 2 is alkoxy, chloro, bromo, or iodo, and
(c) forming the aqueous dispersion of composite particles via production of organosilica particles by a reaction of the at least partially hydrolyzed organosilane compound, wherein the organosilica particles have a molar ratio of C to Si of 0.5 or greater; and
formulating the composite particles into a composition for CM′.

18. The method of claim 17 , wherein providing comprises adjusting the pH of an aqueous dispersion comprising polymer particles and a surface agent to a pH of 8 or more.

19. The method of claim 17 , wherein providing comprises combining an aqueous dispersion of polymer particles with an ethylenically unsaturated monomer, allowing the monomer to migrate into the polymer particles, and polymerizing the monomer.

20. The method of claim 17 , wherein providing comprises dissolving a polymer in solvent, adding water to form an oil in water emulsion, and distilling the solvent from the emulsion to form an aqueous dispersion of polymer particles.

21. The method of claim 20 , wherein dissolving comprises dissolving the polymer and an ethylenically unsaturated monomer, the surface agent, or both in the solvent.

22. The method of claim 20 , further comprising adding the surface agent to the aqueous dispersion after distilling the solvent.

23. The method of claim 20 , further comprising, after distilling, adding an ethylenically unsaturated monomer to the emulsion, allowing the monomer to migrate into the polymer particles, and polymerizing the monomer.

24. The method of claim 22 , further comprising polymerizing the surface agent.

25. The process of claim 17 , wherein the surface agent comprises a polyethylene glycol-based polymer, quaternary amine-based organic compound, polyvinylpyrrolidone- or polypyrrolidone-based surfactant, or an anionic surfactant with a sulfate anionic component.

26. The process of claim 17 , wherein the surface agent comprises SiH 3-x R 3 x R 4 Q, where x is 1, 2, or 3, R 3 is alkoxy, chloro, bromo, or iodo, R 4 is C 3 -C 22 branched or unbranched alkylene or alkenylene or aromatic group and optionally includes an ether, ester, or amine linkage, and Q is H, Cl, Br, F, hydroxyl, carboxylic acid, epoxy, amine, or a substituted or unsubstituted vinyl, acrylate, or methacrylate.

27. The process of claim 17 , wherein the aqueous dispersion in any step further comprises an ethylenically unsaturated monomer.

28. The process of claim 27 , wherein the process further comprises a step of crosslinking the ethylenically unsaturated monomer to crosslink the polymer particles.

Assignees

• Cabot Corp

Inventors

• Zhang Qingling
• Greenwood Bennett
• Sharma Ravi
• Moeser Geoffrey D
• Prevo Brian G
• Hampden-Smith Mark J

Classifications

• C09K3/1463

  Aqueous liquid suspensions · CPC title

• B24B37/044

  characterised by the composition of the lapping agent · CPC title

• C09K3/1409

  Abrasive particles per se (preparation of diamond C01B32/25) · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title