Method of cleaning substrate processing apparatus and system of cleaning substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-10950465-B2
Application number	US-201715826074-A
Country	US
Kind code	B2
Filing date	Nov 29, 2017
Priority date	Dec 2, 2016
Publication date	Mar 16, 2021
Grant date	Mar 16, 2021

Abstract

Disclosed is a method of cleaning a substrate processing apparatus in which a substrate having a surface wet by a liquid is brought into contact with a supercritical fluid so as to perform a drying process of drying the substrate. The method includes a cleaning gas filling process and an exhausting process. The cleaning gas filling process fills a cleaning gas containing isopropyl alcohol in the substrate processing apparatus. The exhausting process exhausts the cleaning gas from an inside of the substrate processing apparatus after the cleaning gas filling process.

First claim

What is claimed is:

1. A method of cleaning a substrate processing apparatus comprising:
carrying a substrate into a chamber of the substrate processing apparatus with a substrate holder;
drying the substrate having a surface wet by a cleaning liquid brought into contact with a supercritical fluid in the chamber of the substrate processing apparatus;
a first vaporizing to vaporize the supercritical fluid into a supercritical gas;
a first exhausting to remove the supercritical gas from an inside of the chamber of the substrate processing apparatus;
carrying a jig only filled with the cleaning liquid into the chamber of the substrate processing apparatus with the substrate holder via a disc portion of the jig, the disc portion of the jig being configured to be held by the substrate holder by having a diameter and a thickness substantially equal to a diameter and a thickness of the substrate and the cleaning liquid being held in a ring-shaped portion of the jig protruding in a ring shape from a main surface of the disk portion;
a second vaporizing to vaporize the cleaning liquid on the jig into a cleaning gas within the chamber of the substrate processing apparatus after the carrying;
filling the inside of the chamber of the substrate processing apparatus with the cleaning gas; and
a second exhausting to remove the cleaning gas formed in the second vaporizing from the inside of the chamber of the substrate processing apparatus after the filling and after a predetermined time.

2. The method of claim 1 , wherein the cleaning liquid contains isopropyl alcohol.

3. The method of claim 1 , wherein the supercritical fluid contains carbon dioxide.

4. A system for cleaning a substrate processing apparatus comprising:
a memory; and
a processor coupled to the memory and configured to:
carry a substrate into a chamber of the substrate processing apparatus with a substrate holder;
dry the substrate having a surface wet by a cleaning liquid brought into contact with a supercritical fluid in the chamber of the substrate processing apparatus;
first vaporize the supercritical fluid into a supercritical gas;
first exhaust the supercritical gas from an inside of the chamber of the substrate processing apparatus;
carry a jig only filled with the cleaning liquid containing isopropyl alcohol into the chamber of the substrate processing apparatus with the substrate holder;
second vaporize the cleaning liquid into a cleaning gas containing isopropyl alcohol within the chamber of the substrate processing apparatus after the jig is carried;
fill the inside of the chamber of the substrate processing apparatus with the cleaning gas; and
second exhaust the cleaning gas formed in the second vaporize from the inside of the chamber of the substrate processing apparatus after a predetermined time,
wherein the jig includes:
a disk portion configured to be held by the substrate holder by having a diameter and a thickness substantially equal to a diameter and a thickness of the substrate; and
a ring-shaped portion protruding in a ring shape from a main surface of the disk portion.

5. The method of claim 1 , wherein the cleaning gas filling the inside of the chamber of the substrate processing apparatus is configured to absorb particles that are floating in and adhering to the chamber of the substrate processing apparatus as a result of the drying.

6. The method of claim 1 further comprising:
filling the jig with the cleaning liquid outside the chamber of the substrate processing apparatus prior to the carrying of the jig into the chamber of the substrate processing apparatus.

7. The method of claim 1 , wherein a time for the vaporizing is longer than a time for the drying.

Assignees

• Tokyo Electron Ltd

Inventors

• Kitayama Shotaro
• Goshi Gentaro
• Ohno Hiroki
• Egashira Keisuke
• Kawabuchi Yosuke
• Marumoto Hiroshi
• Masuzumi Takuro
• Tsukano Kento
• Kiyose Hiromi

Classifications

• H10P72/0408 Primary

  for drying · CPC title

• H10P70/80

  Cleaning only by supercritical fluids · CPC title

• B08B9/00 Primary

  Cleaning hollow articles by methods or apparatus specially adapted thereto · CPC title

• B08B2203/0229

  Suction chambers for aspirating the sprayed liquid · CPC title

• C11D7/261

  Alcohols; Phenols · CPC title