Dynamic imaging system

Patent metadata

Field	Value
Publication number	US-10948834-B2
Application number	US-202016917278-A
Country	US
Kind code	B2
Filing date	Jun 30, 2020
Priority date	Jul 10, 2018
Publication date	Mar 16, 2021
Grant date	Mar 16, 2021

Abstract

Embodiments described provide dynamic imaging systems that compensates for pattern defects resulting from distortion caused by warpage of the substrate. The methods and apparatus described are useful to create compensated exposure patterns. The dynamic imaging system includes an inspection system configured to provide 3D profile measurements and die shift measurements of the first substrate to the interface configured to provide compensated pattern data to the digital lithography system configured to receive the compensated pattern data from the interface and expose the photoresist with a compensated pattern.

First claim

What is claimed is:

1. A method of creating compensated exposure patterns, comprising:
disposing a substrate on a stage of a dynamic imaging system, wherein the dynamic imaging system comprises:
a slab with the stage disposed thereover;
a digital lithography system disposed over the slab; and
an inspection system;

moving the stage under the inspection system to position a first area of the substrate under the inspection system;
measuring a three-dimensional (3D) profile of the first area of the substrate using the inspection system;
measuring a die-shift of at least one die in the first area of the substrate using the inspection system;
providing the 3D profile measurements and the die-shift measurements to an interface of the dynamic imaging system, wherein a distributor sequences the 3D profile measurements and the die-shift measurements;
determining a compensated pattern data for the first area of the substrate within the interface, wherein the compensated pattern data compensates for a warpage and the die shift on the substrate; and
exposing a portion of the first area of the substrate to a compensated pattern using the digital lithography system, wherein the compensated pattern is determined from the compensated pattern data.

2. The method of claim 1 , wherein the measuring the 3D profile of the first area of the substrate and the measuring the die-shift of the at least one die of the first area of the substrate using the inspection system are repeated for successive areas of the substrate until 3D profile measurements and die-shift measurements along a length of the substrate have been taken.

3. The method of claim 2 , wherein the exposing the portion of the first area of the substrate to the compensated pattern is performed subsequent to the measuring of the 3D profile of the successive areas of the substrate and the measuring of the die-shift of the successive areas of the substrate.

4. The method of claim 1 , further comprising measuring a second 3D profile and a second die-shift of a second area of the substrate using the inspection system as the first area of the substrate is being exposed by the digital lithography system.

5. The method of claim 4 , wherein the digital lithography system determines the completion of the exposing of the first area of the substrate.

6. The method of claim 1 , wherein the compensated pattern data is sent to the digital lithography system.

7. The method of claim 1 , wherein the 3D profile measurements are performed before the die-shift measurements.

8. The method of claim 1 , wherein the interface overwrites an exposure pattern data with the compensated pattern data.

9. The method of claim 1 , wherein the measuring the 3D profile is performed by a warpage inspection tool of the inspection system, the measuring the die-shift is performed by a die-shift inspection tool of the inspection system, the inspection system further comprises an opening beneath the inspection system for the stage to pass thereunder, and the digital lithography system further comprises a digital lithography system opening for the stage to pass thereunder.

10. The method of claim 9 , wherein the warpage inspection tool further comprises one or more warpage inspection modules which each measure a 3D profile of the first area of the substrate and the die-shift inspection tool further comprises one or more die-shift inspection modules which each measure the die-shift of at least one die of the first area of the substrate without exposing a photoresist disposed on the first area.

11. A method of creating compensated exposure patterns, comprising:
measuring a location of a substrate with a photoresist disposed thereon;
moving an area of the substrate beneath an inspection system;
measuring a 3D profile of the area of the substrate using a warpage inspection tool within the inspection system;
measuring a die-shift of at least one die in the area of the substrate using a die-shift inspection tool within the inspection system;
providing the location of the substrate to an interface;
providing the 3D profile measurements to the interface;
providing the die-shift measurements to the interface, wherein a distributor sequences the 3D profile measurements and the die-shift measurements;
determining a compensated pattern data for the area of the substrate within the interface, which compensates for a warpage and the die shift on the substrate;
sending the compensated pattern data to a digital lithography system as a compensated pattern; and
exposing the photoresist on the substrate to the compensated pattern using the digital lithography system.

12. The method of claim 11 , wherein the measuring of the location of the substrate is provided to the interface by an encoder.

13. The method of claim 11 , wherein the interface overwrites an exposure pattern data with compensated pattern data.

14. The method of claim 11 , wherein the 3D profile measurements comprise a difference in distance between an expected distance of the substrate from the inspection system and an actual distance of the substrate from the inspection system across discreet lengths and a full width of the substrate.

15. The method of claim 14 , wherein die-shift measurements comprise a difference in expected coordinates of at least one die based on a global die-shift grid and actual coordinates of the at least one die.

16. A method of creating compensated exposure patterns, comprising:
measuring a location of a first substrate with a first photoresist disposed thereon using a first encoder;
moving an area of the first substrate beneath an inspection system;
measuring a 3D profile of the area of the first substrate using a warpage inspection tool within the inspection system, wherein the warpage inspection tool comprises one or more laser triangulation modules;
measuring a die-shift of at least one die in the area of the first substrate using a die-shift inspection tool within the inspection system without exposing the first photoresist, wherein the die-shift inspection tool comprises one or more automated optical inspection (AOI) modules;
providing the location of the first substrate to an interface;
providing the 3D profile measurements to the interface;
providing the die-shift measurements to the interface, wherein a distributor sequences the 3D profile measurements and the die-shift measurements;
determining a compensated pattern data for the area of the first substrate within the interface, which compensates for a warpage and the die shift on the first substrate; and
exposing the first photoresist on the first substrate to a compensated pattern using a digital lithography system, wherein the compensated pattern is determined using the compensated pattern data.

17. The method of claim 16 , further comprising a second substrate with a second photoresist disposed thereon, wherein
a second encoder measures a location of the second substrate;
the inspection system measures 3D profiles of areas of the second substrate;
the die-shift inspection tool measures a die-shift of at least one die of a plurality of dies without exposing the photoresist disposed on the areas of the second substrate; and
the inspection system provides the 3D profiles of the areas of the second substrate and the die-shift of at least one die to the interface, where at least one of warpage and die-shift is measured into the compensated pattern data and provided to the digital lithography system to expose the photoresist disposed on the areas of the second substrate in a digital lithography process with the com

Assignees

• Applied Materials Inc

Inventors

• Chen Ching-Chang
• Lai Chien-Hua
• Chen Wei-Chung
• Kuo Shih-Hao
• Wang Hsiu-Jen

Classifications

• H10P72/0606

  Position monitoring, e.g. misposition detection or presence detection · CPC title

• H10P76/2041

  Photolithographic processes · CPC title

• G03F9/7003

  Alignment type or strategy, e.g. leveling, global alignment · CPC title

• G03F7/70508 Primary

  Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus · CPC title

• G03F7/703

  Non-planar pattern areas or non-planar masks, e.g. curved masks or substrates · CPC title