Apparatus and method for electrodeposition of metals with the use of an ionically resistive ionically permeable element having spatially tailored resistivity

Patent metadata

Field	Value
Publication number	US-10923340-B2
Application number	US-201815995974-A
Country	US
Kind code	B2
Filing date	Jun 1, 2018
Priority date	May 14, 2015
Publication date	Feb 16, 2021
Grant date	Feb 16, 2021

Abstract

An apparatus for electroplating metal on a semiconductor substrate with improved plating uniformity includes in one aspect: a plating chamber configured to contain an electrolyte and an anode; a substrate holder configured to hold the semiconductor substrate; and an ionically resistive ionically permeable element comprising a substantially planar substrate-facing surface and an opposing surface, wherein the element allows for flow of ionic current towards the substrate during electroplating, and wherein the element comprises a region having varied local resistivity. In one example the resistivity of the element is varied by varying the thickness of the element. In some embodiments the thickness of the element is gradually reduced in a radial direction from the edge of the element to the center of the element. The provided apparatus and methods are particularly useful for electroplating metal in WLP recessed features.

First claim

The invention claimed is:

1. An ionically resistive ionically permeable element for use in electrochemical processing of substrates, wherein the element allows for flow of ionic current through the element during electrochemical processing, and wherein the element comprises a region having gradually varied local resistivity.

2. The ionically resistive ionically permeable element of claim 1 , wherein the region having gradually varied local resistivity is coextensive with the element and wherein the local resistivity in said region decreases radially from an edge of the element to the center of the element.

3. The ionically resistive ionically permeable element of claim 1 , wherein the element comprises a region of constant local resistivity surrounding the region of gradually varied local resistivity, wherein the region of gradually varied local resistivity is located in a central portion of the element and wherein the local resistivity in the region of gradually varied local resistivity decreases radially from an interface with the region of constant local resistivity to the center of the element.

4. The ionically resistive ionically permeable element of claim 1 , wherein the element has a gradually varied thickness and constant porosity in the region having gradually varied local resistivity.

5. The ionically resistive ionically permeable element of claim 1 , wherein the element has a gradually varied porosity and constant thickness in the region having gradually varied local resistivity.

6. The ionically resistive ionically permeable element of claim 1 , wherein the element has both gradually varied porosity and gradually varied thickness in the region having gradually varied local resistivity.

7. The ionically resistive ionically permeable element of claim 1 , wherein the element has a plurality of non-communicating channels made through an ionically resistive material and connecting a first surface of the element with the opposite surface of the element, wherein the element allows for movement of the electrolyte through the channels.

8. The ionically resistive ionically permeable element of claim 7 , wherein the region having gradually varied local resistivity has a gradually varied density of the non-communicating channels.

9. The ionically resistive ionically permeable element of claim 7 , wherein the region having gradually varied local resistivity has a gradual variation in diameter of the non-communicating channels.

10. The ionically resistive ionically permeable element of claim 7 , wherein the region having gradually varied local resistivity has a gradual variation in an incline angle of the non-communicating channels relative to a plane defined by the first surface of the element.

11. The ionically resistive ionically permeable element of claim 1 , wherein the region having gradually varied local resistivity is coextensive with the element and wherein the local resistivity in said region decreases radially from an edge of the element to the center of the element due to gradually decreasing thickness of the element from the edge of the element to the center of the element.

12. The ionically resistive ionically permeable element of claim 11 , wherein the element has a convex surface that follows a second order polynomial function, when viewed in a radial cross-section.

13. The ionically resistive ionically permeable element of claim 1 , wherein the element comprises a region of constant thickness surrounding the region having gradually varied local resistivity, wherein the region having gradually varied local resistivity is located in a central portion of the element and wherein the thickness of the element in the region having gradually varied local resistivity decreases radially from an interface with the region of constant thickness to the center of the element.

14. The ionically resistive ionically permeable element of claim 1 , wherein the element has a variable thickness, and wherein the thickness variation is between about 3-100% of the greatest thickness of the element.

15. A method of electroplating metal on a semiconductor substrate comprising a plurality of recessed features, the method comprising:
(a) providing the substrate to a plating chamber configured to contain an electrolyte and an anode while electroplating metal onto the substrate, wherein the plating chamber includes:
(i) a substrate holder holding the substrate such that a plating face of the substrate is separated from the anode during electroplating, and
(ii) an ionically resistive ionically permeable element, wherein the element allows for flow of ionic current through the element towards the substrate during electroplating, and wherein the element comprises a region having gradually varied local resistivity, and

(b) electroplating a metal onto the substrate plating surface while cathodically biasing and rotating the semiconductor substrate.

16. The method of claim 15 , wherein the element comprises a region of constant local resistivity surrounding the region of gradually varied local resistivity, wherein the region of gradually varied local resistivity is located in a central portion of the element and wherein the local resistivity in the region of gradually varied local resistivity decreases radially from an interface with the region of constant local resistivity to the center of the element.

17. An electroplating apparatus comprising:
(a) a plating chamber configured to contain an electrolyte and an anode while electroplating metal onto a semiconductor substrate;
(b) a substrate holder configured to hold the semiconductor substrate such that a plating face of the substrate is separated from the anode during electroplating;
(c) an ionically resistive ionically permeable element, wherein the element allows for flow of an ionic current through the element towards the substrate during electroplating, and wherein the element comprises an azimuthally asymmetric ionically permeable region having an average resistivity that is different from the average resistivity of the rest of the element, wherein said region is located at a periphery of the element and has an area of at least 0.35% of the total area of a substrate-facing surface of the element.

18. The apparatus of claim 17 , wherein the azimuthally asymmetric ionically permeable region having an average resistivity that is different from the average resistivity of the rest of the element has a different average porosity from the rest of the element.

19. The apparatus of claim 17 , wherein the azimuthally asymmetric ionically permeable region having an average resistivity that is different from the average resistivity of the rest of the element has a different average thickness from the rest of the element.

20. The apparatus of claim 17 , wherein the azimuthally asymmetric ionically permeable region having an average resistivity that is different from the average resistivity has a greater average resistivity than the rest of the element.

21. A method of electroplating a metal on a semiconductor substrate while controlling azimuthal uniformity, the method comprising:
(a) providing the semiconductor substrate into an electroplating apparatus of claim 17 ; and
(b) electroplating the metal on the substrate while rotating the substrate relative to the ionically resistive ionically permeable element such that a selected portion of the substrate at a selected azimuthal position dwells proximate the azimuthally asymmetric ionically permeable region having an average resistivit

Assignees

• Lam Res Corp

Inventors

• Kagajwala Burhanuddin
• Buckalew Bryan L
• Chua Lee Peng
• Berke Aaron
• Rash Robert
• Mayer Steven T

Classifications

• H10P14/47

  Electrolytic deposition, i.e. electroplating; Electroless plating · CPC title

• H10P90/00 Primary

  Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement · CPC title

• H10P72/0421

  for drying etching · CPC title

• H10P72/0418

  for etching · CPC title

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title