Anisotropic high resistance ionic current source (AHRICS)

Patent metadata

Field	Value
Publication number	US-10301739-B2
Application number	US-201715583592-A
Country	US
Kind code	B2
Filing date	May 1, 2017
Priority date	May 1, 2013
Publication date	May 28, 2019
Grant date	May 28, 2019

Abstract

An electroplating apparatus that promotes uniform electroplating on the substrates having thin seed layers includes a convex anisotropic high resistance ionic current source (AHRICS), such as an electrolyte-permeable resistive domed plate. The AHRICS is positioned in close proximity of the substrate, so that a distance from the central portion of the AHRICS to the substrate is smaller than the distance from the edge portion of the AHRICS to the substrate. The apparatus further includes a plating chamber configured to hold the electrolyte and an anode. The apparatus further includes a substrate holder configured to hold the substrate. In some embodiments, the apparatus further includes a secondary (thief) cathode configured to divert ionic current from the near-edge region of the substrate.

First claim

The invention claimed is:

1. An electroplating apparatus comprising:
(a) a plating chamber configured to contain an electrolyte and an anode while electroplating metal onto a substantially planar substrate;
(b) a substrate holder configured to hold the substantially planar substrate such that a plating face of the substrate is separated from the anode during electroplating; and
(c) an anisotropic high resistance ionic current source (AHRICS) having an edge region and a central region and comprising a substrate-facing surface having a shape that provides a smaller distance to the substrate from the edge region than from the central region during electroplating.

2. The apparatus of claim 1 , wherein the AHRICS comprises an ionically resistive material with a plurality of channels made through said material, wherein said channels allow for transport of the electrolyte through the AHRICS.

3. The apparatus of claim 2 , wherein the channels are not fluidically connected within the body of the AHRICS.

4. The apparatus of claim 1 , wherein the thickness of the AHRICS is substantially the same in the central region and in the edge region.

5. The apparatus of claim 1 , wherein the substrate-facing surface of the AHRICS follows a parabolic function from the edge region to the central region, when viewed in cross-section.

6. The apparatus of claim 1 , wherein the substrate-facing surface of the AHRICS follows a linear function from the edge region to the central region, when viewed in cross-section.

7. The apparatus of claim 1 , wherein the substrate-facing surface of the AHRICS follows both a linear function and parabolic function at different portions of the substrate-facing surface from the edge region to the central region, when viewed in cross-section.

8. The apparatus of claim 1 , wherein the substrate-facing surface of the AHRICS follows a polynomial function from the edge region to the central region, when viewed in cross-section.

9. The apparatus of claim 1 , wherein the AHRICS is made of an ionically resistive material, and comprises between about 1,000-25,000 non-communicating channels made within the ionically resistive material.

10. The apparatus of claim 1 , wherein the AHRICS is made of an ionically resistive material comprising a plurality of channels, wherein the diameter of each channel is not greater than the closest distance between the substrate and the AHRICS.

11. The apparatus of claim 1 , further comprising one or more ionically resistive ionically permeable plates stacked with the AHRICS.

12. The apparatus of claim 1 , further comprising one or more ionically resistive ionically permeable plates stacked with the AHRICS, wherein the plates are separated from one another.

13. The apparatus of claim 1 , further comprising a secondary cathode configured to divert ionic current from an edge region of the substrate.

14. The apparatus of claim 1 , further comprising a shield configured to block ionic current at the edge region of the substrate.

15. The apparatus of claim 1 , wherein the AHRICS is positioned such that the plating face of the substrate is within 10 mm of the closest AHRICS surface during electroplating.

16. A method of electroplating on a substrate, the method comprising:
(a) providing the substrate to a plating chamber configured to contain an electrolyte and an anode while electroplating metal onto the substrate, wherein the plating chamber comprises:
(i) a substrate holder holding the substrate such that a plating face of the substrate is separated from the anode during electroplating, and
(ii) an anisotropic high resistance ionic current source (AHRICS) having an edge region and a central region and comprising a substrate-facing surface having a shape that provides a smaller distance to the substrate from the edge region than from the central region during electroplating; and

(b) electroplating a metal onto the plating face of the substrate plating face while rotating the substrate and while providing the electrolyte in the plating chamber in the direction of the plating face of the substrate through the channels of the flow shaping element.

17. The method of claim 16 , wherein the AHRICS is positioned such that the plating face of the substrate is within 10 mm of the closest AHRICS surface during electroplating.

18. The method of claim 16 , wherein the AHRICS is made of an ionically resistive material, and comprises between about 1,000-25,000 non-communicating channels made within the ionically resistive material.

19. The method of claim 16 , wherein the AHRICS comprises an ionically resistive material with a plurality of channels made through said material, wherein said channels allow for transport of the electrolyte through the AHRICS.

20. The method of claim 16 , wherein the thickness of the AHRICS is substantially the same in the central region and in the edge region.

Assignees

• Lam Res Corp

Inventors

• He Zhian

Classifications

• H10P14/47

  Electrolytic deposition, i.e. electroplating; Electroless plating · CPC title

• H10W20/057

  by selectively depositing, e.g. by using selective CVD or plating · CPC title

• C25D17/008

  Current shielding devices · CPC title

• C25D17/10

  Electrodes {, e.g. composition, counter electrode} · CPC title

• C25D17/001 Primary

  Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells · CPC title