Ion beam apparatus including slit structure for extracting ion beam

Patent metadata

Field	Value
Publication number	US-10916403-B2
Application number	US-201916380012-A
Country	US
Kind code	B2
Filing date	Apr 10, 2019
Priority date	Dec 6, 2016
Publication date	Feb 9, 2021
Grant date	Feb 9, 2021

Abstract

An ion beam apparatus includes a source part generating plasma therein, a process part in which a process using an ion beam is performed, and a slit structure provided between the source part and the process part and extracting the ion beam from the plasma. The slit structure includes at least one electrode structure. The electrode structure has a slit penetrating the electrode structure and extending in a first direction. The ion beam is irradiated onto a substrate at an incident angle through the slit. The incident angle of the ion beam is adjusted by rotating the electrode structure on a rotation axis parallel to the first direction.

First claim

What is claimed is:

1. An ion beam apparatus, comprising:
a source part generating plasma;
a process part in which a process using an ion beam is performed;
a slit structure between the source part and the process part, the slit structure extracting the ion beam from the plasma, and the slit structure including:
an electrode plate, and
a plurality of slits through the electrode plate, each of the plurality of slits having a line shape with a longer length in a first direction than its width in a second direction when viewed in a plan view, some slits of the plurality of slits having decreasing lengths along the first direction as a distance from a center of the electrode plate along the second direction increases, and a length of at least some of the plurality of slits along the first direction being longer than half a length of the electrode plate along the first direction; and

a stage in the process part, a substrate to be loaded on the stage, wherein
the ion beam is irradiated onto the substrate at an incident angle through the plurality of slits,
the stage is provided to have a tilt angle with respect to a flat surface of the electrode plate, and
the incident angle of the ion beam is adjusted by adjusting the tilt angle of the stage.

2. The ion beam apparatus as claimed in claim 1 , wherein:
each of the plurality of slits has a straight line shape extending in the first direction when viewed in the plan view, and
the plurality of slits are arranged in the second direction intersecting the first direction when viewed in the plan view.

3. The ion beam apparatus as claimed in claim 1 , wherein:
the electrode plate is a first electrode plate and the plurality of slits is a plurality of first slits,
the slit structure further includes a second electrode plate vertically overlapping the first electrode plate and having a plurality of second slits,
each of the plurality of second slits vertically overlaps a corresponding one of the plurality of first slits,
the ion beam is irradiated onto the substrate through the plurality of first slits and the plurality of second slits, and
a first voltage applied to the first electrode plate is different from a second voltage applied to the second electrode plate.

4. The ion beam apparatus as claimed in claim 3 , wherein:
the slit structure further includes a third electrode plate vertically overlapping the first electrode plate and having a plurality of third slits,
the second electrode plate is between the first electrode plate and the third electrode plate,
each of the plurality of third slits vertically overlaps corresponding ones of the plurality of first slits and the plurality of second slits,
the ion beam is irradiated onto the substrate through the plurality of first slits, the plurality of second slits, and the plurality of third slits, and
a third voltage applied to the third electrode plate is different from the first voltage and the second voltage.

5. The ion beam apparatus as claimed in claim 1 , wherein the electrode plate is an electric conductor.

6. The ion beam apparatus as claimed in claim 1 , wherein the source part, the process part, and the slit structure are inside a same chamber.

7. The ion beam apparatus as claimed in claim 6 , wherein the electrode plate of the slit structure has a circular plane shape when viewed in a plan view.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Park Jongchul

Classifications

• H01J2237/0041

  Neutralising arrangements · CPC title

• H01J37/3171 Primary

  for ion implantation · CPC title

• H01J37/1471 Primary

  for centering, aligning or positioning of ray or beam · CPC title

• H01J37/04 Primary

  Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement {(H01J37/32009, H01J37/32623, H01J37/3266, H01J37/32697 take precedence; electron or ion-optical systems for localised treatment of objects H01J37/3007)} · CPC title

• H10N50/01

  Manufacture or treatment · CPC title