Method of stack patterning using a ion etching

Patent metadata

Field	Value
Publication number	US-9330885-B2
Application number	US-201113174132-A
Country	US
Kind code	B2
Filing date	Jun 30, 2011
Priority date	Jun 30, 2011
Publication date	May 3, 2016
Grant date	May 3, 2016

Abstract

The embodiments disclose a method of stack patterning, including loading a stack into a stationary stack stage, rotating one or more ion beam grid assemblies substantially concentrically aligned with the stationary stack stage to etch the stack and controlling the operation of the one or more ion beam grid assemblies to achieve substantial axial uniformity of the etched stack.

First claim

What is claimed is:

1. A method, comprising:
holding a single two-sided stack stationary in a stack stage;
rotating at least two grid assemblies while simultaneously ion beam etching both sides of the stack in a mirrored fashion,
wherein the grid assemblies are configured to collimate ions extracted from a plasma source into ion beams for the ion beam etching, and
wherein the grid assemblies are concentrically aligned with the stack stage on a common axis; and

controlling the grid assemblies to simultaneously achieve uniform milling depths on both sides of the stack.

2. The method of claim 1 ,
wherein the grid assemblies are configured to direct the ion beams parallel to the common axis with minimal divergence.

3. The method of claim 1 ,
wherein the plasma source comprises at least two plasma generators respectively corresponding to the at least two grid assemblies to independently supply plasma ions.

4. The method of claim 1 , further comprising
using a loading device to load the stack into the stack stage for processing.

5. The method of claim 1 , further comprising
using an unloading device to unload the stack from the stack stage after processing.

6. The method of claim 1 , further comprising
simultaneously introducing one or more gaseous elements or compounds as reactive agents into the grid assemblies.

7. A method, comprising:
holding a single two-sided stack in a stationary position concentrically aligned with at least two grid assemblies on a common axis,
wherein the grid assemblies are configured to extract ions from a plasma source into ion beams parallel to the common axis with minimal divergence; and

independently rotating the grid assemblies to simultaneously ion beam etch the stack to achieve uniformity in milling depths on both sides of the stack,
wherein independently rotating comprises independently rotating with respect to direction of rotation or rotational speed.

8. The method of claim 7 ,
wherein the direction of rotation for each grid assembly is independent of another.

9. The method of claim 7 ,
wherein the rotational speed for each grid assembly is independent of another.

10. The method of claim 7 ,
wherein the plasma source comprises an independent plasma source for each of the grid assemblies.

11. The method of claim 7 , further comprising
independently introducing one or more gaseous elements or compounds as reactive agents into the grid assemblies.

12. The method of claim 7 , further comprising
using a system to load the stack into a concentric stationary stack stage for processing, and using a system to unload the stack from the stack stage after processing.

13. The method of claim 7 , further comprising
using an independent control system for rotating the grid assemblies to control milling depth.

14. A method, comprising:
independently rotating each of at least two grid assemblies concentrically aligned with a stationary two-sided stack on a common axis,
wherein the grid assemblies are configured to extract ions from a plasma source into ion beams parallel to the common axis with minimal divergence, and
wherein independently rotating comprises independently rotating with respect to direction of rotation or rotational speed; and

simultaneously ion beam etching both sides of the stack with the grid assemblies.

15. The method of claim 14 , further comprising
holding the stack stationary in a stack stage without rotation.

16. The method of claims 14 ,
wherein holding the stack stationary reduces chaff compared to that of a rotating stack stage.

17. The method of claim 14 ,
wherein independently rotating each of the at least two grid assemblies comprises independently rotating the grid assemblies in different directions.

18. The method of claim 14 ,
wherein independently rotating each of the at least two grid assemblies comprises independently rotating the grid assemblies at different speeds.

19. The method of claim 14 ,
wherein simultaneously etching both sides of the stack comprises achieving uniform milling depths on both sides of the stack.

20. The method of claim 19 ,
wherein simultaneously etching both sides of the stack comprises achieving mirrored milling results on each side of the stack.

21. The method of claim 14 , further comprising
independently introducing one or more gaseous elements or compounds as reactive agents into the grid assemblies.

Assignees

• Feldbaum Michael R
• Hwu Justin Jia-Jen
• Kuo David S
• Gauzner Gennady
• Wang Li-Ping
• Seagate Technology Llc

Inventors

• Feldbaum Michael R
• Hwu Justin Jia-Jen
• Kuo David S
• Gauzner Gennady
• Wang Li-Ping

Classifications

• H01J2237/2007

  Holding mechanisms · CPC title

• H01J2237/31749

  Focused ion beam · CPC title

• H01J37/3056

  for microworking, e. g. etching of gratings or trimming of electrical components · CPC title

• H01J37/30 Primary

  Electron-beam or ion-beam tubes for localised treatment of objects · CPC title

• H01J37/3053

  for evaporating or etching · CPC title