Etching of silicon nitride and silica deposition control in 3D NAND structures

Patent metadata

Field	Value
Publication number	US-10886290-B2
Application number	US-201916517097-A
Country	US
Kind code	B2
Filing date	Jul 19, 2019
Priority date	Jul 20, 2018
Publication date	Jan 5, 2021
Grant date	Jan 5, 2021

Abstract

A method of etching a substrate includes providing an etching solution in a tank of an etch processing system, where the etch processing system is configured to control temperature of the etching solution, a concentration of the etching solution, and flow of the etching solution within the tank. The substrate contains micro-fabricated structures that have alternating layers of a first material and a second material, and the etching solution including an acid that etches the first material and results in an etch product to be moved from the substrate. The method further includes monitoring a concentration of the etch product within the etching solution, and maintaining the concentration of the etch product within the etching solution below a predetermined value to prevent deposition of the etch product on the second material in an amount that blocks etching of the first material by the etching solution.

First claim

What is claimed is:

1. A method of etching a substrate, the method comprising:
providing an etching solution in a tank of an etch processing system, the etch processing system configured to control temperature of the etching solution, a concentration of the etching solution, and flow of the etching solution within the tank;
submerging a substrate in the etching solution, the substrate containing micro-fabricated structures that have alternating layers of a first material and a second material, the etching solution including an acid that etches the first material;
initiating etching of the first material at a first etch rate, etching of the first material resulting in an etch product to be moved from the substrate;
monitoring a concentration of the etch product within the etching solution; and
in response to identifying that the concentration of the etch product is greater than a predetermined value, decreasing the first etch rate to a second etch rate.

2. The method of claim 1 , wherein decreasing the first etch rate is executed by reducing a temperature of the etching solution.

3. The method of claim 1 , wherein decreasing the first etch rate is executed by reducing a concentration of the acid within the etching solution.

4. The method of claim 1 , further comprising
in response to identifying that the concentration of the etch product is below a second predetermined value, increasing a given etch rate to a third etch rate.

5. The method of claim 4 , wherein increasing the given etch rate is executed by increasing a temperature of the etching solution.

6. The method of claim 4 , wherein increasing the given etch rate is executed by increasing a concentration of the acid within the etching solution.

7. The method of claim 1 , wherein the first material contains silicon nitride, the second material contains silicon oxide, and the etch product includes silica.

8. The method of claim 7 , wherein the acid includes phosphoric acid.

9. The method of claim 7 , where the predetermined value of the concentration of the etch product is about 70 ppm in the etching solution.

10. The method of claim 1 , wherein the substrate is one of multiple substrates in the tank.

11. The method of claim 10 , wherein a spacing of the multiple substrates enables convective flow of the etching solution.

12. The method of claim 1 , wherein the micro-fabricated structure includes a memory device.

13. The method of claim 12 , wherein the memory device includes a 3D NAND device.

14. A method of etching a substrate, the method comprising:
providing an etching solution in a tank of an etch processing system, the etch processing system configured to control temperature of the etching solution, a concentration of the etching solution, and flow of the etching solution within the tank;
submerging a substrate in the etching solution, the substrate containing micro-fabricated structures that have alternating layers of a first material and a second material, the etching solution including an acid that etches the first material;
initiating etching of the first material at a first etch rate, etching of the first material resulting in an etch product to be moved from the substrate;
monitoring a concentration of the etch product within the etching solution; and
in response to identifying that the concentration of the etch product falls below a predetermined value, increasing the first etch rate to a second etch rate.

15. The method of claim 14 , wherein the first material contains silicon nitride, the second material contains silicon oxide, the etch product includes silica, and the acid includes phosphoric acid.

16. A method of etching a substrate, the method comprising:
providing an etching solution in a tank of an etch processing system, the etch processing system configured to control temperature of the etching solution, a concentration of the etching solution, and flow of the etching solution within the tank;
submerging a substrate in the etching solution, the substrate containing micro-fabricated structures that have alternating layers of a first material and a second material, the etching solution including an acid that etches the first material;
initiating etching of the first material at a first etch rate, etching of the first material resulting in an etch product to be moved from the substrate;
monitoring a concentration of the etch product within the etching solution; and
maintaining the concentration of the etch product within the etching solution below a predetermined value to prevent deposition of the etch product on the second material in an amount that blocks etching of the first material by the etching solution, wherein the maintaining is performed by controlling the first etch rate through one or more of the temperature of the etching solution, the concentration of the etching solution, and the flow of the etching solution within the tank.

17. The method of claim 16 , wherein maintaining the concentration of the etch product within the etching solution below a predetermined value includes controlling the temperature of the etching solution, controlling the concentration of the acid, or both.

18. The method of claim 16 , wherein the first material contains silicon nitride, the second material contains silicon oxide, and the etch product includes silica.

19. The method of claim 18 , wherein the acid includes phosphoric acid.

20. The method of claim 19 , where the predetermined value of the concentration of the etch product is about 70 ppm or less in the etching solution.

Assignees

• Tokyo Electron Ltd

Inventors

• Bassett Derek
• Rotondaro Antonio
• Simms Ihsan
• Hurd Trace

Classifications

• H10P50/283 Primary

  by chemical means · CPC title

• H10D30/69

  IGFETs having charge trapping gate insulators, e.g. MNOS transistors · CPC title

• H10B43/50

  characterised by the boundary region between the core and peripheral circuit regions · CPC title

• H10B43/35

  with cell select transistors, e.g. NAND · CPC title

• H10B43/27 Primary

  the channels comprising vertical portions, e.g. U-shaped channels · CPC title