Bio-field effect transistor device

Patent metadata

Field	Value
Publication number	US-10876997-B2
Application number	US-201715661969-A
Country	US
Kind code	B2
Filing date	Jul 27, 2017
Priority date	Jul 27, 2017
Publication date	Dec 29, 2020
Grant date	Dec 29, 2020

Abstract

A bioFET device includes a semiconductor substrate having a first surface and an opposite, parallel second surface and a plurality of bioFET sensors on the semiconductor substrate. Each of the bioFET sensors includes a gate formed on the first surface of the semiconductor substrate and a channel region formed within the semiconductor substrate beneath the gate and between source/drain (S/D) regions in the semiconductor substrate. The channel region includes a portion of the second surface of the semiconductor substrate. An isolation layer is disposed on the second surface of the semiconductor substrate. The isolation layer has an opening positioned over the channel region of more than one bioFET sensor of the plurality of bioFET sensors. An interface layer is disposed on the channel region of the more than one bioFET sensor in the opening.

First claim

What is claimed is:

1. A bio-field effect transistor (bioFET) device, comprising:
a semiconductor substrate having a first surface and an opposite, parallel second surface;
a plurality of bioFET sensors disposed on the semiconductor substrate, each bioFET sensor comprising:
a gate formed on the first surface of the semiconductor substrate; and
a first channel region formed within the semiconductor substrate beneath the gate and between a first pair of source/drain (S/D) regions in the semiconductor substrate, wherein the first channel region includes a first portion of the second surface of the semiconductor substrate;

a plurality of access FETs, each of the access FETs having an access gate disposed on the first surface of the semiconductor substrate and a second channel region formed within the semiconductor substrate beneath the access gate and between a second pair of S/D regions in the semiconductor substrate, wherein the second channel region includes a second portion of the second surface of the semiconductor substrate;
an isolation layer disposed on the second surface of the semiconductor substrate, wherein the isolation layer extends over the second channel regions of the plurality of access FETs and wherein the isolation layer has an opening positioned over the first channel region of more than one bioFET sensor of the plurality of bioFET sensors; and
a continuous interface layer disposed on the isolation layer and within the opening over the first channel region of the more than one bioFET sensor, wherein the continuous interface layer extends over the second channel regions of the plurality of access FETs.

2. The bioFET device of claim 1 , further comprising a microfluidic channel disposed over the plurality of access FETs and the plurality of bioFET sensors.

3. The bioFET device of claim 1 , wherein one of the first pair of S/D regions of each of the plurality of bioFET sensors is electrically coupled to one of the second pair of S/D regions of the plurality of access FETs.

4. The bioFET device of claim 1 , further comprising a piezoelectric mixer disposed over the plurality of access FETs and over the plurality of bioFET sensors, wherein the piezoelectric mixer is bonded to the continuous interface layer through channel walls disposed on the plurality of access FETs and the plurality of bioFET sensors.

5. The bioFET device of claim 1 , wherein each bioFET sensor further comprises:
a second gate formed on the first surface of the semiconductor substrate; and
a third channel region formed within the semiconductor substrate beneath the second gate and between the first pair of S/D regions in the semiconductor substrate.

6. A bio-field effect transistor (bioFET) device, comprising:
a semiconductor substrate having a first surface and an opposite, parallel second surface;
a plurality of bioFET sensors disposed on the semiconductor substrate, each bioFET sensor comprising:
a sensing gate formed on the second surface of the semiconductor substrate;
first and second gates formed on the first surface of the semiconductor substrate; and
first and second channel regions formed within the semiconductor substrate beneath the first and second gates, respectively, wherein the first and second channel regions include first and second portions, respectively, of the second surface of the semiconductor substrate;
a common source/drain (S/D) region disposed between the first and second channel regions; and
another S/D region coupled to a ground potential;

a plurality of access FETs, each of the access FETs having an access gate disposed on the first surface of the semiconductor substrate and a third channel region formed within the semiconductor substrate beneath the access gate, wherein the third channel region includes a third portion of the second surface of the semiconductor substrate;
an isolation layer disposed on the second surface of the semiconductor substrate, the isolation layer having an opening positioned over the first and second channel regions of more than one bioFET sensor of the plurality of bioFET sensors;
a first portion of an interface layer disposed within the opening on the first and second channel regions of the more than one bioFET sensor and a second portion of the interface layer disposed on the plurality of access FETs; and
a microfluidic channel positioned over the plurality of access FETs and the plurality of bioFET sensors and configured to deliver fluid into the opening through the isolation layer.

7. The bioFET device of claim 6 , wherein an S/D region of each access FET of the plurality of access FETs is electrically coupled to the common S/D region of each bioFET sensor of the plurality of bioFET sensors.

8. The bioFET device of claim 6 , wherein the microfluidic channel comprises a piezoelectric mixer aligned substantially over the opening through the isolation layer.

9. The bioFET device of claim 6 , wherein each bioFET sensor further comprises:
a fourth channel region formed within the semiconductor substrate beneath the sensing gate.

10. The bioFET device of claim 6 , wherein the opening has a longest length aligned with an X-direction and the microfluidic channel is configured to deliver fluid that flows over the opening in the X-direction.

11. A sensor array, comprising:
a semiconductor substrate having a first surface and an opposite, parallel second surface;
a plurality of bioFET sensors arranged in a matrix of rows and columns on the semiconductor substrate, each bioFET sensor comprising:
a sensing gate formed on the second surface of the semiconductor substrate;
first and second gates formed on the first surface of the semiconductor substrate; and
first and second channel regions formed within the semiconductor substrate beneath first and second gates, respectively, wherein the first and second channel regions include first and second portions, respectively, of the second surface of the semiconductor substrate;
a common source/drain (S/D) region disposed between the first and second channel regions; and
another S/D region coupled to a ground potential;

a plurality of access FETs, each of the access FETs having an access gate disposed on the first surface of the semiconductor substrate and a third channel region formed within the semiconductor substrate beneath the access gate, wherein the third channel region includes a third portion of the second surface of the semiconductor substrate;
an isolation layer disposed on the second surface of the semiconductor substrate, the isolation layer having an opening that extends along a length of at least one row of the matrix of rows such that the opening extends over the first and second channel regions of more than one bioFET sensor of the plurality of bioFET sensors in the at least one row; and
a continuous interface layer disposed on the isolation layer and on the second surface of the semiconductor substrate exposed within the opening over the first and second channel regions.

12. The sensor array of claim 11 , wherein the plurality of access FETs are arranged in a row on the semiconductor substrate, and wherein the opening in the isolation layer is not positioned over the third channel regions of the plurality of access FETs.

13. The sensor array of claim 11 , wherein the common S/D region of each bioFET sensor of the plurality of bioFET sensors is electrically coupled to an S/D region of a corresponding access FET of the plurality of access FETs.

14. The sensor array of claim 13 , wherein the corresponding access FET is arranged on the semiconductor substrate to be adjacent to at least one bioFET sensor.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Huang Jui-Cheng
• Chang Yi-Hsien
• Wen Chin-Hua
• Cheng Chun-Ren
• Huang Shih-Fen
• Chen Tung-Tsun
• Huang Yu-Jie
• Lin Ching-Hui
• Cheng Sean
• Chang Hector

Classifications

• H10D30/795

  being in lateral device isolation regions, e.g. STI · CPC title

• H10D30/794

  comprising conductive materials, e.g. silicided source, drain or gate electrodes · CPC title

• H10D62/213

  Channel regions of field-effect devices · CPC title

• H10D30/798 Primary

  being provided in or under the channel regions · CPC title

• H04N25/77

  Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components · CPC title