Unit pixel of image sensor and light-receiving element thereof

Patent metadata

Field	Value
Publication number	US-10868208-B2
Application number	US-201815885757-A
Country	US
Kind code	B2
Filing date	Jan 31, 2018
Priority date	Jan 31, 2018
Publication date	Dec 15, 2020
Grant date	Dec 15, 2020

Abstract

Provided are a light-receiving element which has more capability of detecting wavelengths than that of existing silicon light-receiving elements and a unit pixel of an image sensor by using it. The light-receiving element includes: a light-receiving unit which is floated or connected to external voltage and absorbs light; an oxide film which is formed to come in contact with a side of the light-receiving unit; a source and a drain which stand off the light-receiving unit with the oxide film in between and face each other; a channel which is formed between the source and the drain and forms an electric current between the source and the drain; and a wavelength expanding layer which is formed in at least one among the light-receiving unit, the oxide film and the channel and forms a plurality of local energy levels by using strained silicon.

First claim

What is claimed is:

1. A light-receiving element having characteristics of wavelength expansion, comprising:
a light-receiving unit which is structured to be floated and absorbs light;
an oxide film which contacts a side of the light-receiving unit;
a source and a drain which stand off the light-receiving unit with the oxide film in between the source and the drain, and the source and the drain facing each other;
a channel region formed between the source and the drain such that an electric current can be formed between the source and the drain; and
at least one wavelength expanding layer, formed in at least one among the light-receiving unit, the oxide film, and the channel region, and the at least one wavelength expanding layer splits energy levels to form a plurality of local energy levels,
wherein the light-receiving unit is electrically insulated from the source and the drain by the oxide film;
when a local energy level condition of at least one of the plurality of local energy levels is met, electrons excited by received light flow into the light-receiving unit under a tunneling effect; and
the electric current along the channel region is controlled according to change of electric charge quantity in the light-receiving unit from the flow of the electrons,
wherein the wavelength expanding layer splits the energy levels of the conduction band and the valence band according to the direction of the crystal lattice arrangement of the wavelength expanding layer.

2. The light-receiving element of claim 1 , wherein the light-receiving element is formed on a silicon substrate in which first-type impurities are doped.

3. The light-receiving element of claim 2 , wherein the source and the drain are formed on a well in which second-type impurities are doped and the well is floated.

4. The light-receiving element of claim 1 , comprising a plurality of the wavelength expanding layers, which are different from each other in terms of at least one of their formation location and manufacturing process.

5. The light-receiving element of claim 1 , wherein the wavelength expanding layer is formed by applying stress onto an interface of a silicon layer and the oxide film.

6. The light-receiving element of claim 1 , wherein the wavelength expanding layer is formed by bonding heteroatoms to or injecting ions into a silicon crystal which forms the light-receiving unit or the channel region.

7. The light-receiving element of claim 1 , wherein the size of the light-receiving unit corresponds to a de Broglie wavelength of an electron.

8. The light-receiving element of claim 1 , further comprising a terminal which applies a gate voltage to the light-receiving unit so as to control a threshold voltage and any output signals by controlling a gap between a Fermi level and an intrinsic level of the channel region.

9. The light-receiving element of claim 1 , wherein the tunneling occurs in an oxide film zone between any one of the channel region and the drain, and the light-receiving unit.

Assignees

• Kim Hoon

Inventors

• Kim Hoon

Classifications

• H10F39/196

  Junction field effect transistor [JFET] image sensors; Static induction transistor [SIT] image sensors · CPC title

• H10F39/12

  Image sensors · CPC title

• H10F77/496

  Luminescent members, e.g. fluorescent sheets (wavelength conversion means for photovoltaic cells H10F77/45) · CPC title

• H10F77/413

  directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42) · CPC title

• H10F77/16

  Material structures, e.g. crystalline structures, film structures or crystal plane orientations · CPC title