Composition for forming P-type diffusion layer, method of forming P-type diffusion layer, and method of producing photovoltaic cell
US-9520529-B2 · Dec 13, 2016 · US
Material structures, e.g. crystalline structures, film structures or crystal plane orientations
Material structures, e.g. crystalline structures, film structures or crystal plane orientations · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10F77/16 |
| Official title | Material structures, e.g. crystalline structures, film structures or crystal plane orientations |
| Display label | Material structures, e.g. crystalline structures, film structures or crystal plane orientations |
| Total patents | 448 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 33 |
| 2016 | 57 |
| 2017 | 43 |
| 2018 | 46 |
| 2019 | 48 |
| 2020 | 38 |
| 2021 | 39 |
| 2022 | 35 |
| 2023 | 37 |
| 2024 | 27 |
| 2025 | 35 |
| 2026 | 10 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer
US-9515211-B2 · Dec 6, 2016 · US
Semiconductor device
US-2016351392-A1 · Dec 1, 2016 · US
Dry etch method for texturing silicon and device
US-2016351733-A1 · Dec 1, 2016 · US
Hexagonal phase epitaxial cadmium sulfide on copper indium gallium selenide for a photovoltaic junction
US-2016336475-A1 · Nov 17, 2016 · US
Solar cell and manufacturing method thereof
US-2016308080-A1 · Oct 20, 2016 · US
Photoelectric conversion device and manufacturing method thereof
US-9450132-B2 · Sep 20, 2016 · US
Photoelectric conversion device
US-2016268458-A1 · Sep 15, 2016 · US
Optical detector
US-9425335-B2 · Aug 23, 2016 · US
Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers
US-9425249-B2 · Aug 23, 2016 · US
Layer system for thin-film solar cells
US-2016233360-A1 · Aug 11, 2016 · US
Planar nonpolar group-iii nitride films grown on miscut substrates
US-2016230312-A1 · Aug 11, 2016 · US
Method to make buried, highly conductive p-type iii-nitride layers
US-2016197151-A1 · Jul 7, 2016 · US
Silicon heterojunction photovoltaic device with wide band gap emitter
US-9373743-B2 · Jun 21, 2016 · US
CMOS image sensor with epitaxial passivation layer
US-9349768-B2 · May 24, 2016 · US
Light absorption apparatus
US-2016141329-A1 · May 19, 2016 · US
Monodisperse core/shell and other complex structured nanocrystals and methods of preparing the same
US-9340726-B2 · May 17, 2016 · US
Planar nonpolar group-III nitride films grown on miscut substrates
US-9340899-B2 · May 17, 2016 · US
Iii-v photovoltaic elements
US-2016118525-A1 · Apr 28, 2016 · US
Semiconductor light emitting device
US-9324916-B2 · Apr 26, 2016 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10F77/16?
- CPC H10F77/16 is the Cooperative Patent Classification code for “Material structures, e.g. crystalline structures, film structures or crystal plane orientations.”
- How many patents are filed under CPC H10F77/16 (Material structures, e.g. crystalline structures, film structures or crystal plane orientations)?
- Our database includes 448 publications tagged with this CPC code.
- Is patent activity under CPC H10F77/16 growing?
- Publication counts under this code: 27 in 2024 vs 35 in 2025 (latest complete years).