High accuracy of relative defect locations for repeater analysis
US-10365232-B2 · Jul 30, 2019 · US
US10865139B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10865139-B2 |
| Application number | US-201815972416-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 7, 2018 |
| Priority date | May 8, 2017 |
| Publication date | Dec 15, 2020 |
| Grant date | Dec 15, 2020 |
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A large-size synthetic quartz glass substrate has a diagonal length of at least 1,000 mm. Provided that an effective range is defined on the substrate surface, and the effective range is partitioned into a plurality of evaluation regions such that the evaluation regions partly overlap each other, a flatness in each evaluation region is up to 3 μm. From the quartz glass substrate having a high flatness and a minimal local gradient within the substrate surface, a large-size photomask is prepared.
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The invention claimed is: 1. A method for evaluating the flatness of a large-size synthetic quartz glass substrate having front and back surfaces, the method comprising the steps of: partitioning an effective range into a plurality of evaluation regions such that the evaluation regions partly overlap each other, the effective range defined on one or both of the front and back surfaces of the large-size synthetic quartz glass substrate; measuring a flatness within each evaluation region; and computing a difference between the flatness in one evaluation region and the flatness in another evaluation region overlapping the one evaluation region, wherein the large-size synthetic quartz glass substrate has a diagonal length of at least 1,000 mm, and a thickness of 5 to 30 mm. 2. The method of claim 1 , wherein the substrate is rectangular, the effective range is a rectangular range defined on the substrate surface by removing a band extending 10 mm from each side of the substrate surface, the rectangular range having two pairs of opposed sides, and the evaluation region is delineated by one pair of opposed sides of the effective range and two straight lines parallel to the other pair of opposed sides and has a width of 100 to 300 mm along the one pair of opposed sides. 3. The method of claim 1 , wherein for each evaluation region, the area of the overlap between that evaluation region and the closest one of overlapping evaluation regions is 50 to 98% of the area of each evaluation region. 4. A method for manufacturing a large-size synthetic quartz glass substrate, comprising the steps of: evaluating the flatness of a large-size quartz glass substrate according to the method of claim 1 , determining an amount of material removal in polishing on the basis of the measured flatness and flatness difference, and locally polishing the surface of the quartz glass substrate in accordance with the determined amount of material removal in polishing. 5. The method of claim 4 , wherein the substrate is rectangular, the effective range is a rectangular range defined on the substrate surface by removing a band extending 10 mm from each side of the substrate surface, the rectangular range having two pairs of opposed sides, and the evaluation region is delineated by one pair of opposed sides of the effective range and two straight lines parallel to the other pair of opposed sides and has a width of 100 to 300 mm along the one pair of opposed sides. 6. The method of claim 4 , wherein for each evaluation region, the area of the overlap between that evaluation region and the closest one of overlapping evaluation regions is 50 to 98% of the area of each evaluation region. 7. The method of claim 4 , wherein the surface of the quartz glass substrate is locally polished in accordance with the determined amount of material removal in polishing so that a flatness in each evaluation region is up to 3 μm.
for measuring roughness or irregularity of surfaces · CPC title
with more than 90% silica by weight, e.g. quartz {(C03C3/045 takes precedence)} · CPC title
Processes specially adapted for the production of quartz or fused silica articles {, not otherwise provided for (C03B19/01, C03B19/066, C03B19/106, C03B19/12, C03B19/14, C03B37/00 take precedence)} · CPC title
for controlling eveness · CPC title
Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes · CPC title
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