Unit pixel of image sensor and light-receiving element thereof

Patent metadata

Field	Value
Publication number	US-10847671-B2
Application number	US-201916709911-A
Country	US
Kind code	B2
Filing date	Dec 10, 2019
Priority date	Jan 31, 2018
Publication date	Nov 24, 2020
Grant date	Nov 24, 2020

Abstract

Provided are a light-receiving element which has more capability of detecting wavelengths than that of existing silicon light-receiving elements and a unit pixel of an image sensor by using it. The light-receiving element includes: a light-receiving unit which is floated or connected to external voltage and absorbs light; an oxide film which is formed to come in contact with a side of the light-receiving unit; a source and a drain which stand off the light-receiving unit with the oxide film in between and face each other; a channel which is formed between the source and the drain and forms an electric current between the source and the drain; and a wavelength expanding layer which is formed in at least one among the light-receiving unit, the oxide film and the channel and forms a plurality of local energy levels by using strained silicon.

First claim

What is claimed is:

1. A unit pixel of an image sensor, comprising:
a light-receiving element which generates an electric current by using change of electric charge quantity caused by incident light; and
a reset element which removes residual electric charges from the light-receiving element,
wherein the light-receiving element comprises:
a light-receiving unit which is structured to be floated and absorbs light;

a source and a drain which stand off the light-receiving unit with an oxide film in-between;
a channel region formed between the source and the drain, and an electric current formed between the source and the drain; and
a wavelength expanding layer which forms a plurality of local energy levels, and controls the electric current along the channel region based on change of electric charge quantity in the light-receiving unit, while electrons excited when light is received flow into the light-receiving unit under a tunneling effect when a local energy level condition of at least one of the plurality of local energy levels is met, and

wherein the wavelength expending layer split the energy levels of the conduction band and the valence band according to the direction of a crystal lattice arrangement of the light-receiving unit.

2. The unit pixel of the image sensor of claim 1 , wherein the reset element removes residual charges from a diffusion well where the light-receiving element is formed.

3. The unit pixel of the image sensor of claim 2 , wherein the diffusion well remains floated while the light-receiving element operates.

4. The unit pixel of the image sensor of claim 2 , wherein the reset element of the unit pixel of an image sensor is connected to a diffusion layer in which a first-type of impurities are doped in high density on the diffusion well in which the first-type of impurities are doped.

5. The unit pixel of the image sensor of claim 1 , wherein the wavelength expanding layer comprises strained silicon.

6. The unit pixel of the image sensor of claim 1 , wherein the light-receiving element comprises the light-receiving unit which corresponds to a de Broglie wavelength.

7. A unit pixel of an image sensor, comprising:
a light-receiving element which generates an electric current by using change of electric charge quantity caused by incident light;
a selection element which outputs the electric current generated in the light-receiving element to a unit pixel out; and
a reset element which removes residual electric charges from the light-receiving element,
wherein the light-receiving element comprises:
a light-receiving unit which is structured to be floated and absorbs light;
a source and a drain which stand off the light-receiving unit with a oxide film in between;
a channel region which is formed between the source and the drain, and an electric current formed between the source and the drain; and
a wavelength expanding layer which forms a plurality of local energy levels, and controls the electric current along the channel region based on change of electric charge quantity in the light-receiving unit while electrons excited when light is received flow into the light-receiving unit under a tunneling effect when a local energy level condition of at least one of the plurality of local energy levels is met, and

wherein the wavelength expanding layer splits the energy levels of the conduction band and the valence band according to the direction of a crystal lattice arrangement of the light-receiving unit.

8. The unit pixel of the image sensor of claim 7 , wherein the selection element comprises:
a source and a drain which are connected to the light-receiving element and the unit pixel out, respectively; and
a gate to which selection signals are applied from the outside, and performs switching operation on the basis of the applied selection signals.

9. The unit pixel of the image sensor of claim 7 , wherein the wavelength expanding layer comprises strained silicon.

10. The unit pixel of the image sensor of claim 7 , wherein the light-receiving element comprises the light-receiving unit which corresponds to a de Broglie wavelength.

Assignees

• Kim Hoon

Inventors

• Kim Hoon

Classifications

• H10F39/196

  Junction field effect transistor [JFET] image sensors; Static induction transistor [SIT] image sensors · CPC title

• H10F39/12

  Image sensors · CPC title

• H10F77/496

  Luminescent members, e.g. fluorescent sheets (wavelength conversion means for photovoltaic cells H10F77/45) · CPC title

• H10F77/413

  directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42) · CPC title

• H10F77/16

  Material structures, e.g. crystalline structures, film structures or crystal plane orientations · CPC title