Systems and methods for annealing semiconductor structures

Patent metadata

Field	Value
Publication number	US-10847389-B2
Application number	US-201916658312-A
Country	US
Kind code	B2
Filing date	Oct 21, 2019
Priority date	Oct 30, 2013
Publication date	Nov 24, 2020
Grant date	Nov 24, 2020

Abstract

Systems and methods are provided for annealing a semiconductor structure. In one embodiment, the method includes providing an energy-converting structure proximate a semiconductor structure, the energy-converting structure comprising a material having a loss tangent larger than that of the semiconductor structure; providing a heat reflecting structure between the semiconductor structure and the energy-converting structure; and providing microwave radiation to the energy-converting structure and the semiconductor structure. The semiconductor structure may include at least one material selected from the group consisting of boron-doped silicon germanium, silicon phosphide, titanium, nickel, silicon nitride, silicon dioxide, silicon carbide, n-type doped silicon, and aluminum capped silicon carbide. The heat reflecting structure may include a material substantially transparent to microwave radiation and having substantial reflectivity with respect to infrared radiation.

First claim

What is claimed is:

1. A system comprising:
a radiation source for generating first radiation;
a shell defining an interior cavity, wherein the shell includes an opening through which the first radiation generated by the radiation source passes through;
a semiconductor structure disposed within the interior cavity of the shell;
an energy-converting structure disposed within the interior cavity of the shell, the energy-converting structure configured to convert first radiation into second radiation; and
a second radiation reflecting structure disposed within the interior cavity of the shell, wherein the second radiation reflecting structure reflects second radiation generated by the semiconductor structure back towards the semiconductor structure.

2. The system of claim 1 , wherein the second radiation reflecting structure is disposed over the semiconductor structure and the energy-converting structure is disposed over the second radiation reflecting structure.

3. The system of claim 2 , wherein the energy-converting structure is spaced apart from the second radiation reflecting structure.

4. The system of claim 1 , wherein the first radiation includes microwave radiation and the second radiation includes thermal radiation.

5. The system of claim 1 , wherein the shell includes only the single opening through which the first radiation generated by the radiation source passes through.

6. The system of claim 1 , wherein the second radiation reflecting structure includes a semiconductor wafer.

7. The system of claim 1 , wherein the shell is formed of a metal material.

8. A system comprising:
a radiation source for generating first radiation;
an energy-converting structure disposed over a semiconductor structure, the energy-converting structure configured to convert first radiation into second radiation; and
a semiconductor wafer positioned between the semiconductor structure and the energy-converting structure, wherein the semiconductor wafer reflects second radiation generated by the semiconductor structure back towards the semiconductor structure, wherein the semiconductor wafer is spaced apart from the energy-converting structure and the semiconductor structure.

9. The system of claim 8 , wherein the semiconductor wafer is positioned a first distance away from the energy-converting structure and a second distance away from the semiconductor wafer, the first distance being the same as the second distance.

10. The system of claim 8 , wherein the semiconductor wafer is positioned a first distance away from the energy-converting structure and a second distance away from the semiconductor wafer, the first distance being different than the second distance.

11. The system of claim 8 , further comprising another energy-converting structure disposed under the semiconductor structure.

12. The system of claim 11 , wherein the another energy-converting structure is spaced apart from the semiconductor structure.

13. The system of claim 8 , wherein the radiation source is a microwave radiation source,
wherein the energy-converting structure is configured to convert microwave radiation into thermal radiation, and
wherein the semiconductor wafer reflects thermal radiation generated by the semiconductor structure back towards the semiconductor structure.

14. The system of claim 8 , wherein the energy-converting structure includes at least one material selected from the group consisting of boron-doped silicon germanium, silicon phosphide, titanium, nickel, silicon nitride, silicon dioxide, silicon carbide, n-type doped silicon, and aluminum cap silicon carbide.

15. A method comprising:
providing a first energy-converting structure and a thermal radiation reflecting structure proximate a semiconductor structure;
adjusting one of the thermal radiation reflecting structure and the semiconductor structure to change a distance between the thermal radiation reflecting structure and the semiconductor structure; and
providing radiation to the first energy-converting structure while the thermal radiation reflecting structure is between the semiconductor structure and the first energy-converting structure.

16. The method of claim 15 , wherein the thermal radiation reflecting structure is spaced apart from the first energy-converting structure during the providing of the radiation to the first energy-converting structure while the thermal radiation reflecting structure is between the semiconductor structure and the first energy-converting structure.

17. The method of claim 15 , further comprising epitaxially growing the thermal radiation reflecting structure on the first energy-converting structure.

18. The method of claim 15 , further comprising positioning the first energy-converting structure, the thermal radiation reflecting structure and the semiconductor structure into an interior cavity of a shell, and
wherein the providing of the radiation to the first energy-converting structure includes proving the radiation through an opening in the shell to the first energy-converting structure disposed within the cavity of the shell.

19. The method of claim 15 , wherein the providing of the radiation to the first energy-converting structure includes applying radiation to the semiconductor structure to activate a dopant region on the semiconductor structure.

20. The method of claim 15 , wherein the thermal radiation reflecting structure includes a silicon wafer.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Tsai Chun-Hsiung
• Fang Zi-Wei
• Wang Chao-Hsiung

Classifications

• H10P95/90 Primary

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P72/0436 Primary

  mainly by radiation · CPC title

• H05B6/80

  Apparatus for specific applications (stoves or ranges F24C7/02) · CPC title

• H05B6/6491

  combined with the use of susceptors (H05B6/80 and subgroups takes precedence) · CPC title

• H05B6/806

  for laboratory use · CPC title