Systems and methods for annealing semiconductor structures

Patent metadata

Field	Value
Publication number	US-10453716-B2
Application number	US-201816048847-A
Country	US
Kind code	B2
Filing date	Jul 30, 2018
Priority date	Oct 30, 2013
Publication date	Oct 22, 2019
Grant date	Oct 22, 2019

Abstract

Systems and methods are provided for annealing a semiconductor structure. In one embodiment, the method includes providing an energy-converting structure proximate a semiconductor structure, the energy-converting structure comprising a material having a loss tangent larger than that of the semiconductor structure; providing a heat reflecting structure between the semiconductor structure and the energy-converting structure; and providing microwave radiation to the energy-converting structure and the semiconductor structure. The semiconductor structure may include at least one material selected from the group consisting of boron-doped silicon germanium, silicon phosphide, titanium, nickel, silicon nitride, silicon dioxide, silicon carbide, n-type doped silicon, and aluminum capped silicon carbide. The heat reflecting structure may include a material substantially transparent to microwave radiation and having substantial reflectivity with respect to infrared radiation.

First claim

What is claimed is:

1. A system comprising:
a radiation source for generating first radiation;
an energy-converting structure disposed over a semiconductor structure, the energy-converting structure configured to convert first radiation into second radiation;
a second radiation reflecting structure positioned between the semiconductor structure and the energy-converting structure, wherein the second radiation reflecting structure reflects second radiation generated by the semiconductor structure back towards the semiconductor structure; and
a shell disposed over the energy-converting structure and under the semiconductor structure, the shell defining an opening through which the first radiation generated by the radiation source passes through.

2. The system of claim 1 , wherein the shell is further disposed along a side of the energy-converting structure, a side of the second radiation reflecting structure and a side of the semiconductor structure.

3. The system of claim 1 , wherein the shell is further disposed along opposing sides of the energy-converting structure, opposing sides of the second radiation reflecting structure and opposing sides of the semiconductor structure.

4. The system of claim 1 , wherein the shell includes a metal material.

5. The system of claim 1 , wherein the second radiation reflecting structure is spaced apart from the energy-converting structure.

6. The system of claim 1 , wherein the first radiation includes microwave radiation and the second radiation includes thermal radiation.

7. The system of claim 1 , wherein the second radiation reflecting structure includes a semiconductor substrate.

8. A system comprising:
a first energy-converting structure disposed over a semiconductor structure;
a thermal radiation reflecting structure arranged between the first energy-converting structure and the semiconductor structure, the thermal radiation reflecting structure physically contacting the first energy-converting structure; and
a radiation source for generating radiation toward the first energy-converting structure, and
wherein the radiation source is a microwave radiation source,
wherein the first energy-converting structure is configured to convert microwave radiation into thermal radiation, and
wherein the thermal radiation reflecting structure reflects thermal radiation generated by the semiconductor structure back towards the semiconductor structure.

9. The system of claim 8 , wherein the thermal radiation reflecting structure is transparent to the radiation and opaque to thermal radiation.

10. The system of claim 8 , wherein the first energy-converting structure has a bottom surface facing the semiconductor structure, and
wherein the thermal radiation reflecting structure completely covers the bottom surface of the first energy-converting structure.

11. The system of claim 8 , further comprising a second energy-converting structure disposed under the semiconductor structure.

12. The system of claim 11 , wherein the first energy-converting structure is spaced apart from the semiconductor structure by a first distance, and
wherein the second energy-converting structure is spaced apart from the semiconductor structure by a second distance that is different from the first distance.

13. The system of claim 11 , wherein the first energy-converting structure is spaced apart from the semiconductor structure by a first distance, and
wherein the second energy-converting structure is spaced apart from the semiconductor structure by a second distance that is the same as the first distance.

14. The system of claim 8 , wherein the first energy-converting structure includes at least one material selected from the group consisting of boron-doped silicon germanium, silicon phosphide, titanium, nickel, silicon nitride, silicon dioxide, silicon carbide, n-type doped silicon, and aluminum cap silicon carbide.

15. The system of claim 8 , further comprising a shell disposed over the first energy-converting structure and under the semiconductor structure, the shell defining an opening through which the radiation generated by the radiation source passes through.

16. A method comprising:
forming a thermal radiation reflecting structure directly on a first energy-converting structure;
providing radiation to the first energy-converting structure, wherein the thermal radiation reflecting structure is disposed between a semiconductor structure and the first energy-converting structure during the providing of the radiation to the first energy-converting structure; and
providing a second energy-converting structure proximate the semiconductor structure, wherein the first energy-converting structure is disposed over a first side of the semiconductor structure and the second energy-converting structure is disposed over a second side that is opposite the first side.

17. The method of claim 16 , wherein providing radiation to the first energy-converting structure includes applying radiation to the semiconductor structure to anneal the semiconductor structure.

18. The method of claim 16 , further comprising positioning the thermal radiation reflecting structure in a metal shell; and
positioning the semiconductor structure in the metal shell, the metal shell surrounding the thermal radiation reflecting structure and the semiconductor structure.

19. The method of claim 18 , wherein the metal shell defines an opening and wherein providing radiation to the first energy-converting structure includes providing radiation through the opening in the metal shell to the first energy-converting structure.

20. The method of claim 16 , wherein forming the thermal radiation reflecting structure directly on the first energy-converting structure includes performing an epitaxial growth process.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Tsai Chun-Hsiung
• Fang Zi-Wei
• Wang Chao-Hsiung

Classifications

• H10P95/90 Primary

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P72/0436 Primary

  mainly by radiation · CPC title

• H05B6/806

  for laboratory use · CPC title

• H05B6/6482

  combined with radiant heating, e.g. infrared heating · CPC title

• H05B6/80

  Apparatus for specific applications (stoves or ranges F24C7/02) · CPC title