Systems and methods for annealing semiconductor structures

Patent metadata

Field	Value
Publication number	US-9698026-B2
Application number	US-201615234076-A
Country	US
Kind code	B2
Filing date	Aug 11, 2016
Priority date	Oct 30, 2013
Publication date	Jul 4, 2017
Grant date	Jul 4, 2017

Abstract

Systems and methods are provided for annealing a semiconductor structure. In one embodiment, the method includes providing an energy-converting structure proximate a semiconductor structure, the energy-converting structure comprising a material having a loss tangent larger than that of the semiconductor structure; providing a heat reflecting structure between the semiconductor structure and the energy-converting structure; and providing microwave radiation to the energy-converting structure and the semiconductor structure. The semiconductor structure may include at least one material selected from the group consisting of boron-doped silicon germanium, silicon phosphide, titanium, nickel, silicon nitride, silicon dioxide, silicon carbide, n-type doped silicon, and aluminum capped silicon carbide. The heat reflecting structure may include a material substantially transparent to microwave radiation and having substantial reflectivity with respect to infrared radiation.

First claim

The invention claimed is:

1. A method comprising:
providing an energy-converting structure that is proximate a semiconductor structure and is configured to convert microwave radiation to thermal radiation;
providing a heat reflecting structure that is located between the semiconductor structure and the energy-converting structure and substantially transparent to microwave radiation and substantially reflective to thermal radiation; and
providing microwave radiation to the energy-converting structure, for the microwave radiation to be converted by the energy-converting structure to thermal radiation that heats the semiconductor structure, and for thermal radiation generated by the semiconductor structure to be reflected by the heat reflecting structure back to the semiconductor structure.

2. The method of claim 1 , wherein the heat reflecting structure has a reflectivity of no less than about 95% with respect to infrared radiation.

3. The method of claim 1 , further comprising:
adjusting a distance between the heat reflecting structure and the semiconductor structure to improve an infrared radiation reflection to the semiconductor structure.

4. The method of claim 1 , wherein the providing of the heat reflecting structure comprises forming the heat reflecting structure on the energy-converting structure.

5. The method of claim 4 , wherein the forming comprises epitaxially growing the heat reflecting structure on the energy-converting structure.

6. The method of claim 1 , wherein the energy-converting structure is larger than the semiconductor structure.

7. The method of claim 1 , wherein the energy-converting structure includes at least one material selected from the group consisting of boron-doped silicon germanium, silicon phosphide, titanium, nickel, silicon nitride, silicon dioxide, silicon carbide, n-type doped silicon, and aluminum capped silicon carbide.

8. The method of claim 1 , wherein the energy-converting structure is a first energy-converting structure, and wherein the method further includes:
providing a second energy-converting structure at an opposite side of the semiconductor structure from the heat reflecting structure.

9. The method of claim 1 , further comprising:
keeping a temperature of the semiconductor structure within a range of about 300° C. to about 600° C. during the providing of the microwave radiation.

10. The method of claim 9 , wherein the providing of microwave radiation is for a time period of about 40 seconds to about 300 seconds.

11. The method of claim 9 , wherein the heating of the semiconductor structure anneals the semiconductor structure.

12. A system comprising:
an energy-converting structure that is proximate a semiconductor structure and is configured to convert microwave radiation to thermal radiation;
a heat reflecting structure that is located between the semiconductor structure and the energy-converting structure and is substantially transparent to microwave radiation and substantially reflective to thermal radiation; and
a microwave source for generating microwave radiation to be converted by the energy-converting structure to thermal radiation that heats the semiconductor structure, and for thermal radiation generated by the semiconductor structure to be reflected by the heat reflecting structure back to the semiconductor structure.

13. The system of claim 12 , wherein the heat reflecting structure is formed on the energy-converting structure.

14. The system of claim 12 , wherein the energy-converting structure is larger than the semiconductor structure.

15. The system of claim 12 , wherein the energy-converting structure is a first energy-converting structure, and wherein the system further includes:
a second energy-converting structure at an opposite side of the semiconductor structure from the heat reflecting structure.

16. The system of claim 12 , wherein the heating of the semiconductor structure is configured to anneal the semiconductor structure.

17. A system comprising:
an energy-converting structure that is located proximate a semiconductor structure and comprises at least one material selected from the group consisting of boron-doped silicon germanium, silicon phosphide, titanium, nickel, silicon nitride, silicon dioxide, silicon carbide, n-type doped silicon, and aluminum capped silicon carbide;
a heat reflecting structure that is located between the semiconductor structure and the energy converting structure and is substantially transparent to microwave radiation and is substantially reflective to thermal radiation; and
a microwave source configured to generate microwave radiation toward the energy-converting structure, for the microwave radiation to be converted by the energy-converting structure to thermal radiation that heats the semiconductor structure, and for thermal radiation generated by the semiconductor structure to be reflected by the heat reflecting structure back to the semiconductor structure.

18. The system of claim 17 , wherein the heat reflecting structure is formed on the energy-converting structure.

19. The system of claim 17 , wherein the energy-converting structure is a first energy-converting structure, and wherein the system further includes:
a second energy-converting structure that is at an opposite side of the semiconductor structure from the heat reflecting structure and that comprises at least one material selected from the group consisting of boron-doped silicon germanium, silicon phosphide, titanium, nickel, silicon nitride, silicon dioxide, silicon carbide, n-type doped silicon, and aluminum capped silicon carbide.

20. The system of claim 17 , wherein the heating of the semiconductor structure anneals the semiconductor structure.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Tsai Chun-Hsiung
• Fang Zi-Wei
• Wang Chao-Hsiung

Classifications

• H10P95/90 Primary

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P72/0436 Primary

  mainly by radiation · CPC title

• H05B6/806

  for laboratory use · CPC title

• H05B6/80

  Apparatus for specific applications (stoves or ranges F24C7/02) · CPC title

• H05B6/6491

  combined with the use of susceptors (H05B6/80 and subgroups takes precedence) · CPC title