Three-dimensional semiconductor devices and fabricating methods thereof
US-10002877-B2 · Jun 19, 2018 · US
Fabrication of phase change memory cell in integrated circuit
US10840447B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10840447-B2 |
| Application number | US-201916299313-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 12, 2019 |
| Priority date | Mar 12, 2019 |
| Publication date | Nov 17, 2020 |
| Grant date | Nov 17, 2020 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A phase change memory (PCM) cell in an integrated circuit and a method of fabricating it involve depositing a layer of PCM material on a surface of a dielectric, and patterning the layer of PCM material into a plurality of PCM blocks. Heater material is formed on both sidewalls of each of the plurality of the PCM blocks to form a plurality of PCM cells. Each of the plurality of the PCM blocks and the heater material on both the sidewalls represents a PCM cell. An additional layer of the dielectric is deposited above and between the plurality of the PCM cells, and trenches are formed in the dielectric. Trenches are formed in contact with each side of each of the plurality of the PCM cells. Metal is deposited in each of the trenches. Current flow in the metal heats the heater material of one of the PCM cells.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of performing fabrication of a phase change memory (PCM) cell in an integrated circuit, the method comprising: depositing a layer of PCM material on a surface of a dielectric; patterning the layer of PCM material into a plurality of PCM blocks that are separated from each other; forming heater material on both sidewalls of each of the plurality of the PCM blocks to form a plurality of PCM cells, wherein each of the plurality of the PCM blocks in combination with the heater material on both the sidewalls represents a PCM cell; depositing an additional layer of the dielectric above and between the plurality of the PCM cells; forming trenches in the dielectric, wherein the forming the trenches includes forming a trench in contact with each side of each of the plurality of the PCM cells; and depositing metal in each of the trenches such that current flow in the metal in contact with one of the plurality of PCM cells heats the heater material of the one of the plurality of PCM cells. 2. The method according to claim 1 , further comprising conformally depositing a layer of the heater material on the plurality of the PCM blocks and the dielectric following the patterning of the layer of the PCM material. 3. The method according to claim 2 , wherein the forming the heater material on both of the sidewalls of each of the plurality of the PCM blocks includes etching the heater material from horizontal surfaces of the PCM blocks and the dielectric. 4. The method according to claim 1 , further comprising forming first metal wires within the dielectric prior to the depositing the layer of the PCM material on the surface of the dielectric. 5. The method according to claim 4 , wherein the forming the trenches in the dielectric includes forming each of the trenches from the surface of the dielectric to one of the first metal wires. 6. The method according to claim 5 , wherein each of the trenches includes a via portion directly above the corresponding one of the first metal wires and a second metal wire portion above the via portion. 7. The method according to claim 6 , wherein the via portion is in contact with one of the plurality of the PCM cells. 8. The method according to claim 1 , wherein the forming the trenches in the dielectric includes forming metal wire portions such that each metal wire portion is in contact with one of the plurality of the PCM cells. 9. The method according to claim 8 , wherein the forming the trenches in the dielectric additionally includes forming a via through the dielectric. 10. The method according to claim 1 , further comprising forming a capping layer.
Assignees
Inventors
Classifications
Electricity · mapped topic
- H01L45/1675Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Patent family
Related publications grouped by family.
External sources
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US10840447B2 cover?
- A phase change memory (PCM) cell in an integrated circuit and a method of fabricating it involve depositing a layer of PCM material on a surface of a dielectric, and patterning the layer of PCM material into a plurality of PCM blocks. Heater material is formed on both sidewalls of each of the plurality of the PCM blocks to form a plurality of PCM cells. Each of the plurality of the PCM blocks a…
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification H01L45/1675. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 17 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).