Power stage device with carrier frame for power stage module and integrated inductor

Patent metadata

Field	Value
Publication number	US-10818646-B2
Application number	US-201916274776-A
Country	US
Kind code	B2
Filing date	Feb 13, 2019
Priority date	Feb 13, 2019
Publication date	Oct 27, 2020
Grant date	Oct 27, 2020

Abstract

A power device includes a frame having an electrically insulative material, an opening in the electrically insulative material, and an electrical conductor extending through the electrically insulative material. A power stage module fixed in the opening has an output terminal at a first side of the power stage module, and a power terminal, a ground terminal and a plurality of input/output (I/O) terminals at a second side of the power stage module opposite the first side. A passive component has a first terminal attached to the output terminal of the power stage module and a second terminal attached to the electrical conductor of the frame. The passive component has a larger footprint than the power stage module. The frame expands the footprint of the power stage module to accommodate mounting of the passive component to the power device. The frame has a lower interconnect density than the power stage module.

First claim

What is claimed is:

1. A power device, comprising:
a frame comprising an electrically insulative material, an opening in the electrically insulative material, and an electrical conductor extending through the electrically insulative material;
a power stage module fixed in the opening in the electrically insulative material and comprising an output terminal at a first side of the power stage module, and a power terminal, a ground terminal and a plurality of input/output (I/O) terminals at a second side of the power stage module opposite the first side; and
a passive component comprising a first terminal attached to the output terminal of the power stage module and a second terminal attached to the electrical conductor of the frame,
wherein the passive component has a larger footprint than the power stage module,
wherein the frame expands the footprint of the power stage module to accommodate mounting of the passive component to the power device,
wherein the frame has a lower interconnect density than the power stage module.

2. The power device of claim 1 , wherein the only electrical connection provided by the frame is a vertical electrical connection for the second terminal of the passive component from a top surface of the frame to a bottom surface of the frame.

3. The power device of claim 1 , wherein the frame is a first printed circuit board (PCB), wherein the electrical conductor of the frame comprises one or more plated through holes extending from a top surface of the first PCB to a bottom surface of the first PCB, and wherein the first PCB is devoid of metal traces running in a direction perpendicular to the top and the bottom surfaces of the first PCB.

4. The power device of claim 3 , wherein the power stage module comprises a second PCB and at least one semiconductor die embedded in the second PCB between top and bottom surfaces of the second PCB, wherein the second PCB comprises at least two layers with micro-via connections and metal traces which provide electrical connection to the at least one semiconductor die embedded within the second PCB, and wherein at least some of the metal traces of the second PCB run in a direction perpendicular to the top and the bottom surfaces of the second PCB.

5. The power device of claim 4 , wherein the second PCB has a line/space (L/S) ratio of 75 μm/75 μm or less, and wherein the first PCB has a L/S ratio of 150 μm/150 μm or greater.

6. The power device of claim 4 , wherein the second PCB is fixed in the opening in the first PCB by glue, mechanical fixing or solder.

7. The power device of claim 1 , wherein the frame is a molded leadframe comprising a plurality of leads embedded in a mold compound, and wherein the electrical conductor of the frame comprises one or more leads of the plurality of leads which are not covered by the mold compound at both a top surface of the molded leadframe and a bottom surface of the molded leadframe.

8. The power device of claim 7 , wherein the power stage module is embedded in the mold compound of the molded leadframe, wherein the output terminal at the first side of the power stage module is not covered by the mold compound, and wherein the power terminal, the ground terminal and the plurality of I/O terminals at the second side of the power stage module are not covered by the mold compound.

9. The power device of claim 1 , wherein the electrically insulative material of the frame is mold compound, wherein the electrical conductor of the frame is a metal block embedded in the mold compound, and wherein the metal block is not covered by the mold compound at both a top surface of the frame and a bottom surface of the frame.

10. The power device of claim 9 , wherein the power stage module is embedded in the mold compound, wherein the output terminal at the first side of the power stage module is not covered by the mold compound, and wherein the power terminal, the ground terminal and the plurality of I/O terminals at the second side of the power stage module are not covered by the mold compound.

11. The power device of claim 9 , wherein the metal block is a copper block comprising copper or a copper alloy.

12. The power device of claim 1 , wherein the power stage module comprises a first power transistor die, a second power transistor die and a driver die embedded in a PCB and configured as a half bridge having a switched node output electrically connected to the output terminal of the power stage module, and wherein the passive component is an inductor that electrically connects the switched node output to the electrical conductor of the frame.

13. A power system, comprising:
a PCB; and
a power device attached to the PCB, the power device comprising:
a frame comprising an electrically insulative material, an opening in the electrically insulative material, and an electrical conductor extending through the electrically insulative material and attached to one or more metal pads at a first side of the PCB;
a power stage module fixed in the opening in the electrically insulative material and comprising an output terminal at a side of the power stage module facing away from the PCB, and a power terminal, a ground terminal and a plurality of input/output (I/O) terminals at a side of the power stage module facing the PCB and attached to respective additional metal pads at the first side of the PCB; and
a passive component attached to the power device at a side of the power device facing away from the PCB, the passive component comprising a first terminal attached to the output terminal of the power stage module and a second terminal attached to the electrical conductor of the frame so that the output terminal of the power stage module is electrically connected to the one or more metal pads at the first side of the PCB by the passive component and the electrical conductor of the frame,
wherein the passive component has a larger footprint than the power stage module,
wherein the frame expands the footprint of the power stage module to accommodate mounting of the passive component to the power device,
wherein the frame has a lower interconnect density than the power stage module.

14. A method of manufacturing a power device, the method comprising:
forming a frame comprising an electrically insulative material, an opening in the electrically insulative material, and an electrical conductor extending through the electrically insulative material;
fixing a power stage module in the opening in the electrically insulative material, the power stage module comprising an output terminal at a first side of the power stage module, and a power terminal, a ground terminal and a plurality of input/output (I/O) terminals at a second side of the power stage module opposite the first side; and
attaching a first terminal of a passive component to the output terminal of the power stage module and a second terminal of the passive component to the electrical conductor of the frame,
wherein the passive component has a larger footprint than the power stage module,
wherein the frame expands the footprint of the power stage module to accommodate mounting of the passive component to the power device,
wherein the frame has a lower interconnect density than the power stage module.

15. The method of claim 14 , wherein forming the frame comprises:
forming a first printed circuit board (PCB) having one or more plated through holes extending from a top surface of the first PCB to a bottom surface of the first PCB, the one or more plated through holes forming the electrical conductor of the frame,
wherein the first PCB is devoid of metal traces running in a directio

Assignees

• Infineon Technologies Ag

Inventors

• Palm Petteri
• Cho Eung San

Classifications

• H10W74/114

  by a substrate and the encapsulations · CPC title

• H10W74/019 Primary

  using temporary auxiliary substrates (H10W74/017 takes precedence) · CPC title

• H10W74/016

  using moulds · CPC title

• H10W70/685

  comprising multiple insulating layers · CPC title

• H10W70/614

  the multiple chips being integrally enclosed · CPC title