Film-forming method and film-forming apparatus

Patent metadata

Field	Value
Publication number	US-10811264-B2
Application number	US-201816111792-A
Country	US
Kind code	B2
Filing date	Aug 24, 2018
Priority date	Aug 30, 2017
Publication date	Oct 20, 2020
Grant date	Oct 20, 2020

Abstract

There is provided a film-forming method, including: a pre-coating process of supplying a first gas containing silicon into a processing container in which a substrate is not loaded, and coating surfaces of members installed inside the processing container, including a mounting table configured to mount the substrate thereon, with a film made of silicon; subsequently, a mounting process of mounting the substrate on the mounting table so that a back surface of the substrate is in contact with the film made of silicon; and subsequently, a film-forming process of supplying a second gas containing an organometallic compound into the processing container, and forming a film made of a metal constituting the organometallic compound on the substrate.

First claim

What is claimed is:

1. A film-forming method, comprising:
a pre-coating process of supplying a pre-coating gas and a first gas containing silicon into a processing container in which a substrate is not loaded, and coating surfaces of members installed inside the processing container, including a mounting table configured to mount the substrate thereon, with a film made of silicon;
subsequently, a mounting process of mounting the substrate on the mounting table so that a back surface of the substrate is in contact with the film made of silicon; and
subsequently, a film-forming process of supplying a second gas containing an organometallic compound into the processing container, and forming a film made of a metal constituting the organometallic compound on the substrate,
wherein the pre-coating process includes:
a first pre-coating process of supplying the pre-coating gas, which is a compound different from the organometallic compound and contains the metal constituting the organometallic compound, into the processing container to form an underlying film containing the metal on the members installed inside the processing container; and
subsequently, a second pre-coating process of supplying the first gas into the processing container to form a film made of the silicon so as to be laminated on the underlying film.

2. The method of claim 1 , wherein the film-forming process further includes supplying the first gas into the processing container to form a film containing the metal and the silicon on the substrate.

3. The method of claim 2 , wherein the film-forming process further includes supplying a third gas as a compound containing nitrogen into the processing container to form a film containing the metal, the silicon, and the nitrogen on the substrate.

4. The method of claim 1 , wherein the first pre-coating process is performed in a state where an internal temperature of the processing container is set to a first temperature, and the second pre-coating process is performed in a state where the internal temperature of the processing container is set to a second temperature that is lower than the first temperature.

5. The method of claim 4 , wherein the first temperature is equal to or higher than 400 degrees C., and the second temperature is equal to or lower than 300 degrees C.

6. The method of claim 1 , wherein the pre-coating gas is composed of a chloride of the metal, and the second gas does not contain chlorine as a constituent.

7. The method of claim 1 , wherein the metal is titanium.

8. The method of claim 1 , wherein the film made of silicon is an amorphous silicon film.

Assignees

• Tokyo Electron Ltd

Inventors

• Wagatsuma Yuichiro
• Kaneko Miyako
• Noro Naotaka

Classifications

• H10P14/418

  the conductive layers comprising transition metals · CPC title

• H10P14/43 Primary

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H10P14/412

  Deposition of metallic or metal-silicide materials · CPC title

• H10P14/432

  using selective deposition · CPC title

• C23C16/45525

  Atomic layer deposition [ALD] · CPC title