Tunable temperature controlled substrate support assembly
US-2016027678-A1 · Jan 28, 2016 · US
US10790180B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10790180-B2 |
| Application number | US-201916576645-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 19, 2019 |
| Priority date | Dec 2, 2013 |
| Publication date | Sep 29, 2020 |
| Grant date | Sep 29, 2020 |
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Official abstract text for this publication.
Electrostatic chucks with variable pixelated magnetic field are described. For example, an electrostatic chuck (ESC) includes a ceramic plate having a front surface and a back surface, the front surface for supporting a wafer or substrate. A base is coupled to the back surface of the ceramic plate. A plurality of electromagnets is disposed in the base, the plurality of electromagnets configured to provide pixelated magnetic field tuning capability for the ESC.
Opening claim text (preview).
What is claimed is: 1. A semiconductor processing system, comprising: a chamber coupled to an evacuation device, a gas inlet device, a plasma ignition device, and a detector; a computing device coupled with the plasma ignition device; a voltage source coupled with a sample holder comprising an electrostatic chuck (ESC), the ESC disposed in the chamber and comprising: a ceramic plate having a front surface and a back surface, the front surface for supporting a wafer or substrate; a base coupled to the back surface of the ceramic plate; and a plurality of electromagnets disposed in the base, the plurality of electromagnets configured to provide pixelated magnetic field tuning capability for the ESC; and an electrical source, wherein each of the plurality of electromagnets is independently coupled to the electrical source by a corresponding electrical wiring. 2. The semiconductor processing system of claim 1 , wherein the base of the ESC is coupled to the back surface of the ceramic plate of the ESC by a perforated bonding layer, the perforated bonding layer having openings to accommodate the plurality of electromagnets of the ESC. 3. The semiconductor processing system of claim 1 , wherein the ceramic plate of the ESC comprises one or more electrical heaters housed therein. 4. The semiconductor processing system of claim 1 , wherein the ceramic plate of the ESC comprises an RF electrode housed therein. 5. The semiconductor processing system of claim 1 , wherein the base of the ESC is a cooling base. 6. The semiconductor processing system of claim 1 , wherein each of the plurality of electromagnets of the ESC is independently controllable. 7. The semiconductor processing system of claim 1 , wherein the plurality of electromagnets is a plurality of discrete electromagnets. 8. The semiconductor processing system of claim 7 , wherein the plurality of discrete electromagnets comprises discrete electromagnets arranged in a plurality of concentric circles. 9. The semiconductor processing system of claim 8 , wherein each of the plurality of concentric circles comprises a plurality of the plurality of discrete electromagnets.
Details of electrostatic chucks · CPC title
Workpiece holder · CPC title
Magnetic control means · CPC title
Electricity · mapped topic
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