Mapping intermediate material properties to target properties to screen materials

Patent metadata

Field	Value
Publication number	US-10776560-B2
Application number	US-201916691306-A
Country	US
Kind code	B2
Filing date	Nov 21, 2019
Priority date	Sep 26, 2013
Publication date	Sep 15, 2020
Grant date	Sep 15, 2020

Abstract

A system for evaluating candidate materials for fabrication of integrated circuits includes a data processor coupled to a memory. Roughly described, the data processor is configured to: calculate and write to a first database, for each of a plurality of candidate materials, values for each property in a set of intermediate properties; calculate and write to a second database, values for a selected target property for various combinations of values for the intermediate properties and values describing candidate environments; and for a particular candidate material and a particular environment in combination, determine values for the intermediate properties for the candidate material by reference to the first database, and determine the value of the target property for the candidate material by querying the second database with, in combination, (1) the determined intermediate property values of the candidate material and (2) a value or values describing the particular environment.

First claim

The invention claimed is:

1. A method for fabricating an integrated circuit comprising:
providing a computer system with a first database relating each of a plurality of materials for an integrated circuit, with corresponding values for intermediate material properties including bandgap Eg and/or effective mass m*, each of the intermediate material properties being properties which are unaffected by the integrated circuit environment in which the material is used;
providing the computer system a second database relating each of a plurality of combinations of values for the intermediate properties and values describing potential environments for the material in an integrated circuit, with corresponding target material properties including Band-To-Band Tunneling (BTBT) and Direct Source-to-Drain Tunneling (DSDT);
for each of a plurality of candidate materials, the computer system determining values for each of the intermediate material properties by querying the first database;
for each of a plurality of candidate integrated circuit environments, the computer system determining a plurality of target property values of the target property for each particular one of the candidate materials by querying the second database with, in combination, (a) the determined values for the intermediate material properties for the candidate material and (b) values describing each of the candidate integrated circuit environments; and
fabricating an integrated circuit device using a selected one of the candidate materials selected in dependence upon the plurality of target property values, and a provided layout.

2. The method of claim 1 , wherein a particular one of the intermediate properties for a particular one of the candidate materials is not characterized in the first database,
and wherein determining a value for the particular intermediate material property comprises combining the value of the intermediate property for at least two materials that are characterized in the first database.

3. The method of claim 1 , wherein the combination of (a) the determined values for a particular one of the intermediate material properties for a particular one of the candidate materials and (b) values describing a particular one of the candidate integrated circuit environments, is not characterized in the second database,
and wherein determining a plurality of target property values of the target property for the particular candidate material comprises combining the values of the target properties for at least two combinations of (a) values for the intermediate material properties for candidate materials and (b) values describing candidate environments, which combinations are characterized in the second database.

4. The method of claim 1 , wherein the values describing candidate integrated circuit environments include aspects of a design rule database.

5. The method of claim 1 , further comprising identifying the selected candidate material as one of the candidate materials having a combination of target property values considered to optimize a combination of transistor performance characteristics including members of the group consisting of driving current strength, switching speed, capacitance, reliability, variability, leakage current, and power consumption.

6. A computer readable medium having stored thereon in a non-transitory manner:
a first database relating each of a plurality of materials for an integrated circuit, with corresponding values for intermediate material properties including bandgap Eg and/or effective mass m*, each of the intermediate material properties being properties which are unaffected by the integrated circuit environment in which the material is used;
a second database relating each of a plurality of combinations of values for the intermediate properties and values describing potential environments for the material in an integrated circuit, with corresponding target material properties including Band-To-Band Tunneling (BTBT) and Direct Source-to-Drain Tunneling (DSDT); and
a plurality of software code portions defining logic for:
for each of a plurality of candidate materials, determining values for each of the intermediate material properties by querying the first database;
for each of a plurality of candidate integrated circuit environments, determining a plurality of target property values of the target property for each particular one of the candidate materials by querying the second database with, in combination, (a) the determined values for the intermediate material properties for the candidate material and (b) values describing each of the candidate integrated circuit environments; and
developing an integrated circuit device using a selected one of the candidate materials selected in dependence upon the plurality of target property values, and a provided layout.

7. The medium of claim 6 , wherein a particular one of the intermediate properties for a particular one of the candidate materials is not characterized in the first database,
and wherein determining a value for the particular intermediate material property comprises combining the value of the intermediate property for at least two materials that are characterized in the first database.

8. The medium of claim 6 , wherein the combination of (a) the determined values for a particular one of the intermediate material properties for a particular one of the candidate materials and (b) values describing a particular one of the candidate integrated circuit environments, is not characterized in the second database,
and wherein determining a plurality of target property values of the target property for the particular candidate material comprises combining the values of the target properties for at least two combinations of (a) values for the intermediate material properties for candidate materials and (b) values describing candidate environments, which combinations are characterized in the second database.

9. The medium of claim 6 , wherein the values describing candidate integrated circuit environments include aspects of a design rule database.

10. The medium of claim 6 , further comprising identifying the selected candidate material as one of the candidate materials having a combination of target property values considered to optimize a combination of transistor performance characteristics including members of the group consisting of driving current strength, switching speed, capacitance, reliability, variability, leakage current, and power consumption.

11. A system for fabricating an integrated circuit,
for use with a first database relating each of a plurality of materials for an integrated circuit, with corresponding values for intermediate material properties including bandgap Eg and/or effective mass m*, each of the intermediate material properties being properties which are unaffected by the integrated circuit environment in which the material is used,
for use further with a second database relating each of a plurality of combinations of values for the intermediate properties and values describing potential environments for the material in an integrated circuit, with corresponding target material properties including Band-To-Band Tunneling (BTBT) and Direct Source-to-Drain Tunneling (DSDT), the system comprising:
a memory;
a data processor coupled to the memory, the data processor configured to:
for each of a plurality of candidate materials, determine values for each of the intermediate material properties by querying the first database;
for each of a plurality of candidate integrated circuit environments, determine a plurality of target property values of the target property for each particular one of the candidate m

Assignees

• Synopsys Inc

Inventors

• Moroz Victor
• Smith Stephen Lee
• Oh Yong-Seog
• Shaughnessy-Culver Michael C
• Liu Jie
• Ma Terry Sylvan Kam-Chiu

Classifications

• G06F30/20 Primary

  Design optimisation, verification or simulation (optimisation, verification or simulation of circuit designs G06F30/30) · CPC title

• G06F16/245

  Query processing · CPC title

• G06F30/398 Primary

  Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM] (optical proximity correction [OPC] design processes G03F1/36) · CPC title

• G06F30/36

  Circuit design at the analogue level · CPC title