Multi-scale simulation including first principles band structure extraction

Patent metadata

Field	Value
Publication number	US-2016335381-A1
Application number	US-201615224165-A
Country	US
Kind code	A1
Filing date	Jul 29, 2016
Priority date	Sep 26, 2013
Publication date	Nov 17, 2016
Grant date	—

Abstract

Electronic design automation modules include a first tool and a second tool. The first tool includes ab initio simulation procedures configured to use input parameters to produce information about a band structure of a simulated material on a first simulation scale specified at least in part by the input parameters. The second tool includes a simulation procedure configured to used information about the band structure of the simulated material produced by the first tool to extract parameters on a second simulation scale larger than the first simulation scale.

First claim

1 . An electronic design automation system, comprising:
a data processor; storage accessible by the processor, and storing computer program instructions executable by the processor, the instructions including:
a first tool including an ab initio simulation procedure configured to use input parameters to produce information about a band structure of a simulated material on a first simulation scale specified at least in part by the input parameters; and
a second tool including a simulation procedure configured to use information about the band structure of the simulated material produced by the first tool to extract parameters on a second simulation scale larger than the first simulation scale.

2 . The system of claim 1 , the instructions including control procedures to iterate between the first tool and the second tool.

3 . The system of claim 1 , wherein the second tool comprises a drift-diffusion simulation procedure.

4 . The system of claim 1 , wherein the second tool comprises a wave function formalism quantum transport simulation procedure.

5 . The system of claim 1 , wherein the second tool comprises a Wigner function quantum transport simulation procedure.

6 . The system of claim 1 , wherein the second tool comprises a Boltzmann transport simulation procedure.

7 . The system of claim 1 , wherein said parameters on a second simulation scale include a device performance metric.

8 . The system of claim 1 , wherein said parameters on a second simulation scale include parameters of a charge distribution.

9 . The system of claim 1 , wherein said parameters on a second simulation scale include parameters of a current-voltage curve.

10 . A computer-implemented method comprising:
executing an ab initio simulation procedure using input parameters to produce information about a band structure of a simulated material on a first simulation scale, the simulated material specified at least in part by the input parameters; and executing a second simulation procedure using information about the band structure of the simulated material produced in the ab initio simulation procedure to extract parameters on a second simulation scale larger than the first simulation scale.

11 . The method of claim 10 , including iterating between the ab initio simulation procedure and the second simulation procedure.

12 . The method of claim 10 , wherein the second simulation procedure comprises a drift-diffusion simulation procedure.

13 . The method of claim 10 , wherein the second simulation procedure comprises a wave function formalism quantum transport simulation procedure.

14 . The method of claim 10 , wherein the second simulation procedure comprises a Wigner function quantum transport simulation procedure.

15 . The method of claim 10 , wherein the second simulation procedure comprises a Boltzmann transport simulation procedure.

16 . The method of claim 10 , wherein said parameters on a second simulation scale include a device performance metric.

17 . The method of claim 10 , wherein said parameters on a second simulation scale include parameters of a charge distribution.

18 . The method of claim 10 , wherein said parameters on a second simulation scale include parameters of a current-voltage curve.

19 . An electronic design automation system, comprising:
a data processor; and storage accessible by the processor, and storing computer program instructions executable by the processor, the instructions including:
a first tool including a procedure configured to use input parameters to produce information about a band structure of a simulated material on a first simulation scale specified at least in part by the input parameters by solving Schrodinger's equation based on positions and types of atoms; and
a second tool including a simulation procedure configured to use information about the band structure of the simulated material produced by the first tool to extract parameters on a second simulation scale larger than the first simulation scale.

20 . The system of claim 19 , wherein the second tool comprises a drift-diffusion simulation procedure.

21 . The system of claim 19 , wherein the second tool comprises a wave function formalism quantum transport simulation procedure.

22 . The system of claim 19 , wherein the second tool comprises a Wigner function quantum transport simulation procedure.

23 . The system of claim 19 , wherein the second tool comprises a Boltzmann transport simulation procedure.

24 . The system of claim 19 , wherein said parameters on a second simulation scale include a device performance metric.

25 . The system of claim 19 , wherein said parameters on a second simulation scale include parameters of a charge distribution.

26 . The system of claim 19 , wherein said parameters on a second simulation scale include parameters of a current-voltage curve.

27 . A computer-implemented method comprising:
executing a first simulation procedure using input parameters to produce information about a band structure of a simulated material on a first simulation scale specified at least in part by the input parameters, by solving a Schrodinger's equation based on positions and types of atoms; and executing a second simulation procedure using information about the band structure of the simulated material produced in the first simulation procedure to extract parameters on a second simulation scale larger than the first simulation scale.

28 . The method of claim 27 , wherein the second simulation procedure comprises a drift-diffusion simulation procedure.

29 . The method of claim 27 , wherein the second simulation procedure comprises a wave function formalism quantum transport simulation procedure.

30 . The method of claim 27 , wherein the second simulation procedure comprises a Wigner function quantum transport simulation procedure.

31 . The method of claim 27 , wherein the second simulation procedure comprises a Boltzmann transport simulation procedure.

32 . The method of claim 27 , wherein said parameters on a second simulation scale include a device performance metric.

33 . The method of claim 27 , wherein said parameters on a second simulation scale include parameters of a charge distribution.

34 . The method of claim 27 , wherein said parameters on a second simulation scale include parameters of a current-voltage curve.

Assignees

• Synopsys Inc

Inventors

• Liu Jie
• Moroz Victor
• Shaughnessy-Culver Michael C
• Smith Stephen Lee
• Oh Yong-Seog
• Balasingam Pratheep
• Ma Terry Sylvan Kam-Chiu

Classifications

• G06F30/327

  Logic synthesis; Behaviour synthesis, e.g. mapping logic, HDL to netlist, high-level language to RTL or netlist · CPC title

• G06F30/20

  Design optimisation, verification or simulation (optimisation, verification or simulation of circuit designs G06F30/30) · CPC title

• G06F30/367

  Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods · CPC title

• G06F30/33 Primary

  Design verification, e.g. functional simulation or model checking · CPC title

• G06F30/23

  using finite element methods [FEM] or finite difference methods [FDM] · CPC title