Method for manufacturing rear surface incident type light receiving device including an electrode and characteristic inspection thereof

Patent metadata

Field	Value
Publication number	US-10746592-B2
Application number	US-201715718452-A
Country	US
Kind code	B2
Filing date	Sep 28, 2017
Priority date	Mar 9, 2017
Publication date	Aug 18, 2020
Grant date	Aug 18, 2020

Abstract

According to the present invention, a method for manufacturing a rear surface incident type light receiving device including a substrate, a light receiving unit formed on a surface of the substrate and an electrode formed on the light receiving unit and electrically connected to the light receiving unit includes a first step of performing, after formation of a part of the electrode, a characteristic inspection of the rear surface incident type light receiving device by applying a probe to a part of the electrode and a second step of reducing an area of the electrode in a plan view.

First claim

The invention claimed is:

1. A method for manufacturing a rear surface incident type light receiving device including: a substrate; a light receiving unit formed on a surface of the substrate; and an electrode formed on the light receiving unit and electrically connected to the light receiving unit,
the method for manufacturing comprising:
a first step of performing, after formation of a part of the electrode, a characteristic inspection of the rear surface incident type light receiving device by applying a probe to a part of the electrode; and
after performing the first step, performing a second step of reducing an area of the electrode in a plan view.

2. The method for manufacturing the rear surface incident type light receiving device according to claim 1 , wherein an outermost diameter in a plan view of the electrode obtained before the second step is 40 μm to 100 μm, and the outermost diameter in a plan view of the electrode obtained after the second step is 5 μm to 20 μm.

3. The method for manufacturing the rear surface incident type light receiving device according to claim 1 , wherein a lowermost layer among layers forming the electrode is a mirror electrode and the mirror electrode reflects light incident from a rear surface of the substrate.

4. The method for manufacturing the rear surface incident type light receiving device according to claim 3 , wherein the mirror electrode is formed of a Ti layer and an Au layer that are formed in this order from a bottom, and a thickness of the Ti layer is 10 Å to 100 Å.

5. The method for manufacturing the rear surface incident type light receiving device according to claim 3 , wherein the area of the mirror electrode is reduced in the second step.

6. The method for manufacturing the rear surface incident type light receiving device according to claim 5 , further comprising a step of forming, as layers forming the electrode, a plating power feeding layer and a plating layer in this order, above the mirror electrode, the step being performed between the first step and the second step,
wherein the plating layer is formed by an electrolytic plating method using Au as a plating material and using the plating power feeding layer as an electrode, and the plating layer is an uppermost layer of the electrode, and
in the second step, the plating power feeding layer and the mirror electrode are etched.

Assignees

• Mitsubishi Electric Corp

Inventors

• Nakajima Yasuo

Classifications

• H10P74/207

  Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics · CPC title

• H10P74/23

  characterised by multiple measurements, corrections, marking or sorting processes · CPC title

• H10F77/206

  for devices having potential barriers · CPC title

• H10F30/2255

  in which the active layers form heterostructures, e.g. SAM structures · CPC title

• C25D7/08 Primary

  Mirrors; Reflectors · CPC title