Rear surface incident type light receiving device comprising an uppermost part of an electrode with a larger diameter than lowermost part of the electrode

Patent metadata

Field	Value
Publication number	US-11339494-B2
Application number	US-202016888238-A
Country	US
Kind code	B2
Filing date	May 29, 2020
Priority date	Mar 9, 2017
Publication date	May 24, 2022
Grant date	May 24, 2022

Abstract

According to the present invention, a method for manufacturing a rear surface incident type light receiving device including a substrate, a light receiving unit formed on a surface of the substrate and an electrode formed on the light receiving unit and electrically connected to the light receiving unit includes a first step of performing, after formation of a part of the electrode, a characteristic inspection of the rear surface incident type light receiving device by applying a probe to a part of the electrode and a second step of reducing an area of the electrode in a plan view.

First claim

The invention claimed is:

1. A rear surface incident type light receiving device comprising:
a substrate;
a light receiving unit formed on a surface of the substrate; and
an electrode formed on the light receiving unit and electrically connected to the light receiving unit,
wherein an outermost diameter of a surface of an uppermost part of the electrode is larger than an outermost diameter of a surface of a lowermost part of the electrode,
the outermost diameter of the surface of the lowermost part of the electrode is 5 μm to 20 μm, and
the outermost diameter of the surface of the uppermost part of the electrode is 40 μm to 100 μm.

2. The rear surface incident type light receiving device according to claim 1 , wherein a lowermost layer among layers forming the electrode is a mirror electrode, and the mirror electrode reflects light incident from a rear surface of the substrate.

3. A rear surface incident type light receiving device comprising:
a substrate;
a light receiving unit formed on a surface of the substrate; and
an electrode formed on the light receiving unit and electrically connected to the light receiving unit,
wherein an outermost diameter of a surface of an uppermost part of the electrode is larger than an outermost diameter of a surface of a lowermost part of the electrode,
a lowermost layer among layers forming the electrode is a mirror electrode, and the mirror electrode reflects light incident from a rear surface of the substrate, and
the mirror electrode is formed of a Ti layer and an Au layer that are formed in this order from a bottom, and a thickness of the Ti layer is 10 Å to 100 Å.

4. A rear surface incident type light receiving device comprising:
a substrate;
a light receiving unit formed on a surface of the substrate; and
an electrode formed on the light receiving unit and electrically connected to the light receiving unit, wherein
an outermost diameter of a surface of an uppermost part of the electrode is larger than an outermost diameter of a surface of a lowermost part of the electrode,
a lowermost layer among layers forming the electrode is a mirror electrode, and the mirror electrode reflects light incident from a rear surface of the substrate,
a plating power feeding layer, a first plating layer, and a second plating layer are formed above the mirror electrode in this order as layers forming the electrode,
the first plating layer and the second plating layer are each formed using Au as a plating material, and
the second plating layer is an uppermost layer of the electrode.

5. A rear surface incident type light receiving device comprising:
a substrate;
a light receiving unit formed on a surface of the substrate; and
an electrode formed on the light receiving unit and electrically connected to the light receiving unit, wherein
an outermost diameter of a surface of an uppermost part of the electrode is larger than an outermost diameter of a surface of a lowermost part of the electrode,
a lowermost layer among layers forming the electrode is a mirror electrode, and the mirror electrode reflects light incident from a rear surface of the substrate,
a plating power feeding layer, a first plating layer, and a second plating layer are formed above the mirror electrode in this order as layers forming the electrode,
the first plating layer is formed using Ni as a plating material,
the second plating layer is formed using Au as a plating material, and
the second plating layer is an uppermost layer of the electrode.

6. A method for manufacturing a rear surface incident type light receiving device including a substrate, a light receiving unit formed on a surface of the substrate and an electrode formed on the light receiving unit and electrically connected to the light receiving unit, wherein an outermost diameter of a surface of an uppermost part of the electrode is larger than an outermost diameter of a surface of a lowermost part of the electrode, a lowermost layer among layers forming the electrode is a mirror electrode, and the mirror electrode reflects light incident from a rear surface of the substrate, a plating power feeding layer, a first plating layer, and a second plating layer are formed above the mirror electrode in this order as layers forming the electrode, the first plating layer and the second plating layer are each formed using Au as a plating material, and the second plating layer is an uppermost layer of the electrode comprising:
a step of forming a first resist on the plating power feeding layer, the first resist having an opening at a location where the first plating layer is formed;
a step of forming the first plating layer by an electrolytic plating method using the plating power feeding layer as an electrode:
a step of forming a second resist on the first resist, the second resist having an opening at a location where the second plating layer is formed; and
a step of forming the second plating layer by an electrolytic plating method using the plating power feeding layer as an electrode.

7. A method for manufacturing a rear surface incident type light receiving device including a substrate, a light receiving unit formed on a surface of the substrate and an electrode formed on the light receiving unit and electrically connected to the light receiving unit, wherein an outermost diameter of a surface of an uppermost part of the electrode is larger than an outermost diameter of a surface of a lowermost part of the electrode, a lowermost layer among layers forming the electrode is a mirror electrode, and the mirror electrode reflects light incident from a rear surface of the substrate, a plating power feeding layer, a first plating layer, and a second plating layer are formed above the mirror electrode in this order as layers forming the electrode, the first plating layer and the second plating layer are each formed using Au as a plating material, and the second plating layer is an uppermost layer of the electrode comprising:
a step of forming a first resist on the plating power feeding layer, the first resist having an opening at a location where the first plating layer is formed;
a step of forming a second resist on the first resist, the second resist having an opening at a location where the second plating layer is formed; and
a step of forming the first plating layer and the second plating layer by an electrolytic plating method using the plating power feeding layer as an electrode.

Assignees

• Mitsubishi Electric Corp

Inventors

• Nakajima Yasuo

Classifications

• H10P74/207

  Electrical properties, e.g. testing or measuring of resistance, deep levels or capacitance-voltage characteristics · CPC title

• H10P74/23

  characterised by multiple measurements, corrections, marking or sorting processes · CPC title

• H10F77/206

  for devices having potential barriers · CPC title

• H10F30/2255

  in which the active layers form heterostructures, e.g. SAM structures · CPC title

• C25D3/48

  of gold · CPC title