Method of manufacturing a semiconductor device

Patent metadata

Field	Value
Publication number	US-10741409-B2
Application number	US-201715722413-A
Country	US
Kind code	B2
Filing date	Oct 2, 2017
Priority date	Nov 4, 2016
Publication date	Aug 11, 2020
Grant date	Aug 11, 2020

Abstract

A method of manufacturing a semiconductor device includes preparing an object layer on a substrate; polishing the object layer with a first slurry including a first abrasive having a zeta potential of a first polarity; rinsing a surface of the object layer, using a rinsing solution including a chemical of a second polarity, opposite to the first polarity; and polishing the object layer with a second slurry including a second abrasive having a zeta potential of a second polarity, opposite to the first polarity.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, comprising:
polishing an object layer of a substrate with a first slurry, the first slurry including a first abrasive having a zeta potential of a first polarity;
rinsing a surface of the object layer using a rinsing solution, the rinsing solution including a chemical having a zeta potential of a second polarity, opposite to the first polarity; and
polishing the object layer with a second slurry, the second slurry including a second abrasive having a zeta potential of the second polarity.

2. The method of claim 1 , wherein, in the polishing the object layer with the first slurry, the first abrasive having a zeta potential of the first polarity is a ceramic particle having a zeta potential of a positive polarity, and the second abrasive having a zeta potential of the second polarity is a ceramic particle having a zeta potential of a negative polarity.

3. The method of claim 2 , wherein the chemical of the second polarity includes at least one of a chemical having an acrylic acid group, a chemical having a sulfonic acid group, and a chemical having a phosphate group.

4. The method of claim 2 , wherein the chemical of the second polarity includes at least one of polyacrylic acid, polysulfonic acid, polyalkyl phosphate.

5. The method of claim 1 , wherein, in the polishing the object layer with the first slurry, the first abrasive having a zeta potential of the first polarity has a zeta potential of a polarity opposite to a polarity of the object layer.

6. The method of claim 1 , wherein, in the polishing the object layer with the first slurry, the first abrasive having a zeta potential of the first polarity is a ceramic particle having a zeta potential of a negative polarity, the second abrasive having a zeta potential of the second polarity is a ceramic particle having a zeta potential of a positive polarity, and the chemical of the second polarity includes a cationic polymer.

7. The method of claim 1 , wherein the polishing the object layer with the first slurry, a same platen performs the rinsing the surface of the object layer and the polishing the object layer with the second slurry.

8. The method of claim 1 , wherein a first platen performs the polishing the object layer with the first slurry, and a second platen performs the polishing the object layer with the second slurry.

9. The method of claim 8 , wherein the first platen performs the rinsing the surface of the object layer after the first platen performs polishing the object layer with the first slurry.

10. The method of claim 8 , wherein the second platen performs the rinsing the surface of the object layer before the second platen performs the polishing the object layer with the second slurry.

11. The method of claim 8 , wherein a platen different from the first platen and the second platen performs the rinsing the surface of the object layer between the polishing the object layer with the first slurry and the polishing the object layer with the second slurry.

12. The method of claim 1 , wherein the rinsing the surface of the object layer using the rinsing solution includes,
supplying the rinsing solution having the zeta potential opposite that of the first abrasive onto the surface of the substrate.

13. A method of manufacturing a semiconductor device, comprising:
polishing an object layer of a substrate with a first slurry, the first slurry including ceria, the first slurry having a negative zeta potential;
supplying a rinsing solution to a surface of the object layer, the rinsing solution including a cationic polymer, the rinsing solution supplied to the object layer having a positive zeta potential; and
polishing the object layer with a second slurry, the second slurry including silica, the second slurry having a positive zeta potential.

14. The method of claim 13 , wherein,
the polishing the object layer with the first slurry includes polishing the object layer on a first platen,
the supplying the rinsing solution includes supplying the rinsing solution on the first platen, and
the polishing the object layer with the second slurry includes polishing the object layer on a second platen.

15. The method of claim 13 , wherein,
the polishing the object layer with the first slurry includes polishing the object layer on a first platen,
the supplying the rinsing solution includes supplying the rinsing solution on a second platen, and
the polishing the object layer with the second slurry includes polishing the object layer on the second platen.

16. A method of manufacturing a semiconductor device, comprising:
polishing an object layer of a substrate with a first slurry, the first slurry including silica, the first slurry having a positive zeta potential;
supplying a rinsing solution to a surface of the object layer, the rinsing solution including an anionic polymer, the rinsing solution supplied to the object layer having a negative zeta potential; and
polishing the object layer with a second slurry, the second slurry including a ceria, the second slurry having a negative zeta potential.

17. The method of claim 16 , wherein,
the polishing the object layer with the first slurry includes polishing the object layer on a first platen,
the supplying the rinsing solution includes supplying the rinsing solution on the first platen, and
the polishing the object layer with the second slurry includes polishing the object layer on a second platen.

18. The method of claim 16 , wherein,
the polishing the object layer with the first slurry includes polishing the object layer on a first platen,
the supplying the rinsing solution includes supplying the rinsing solution on a second platen, and
the polishing the object layer with the second slurry includes polishing the object layer on the second platen.

19. The method of claim 16 , wherein,
the polishing the object layer with the first slurry includes polishing the object layer on a first platen,
the supplying the rinsing solution includes supplying the rinsing solution on a second platen, and
the polishing the object layer with the second slurry includes polishing the object layer on a third platen.

20. The method of claim 16 , wherein a pH of the second slurry is between 2 and 6.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Hyo Jung
• Kim Ye Hwan
• Jang Ki Hoon
• Kwon Byoung Ho
• Yoon Bo Un

Classifications

• H10P95/062

  involving a dielectric removal step · CPC title

• H10P70/277

  the processing being a planarisation of conductive layers · CPC title

• H10P70/237 Primary

  the processing being a planarisation of insulating layers · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title

• H10W10/17

  formed using trench refilling with dielectric materials, e.g. shallow trench isolations · CPC title