Chemical mechanical polishing (CMP) composition comprising inorganic particles and polymer particles

Patent metadata

Field	Value
Publication number	US-9255214-B2
Application number	US-201013503753-A
Country	US
Kind code	B2
Filing date	Nov 10, 2010
Priority date	Nov 13, 2009
Publication date	Feb 9, 2016
Grant date	Feb 9, 2016

Abstract

A chemical mechanical polishing (CMP) composition, comprising (A) at least one type of inorganic particles which are dispersed in the liquid medium (C), (B) at least one type of polymer particles which are dispersed in the liquid medium (C), (C) a liquid medium, wherein the zeta-potential of the inorganic particles (A) in the liquid medium (C) and the zeta-potential of the polymer particles in the liquid medium (C) are of same signs.

First claim

The invention claimed is:

1. A chemical mechanical polishing (CMP) composition, comprising:
(A) inorganic particles, dispersed in a liquid medium (C), and
(B) polymer particles, dispersed in the liquid medium (C),
wherein a zeta-potential of the inorganic particles (A) in the liquid medium (C) and a zeta-potential of the polymer particles (B) in the liquid medium (C) are positive, and
the polymer particles (B) comprise a dialkylamino group, an imidazole group, or a combination thereof.

2. The CMP composition of claim 1 , wherein a concentration of the polymer particles (B) is not more than 0.4% by weight of the CMP composition.

3. The CMP composition of claim 1 , wherein a concentration of the polymer particles (B) is not more than 0.2% by weight of the CMP composition.

4. The CMP composition of claim 1 , wherein a concentration of inorganic particles (A) is not more than 1% by weight of the CMP composition.

5. The CMP composition of claim 1 , wherein a concentration of inorganic particles (A) is not more than 0.6% by weight of the CMP composition.

6. The CMP composition of claim 1 , wherein a ratio of a mean particle size of the inorganic particles (A) to a mean particle size of the polymer particles (B) is from 0.1 to 5.0.

7. The CMP composition of claim 1 , wherein a weight ratio of polymer particles (B) to inorganic particles (A) is from 0.001 to 0.2.

8. The CMP composition of claim 1 , wherein the inorganic particles (A) are alumina, ceria, silica, titania, or zirconia, or a mixture thereof.

9. The CMP composition of claim 1 , wherein the inorganic particles (A) are ceria.

10. The CMP composition of claim 1 , wherein a pH of the composition is from 4 to 6.

11. The CMP composition of claim 1 , comprising:
(A) ceria particles,
(B) polymer particles comprising a dialkylamino group, an imidazole group, or a combination thereof, and
(C) water,
wherein a ratio of a mean particle size of (A) to a mean particle size of (B) is from 0.1 to 5.0,
a weight ratio of (B) to (A) is from 0.001 to 0.2, and
a pH of the composition is from 2.5 to 7.5.

12. A process for preparing a CMP composition, comprising:
dispersing inorganic particles (A) and polymer particles (B) in a liquid medium (C),
wherein a zeta-potential of the inorganic particles (A) in the liquid medium (C) and a zeta-potential of the polymer particles (B) in the liquid medium (C) are positive, and
the polymer particles (B) comprise a dialkylamino group, an imidazole group, or a combination thereof.

13. A process for manufacturing a semiconductor device, comprising:
polishing, in a chemical mechanical polishing, a surface of a dielectric substrate in the presence of the CMP composition of claim 1 .

14. The process of claim 13 , wherein the substrate is a shallow trench isolation (STI) device.

15. The CMP composition of claim 1 , wherein the CMP composition comprises only one type of inorganic particles (A).

16. The CMP composition of claim 1 , wherein the CMP composition comprises only one type of polymer particles (B).

17. The CMP composition of claim 1 , wherein a particle size distribution of inorganic particles (A), a particle size distribution of polymer particles (B), or both, is monomodal.

18. The CMP composition of claim 1 , wherein a mean particle size of inorganic particles (A) is from 10 to 500 nm.

19. The CMP composition of claim 1 , wherein a mean particle size of polymer particles (B) is from 10 to 500 nm.

Assignees

• Lauter Michael
• Raman Vijay Immanuel
• Li Yuzhuo
• Venkataraman Shyam Sundar
• Shen Daniel Kwo-Hung
• Basf Se

Inventors

• Lauter Michael
• Raman Vijay Immanuel
• Li Yuzhuo
• Venkataraman Shyam Sundar
• Shen Daniel Kwo-Hung

Classifications

• H10P95/062

  involving a dielectric removal step · CPC title

• C09K3/1409

  Abrasive particles per se (preparation of diamond C01B32/25) · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• C09K3/1463

  Aqueous liquid suspensions · CPC title

• C09K3/14

  Anti-slip materials; Abrasives {(products specifically intended for the fabrication of abrasive tools, blocks or papers, or for operations of the kind of sand-blasting and barrelling B24B31/14, B24C1/00; polishing compositions containing abrasive or grinding agents C09G1/02; friction compositions for brakes or clutches F16D69/02; polishing of semi-conductors H10P52/40)} · CPC title