Method for producing a homogeneous light distribution
US-9914265-B2 · Mar 13, 2018 · US
US10730780B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10730780-B2 |
| Application number | US-201616061929-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 16, 2016 |
| Priority date | Dec 18, 2015 |
| Publication date | Aug 4, 2020 |
| Grant date | Aug 4, 2020 |
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One aspect relates to a process for the preparation of a quartz glass body, including providing a silicon dioxide granulate, wherein the silicon dioxide granulate was made from pyrogenic silicon dioxide powder and the silicon dioxide granulate has a BET surface area in a range from 20 to 40 m2/g, making a glass melt out of silicon dioxide granulate in an oven and making a quartz glass body out of at least part of the glass melt. The oven has at least a first and a further chamber connected to one another via a passage. The temperature in the first chamber is lower than the temperature in the further chambers. One aspect relates to a quartz glass body which is obtainable by this process. One aspect relates to a light guide, an illuminant and a formed body, which are each obtainable by further processing of the quartz glass body.
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The invention claimed is: 1. A process for the preparation of a quartz glass body comprising: providing a silicon dioxide granulate, wherein the silicon dioxide granulate was made from pyrogenic silicon dioxide powder and the silicon dioxide granulate comprises: A BET surface area in a range from 20 to 40 m 2 /g; making a glass melt out of the silicon dioxide granulate in an oven; and making a quartz glass body out of at least part of the glass melt; wherein the oven has at least a first and a further chamber connected to one another by a passage, wherein the first and further chambers are at different temperatures; wherein the temperature in the first chamber is lower than the temperature in the further chamber; and wherein in the first chamber there is a pressure of less than 500 mbar. 2. The process according to claim 1 , wherein there is an additive in the first chamber selected from the group consisting of halogens, inert gas, base, oxygen or a combination of two or more of them. 3. The process according to claim 2 , wherein the halogen is selected from the group consisting of chlorine, fluorine, compounds containing chlorine, compounds containing fluorine and a combination of two or more thereof, and wherein the inert gas is selected from the group consisting of nitrogen, helium and a combination of the two. 4. The process according to claim 1 , wherein the silicon dioxide granulate comprises at least one of: a mean particle size in a range from 50 to 500 μm a bulk density in a range from 0.5 to 1.2 g/cm 3 ; a carbon content of less than 10 ppm; an aluminium content of less than 200 ppb; a tamped density in a range from 0.7 to 1.2 g/cm 3 ; a pore volume in a range from 0.1 to 2.5 mL/g; an angle of repose in a range from 23 to 26° a particle size distribution D 10 in a range from 50 to 150 μm; a particle size distribution D 50 in a range from 150 to 300 μm; and a particle size distribution D 90 in a range from 250 to 620 μm; wherein the ppm and ppb are each based on the total weight of the silicon dioxide powder. 5. The process according to claim 1 , wherein the silicon dioxide is transported from the first to the further chamber as granulate. 6. The process according to claim 1 , wherein the first chamber comprises at least one element selected from the group consisting of quartz glass, a refractory metal, aluminium and a combination of two or more of them. 7. The process according to claim 1 , wherein the further chamber is a crucible of a metal sheet or a sinter material containing a sinter metal, wherein the metal sheet or the sinter metal is selected from the group consisting of molybdenum, tungsten and a combination of them. 8. The process according to claim 1 , wherein the BET surface area before making a glass melt out of the silicon dioxide granulate in an oven is not reduced to less than 5 m 2 /g. 9. The process according to claim 1 , wherein melt energy is transmitted to the silicon dioxide granulate via a solid surface. 10. The process according to claim 1 , wherein hydrogen, helium, nitrogen or a combination of two or more of them is present in the gas space of the oven. 11. The process according to claim 1 , wherein providing the silicon dioxide granulate comprises: providing silicon dioxide powder comprising: a BET surface area in a range from 20 to 60 m 2 /g; and a bulk density in a range from 0.01 to 0.3 g/cm 3 ; processing the silicon dioxide powder to obtain a silicon dioxide granulate; wherein the silicon dioxide granulate has a larger particle size than the silicon dioxide powder. 12. The process according to claim 11 , wherein the provided silicon dioxide powder comprises at least one of: a carbon content of less than 50 ppm a chlorine content of less than 200 ppm; an aluminium content of less than 200 ppb; a total content of metals which are different from aluminium of less than 5 ppm; at least 70 wt.-% of the powder particles have a primary particle size in a range from 10 to 100 nm; a tamped density in a range from 0.001 to 1.3 g/cm 3 ; a residual moisture content of less than 5 wt.-%; a particle size distribution D 10 in the range from 1 to 7 μm; a particle size distribution D 50 in the range from 6 to 15 μm; and a particle size distribution D 90 in the range from 10 to 40 μm; wherein the wt.-%, the ppm and the ppb are each based on the total weight of the silicon dioxide powder. 13. The process according to claim 1 , wherein the silicon dioxide powder is made from an element selected from the group consisting of siloxanes, silicon alkoxides and silicon halides. 14. The process according to claim 1 , further comprising forming a hollow body with at least one opening from the quartz glass body.
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